ABSTRACT
Silicon solar cells are approaching their theoretical efficiency limit of 29%. This limitation can be exceeded with advanced device architectures, where two or more solar cells are stacked to improve the harvesting of solar energy. In this work, we devise a tandem device with a perovskite layer conformally coated on a silicon bottom cell featuring micrometric pyramids-the industry standard-to improve its photocurrent. Using an additive in the processing sequence, we regulate the perovskite crystallization process and alleviate recombination losses occurring at the perovskite top surface interfacing the electron-selective contact [buckminsterfullerene (C60)]. We demonstrate a device with an active area of 1.17 square centimeters, reaching a certified power conversion efficiency of 31.25%.
ABSTRACT
The intricate features of many-body interactions and spin-orbit coupling play a significant role in numerous physical phenomena. Particularly in two-dimensional transition metal dichalcogenides (2D-TMDs), excitonic dynamics are a key phenomenon that promises opportunities for diverse range of device applications. Here, we report the direct observation of a visible-range three-dimensional resonant exciton and its associated charged exciton in monolayer tungsten diselenide, as compared to monolayer molybdenum disulfide. A comprehensive experimental study that includes high-resolution TEM, Raman, high-resolution spectroscopic ellipsometry over a wide temperature range down to 4 K, high-energy temperature, and excitation power-dependent photoluminescence spectroscopy has been conducted. It is supported by first-principles calculations to unravel the influence of spin-orbit coupling in the formation of the resonant exciton and to identify its in-plane and out-of-plane features. Furthermore, we study the impact of temperature and thickness on the spin-orbit coupling strength in 2D-TMDs. This work is crucial in creating a platform in the fundamental understanding of high-energy resonant exciton in layered two-dimensional systems and that such high-energy optoelectronic features make them an increasingly attractive candidate for novel electronic and optoelectronic applications particularly in the aspects of solar cells and light-emitting diodes via the manipulation of excitonic states.
ABSTRACT
The exciton, a quasi-particle that creates a bound state of an electron and a hole, is typically found in semiconductors. It has attracted major attention in the context of both fundamental science and practical applications. Transition metal dichalcogenides (TMDs) are a new class of 2D materials that include direct band-gap semiconductors with strong spin-orbit coupling and many-body interactions. Manipulating new excitons in semiconducting TMDs could generate a novel means of application in nanodevices. Here, the observation of high-energy excitonic peaks in the monolayer-MoS2 on a SrTiO3 heterointerface generated by a new complex mechanism is reported, based on a comprehensive study that comprises temperature-dependent optical spectroscopies and first-principles calculations. The appearance of these excitons is attributed to the change in many-body interactions that occurs alongside the interfacial orbital hybridization and spin-orbit coupling brought about by the excitonic effect propagated from the substrate. This has further led to the formation of a Fermi-surface feature at the interface. The results provide an atomic-scale understanding of the heterointerface between monolayer-TMDs and perovskite oxide and highlight the importance of spin-orbit-charge-lattice coupling on the intrinsic properties of atomic-layer heterostructures, which open up a way to manipulate the excitonic effects in monolayer TMDs via an interfacial system.
ABSTRACT
We report the self-assembly of an extensive inter-ligand hydrogen-bonding network of octylphosphonates on the surface of cesium lead bromide nanocrystals (CsPbBr3 NCs). The post-synthetic addition of octylphosphonic acid to oleic acid/oleylamine-capped CsPbBr3 NCs promoted the attachment of octylphosphonate to the NC surface, while the remaining oleylammonium ligands maintained the high dispersability of the NCs in non-polar solvent. Through powerful 2D solid-state 31P-1H NMR, we demonstrated that an ethyl acetate/acetonitrile purification regime was crucial for initiating the self-assembly of extensive octylphosphonate chains. Octylphosphonate ligands were found to preferentially bind in a monodentate mode through P-O-, leaving polar P[double bond, length as m-dash]O and P-OH groups free to form inter-ligand hydrogen bonds. The octylphosphonate ligand network strongly passivated the nanocrystal surface, yielding a fully-purified CsPbBr3 NC ink with PLQY of 62%, over 3 times higher than untreated NCs. We translated this to LED devices, achieving maximum external quantum efficiency and luminance of 7.74% and 1022 cd m-2 with OPA treatment, as opposed to 3.59% and 229 cd m-2 for untreated CsPbBr3 NCs. This represents one of the highest efficiency LEDs obtained for all-inorganic CsPbBr3 NCs, accomplished through simple, effective passivation and purification processes. The robust binding of octylphosphonates to the perovskite lattice, and specifically their ability to interlink through hydrogen bonding, offers a promising passivation approach which could potentially be beneficial across a breadth of halide perovskite optoelectronic applications.
ABSTRACT
Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs.
ABSTRACT
Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light-emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices, whereas high-frequency modulation enables electroluminescence emission up to room temperature.
ABSTRACT
High photoluminescence quantum yields and narrow emission wavelengths, combined with low temperature solution processing, make CH3NH3PbBr3 nanocrystals (NCs) favorable candidates for light-emitting applications. Herein, we describe the synthesis of CH3NH3PbBr3 NC inks by a convenient room-temperature ligand assisted reprecipitation protocol. We further investigate the effect of modulation of the CH3NH3Br : PbBr2 ratio during NC synthesis on the optical properties, crystallinity, particle size distribution and film formation of the NC ink. Subsequently, we fabricate LEDs using these NCs as the emissive layer and the highest efficiency (1.75% external quantum efficiency) and brightness (>2700 cd m-2) is achieved for the 1.15 : 1 precursor ratio. It is inferred that the NC surface properties and film coverage are more crucial than the photoluminescence intensity to achieve high device efficiency. Moreover, by separating the NC synthesis and thin film formation processes, we can exert more control during device fabrication, which makes it very promising for scale-up applications.
ABSTRACT
Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS2 was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers.Two-dimensional materials have recently emerged as interesting materials for optoelectronic applications. Here, Shang et al. demonstrate two-dimensional semiconductor activated vertical-cavity surface-emitting lasers where both the gain material and the lasing characteristics are two-dimensional.
ABSTRACT
Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.
ABSTRACT
We implemented spatial mapping of charge carrier density in the channel of a conventional polymer Field-Effect Transistor (FET) by mid-infrared Charge Modulation Spectroscopy (CMS). CMS spectra are recorded with a high sensitivity confocal Fourier Transform Infra-Red (FTIR) microscope by probing electroinduced Infra-Red Active Vibrational (IRAV) modes and low-energy polaron bands in the spectral region 680-4000 cm(-1). Thanks to the high specificity and strong oscillator strength of these modes, charge-induced reflectance measurements allow quantitative estimation of charge carrier densities within the FET channel, without the need for amplitude or phase modulation. This is illustrated by identifying the contribution of intrinsic and electrostatically induced polarons to conduction, and by mapping the polaron spatial distribution in a P3HT (Poly(3-hexylthiophene-2,5-diyl)) FET channel under different drain-source bias conditions. This work demonstrates the potential of mid-infrared charge modulation microscopy to characterize carrier injection and transport in semiconducting polymer materials.
