Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO3 Based Two-Dimensional Electron Gas.

Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.

Effect of Confinement and Coulomb Interactions on the Electronic Structure of the (111) LaAlO3/SrTiO3 Interface.

A tight binding supercell approach is used for the calculation of the electronic structure of the (111) LaAlO3/SrTiO3 interface. The confinement potential at the interface is evaluated solving a discrete Poisson equation by means of an iterative method. In addition to the effect of the confinement, local Hubbard electron-electron terms are included at the mean-field level within a fully self-consistent procedure. The calculation carefully describes how the two-dimensional electron gas arises from the quantum confinement of electrons near the interface due to the band bending potential. The resulting electronic sub-bands and Fermi surfaces show full agreement with the electronic structure determined by angle-resolved photoelectron spectroscopy experiments. In particular, we analyse how the effect of local Hubbard interactions change the density distribution over the layers from the interface to the bulk. Interestingly, the two-dimensional electron gas at the interface is not depleted by local Hubbard interactions which indeed induce an enhancement of the electron density between the first layers and the bulk.

Tunable Spin and Orbital Edelstein Effect at (111) LaAlO3/SrTiO3 Interface.

Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely, the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field, giving rise to the so-called orbital Edelstein effect. Oxide heterostructures are the ideal platform for these effects due to the strong spin-orbit coupling and the lack of inversion symmetries. Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO3/SrTiO3 interface for very low and high fillings. We model the material as a bilayer of t2g orbitals using a tight-binding approach, whereas transport properties are obtained in the Boltzmann approach. We give an effective model at low filling, which explains the non-trivial behaviour of the Edelstein response, showing that the hybridization between the electronic bands crucially impacts the Edelstein susceptibility.

A Josephson phase battery.

A classical battery converts chemical energy into a persistent voltage bias that can power electronic circuits. Similarly, a phase battery is a quantum device that provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on phase coherence. Here we demonstrate a phase battery in a hybrid superconducting circuit. It consists of an n-doped InAs nanowire with unpaired-spin surface states, that is proximitized by Al superconducting leads. We find that the ferromagnetic polarization of the unpaired-spin states is efficiently converted into a persistent phase bias φ0 across the wire, leading to the anomalous Josephson effect1,2. We apply an external in-plane magnetic field and, thereby, achieve continuous tuning of φ0. Hence, we can charge and discharge the quantum phase battery. The observed symmetries of the anomalous Josephson effect in the vectorial magnetic field are in agreement with our theoretical model. Our results demonstrate how the combined action of spin-orbit coupling and exchange interaction induces a strong coupling between charge, spin and superconducting phase, able to break the phase rigidity of the system.

Unveiling Signatures of Topological Phases in Open Kitaev Chains and Ladders.

In this work, the general problem of the characterization of the topological phase of an open quantum system is addressed. In particular, we study the topological properties of Kitaev chains and ladders under the perturbing effect of a current flux injected into the system using an external normal lead and derived from it via a superconducting electrode. After discussing the topological phase diagram of the isolated systems, using a scattering technique within the Bogoliubov-de Gennes formulation, we analyze the differential conductance properties of these topological devices as a function of all relevant model parameters. The relevant problem of implementing local spectroscopic measurements to characterize topological systems is also addressed by studying the system electrical response as a function of the position and the distance of the normal electrode (tip). The results show how the signatures of topological order affect the electrical response of the analyzed systems, a subset of which being robust also against the effects of a moderate amount of disorder. The analysis of the internal modes of the nanodevices demonstrates that topological protection can be lost when quantum states of an initially isolated topological system are hybridized with those of the external reservoirs. The conclusions of this work could be useful in understanding the topological phases of nanowire-based mesoscopic devices.

Localization, Topology, and Quantized Transport in Disordered Floquet Systems.

We investigate the effects of disorder on a periodically driven one-dimensional model displaying quantized topological transport. We show that, while instantaneous eigenstates are necessarily Anderson localized, the periodic driving plays a fundamental role in delocalizing Floquet states over the whole system, henceforth allowing for a steady-state nearly quantized current. Remarkably, this is linked to a localization-delocalization transition in the Floquet states at strong disorder, which occurs for periodic driving corresponding to a nontrivial loop in the parameter space. As a consequence, the Floquet spectrum becomes continuous in the delocalized phase, in contrast with a pure-point instantaneous spectrum.

A zero-dimensional topologically nontrivial state in a superconducting quantum dot.

The classification of topological states of matter in terms of unitary symmetries and dimensionality predicts the existence of nontrivial topological states even in zero-dimensional systems, i.e., systems with a discrete energy spectrum. Here, we show that a quantum dot coupled with two superconducting leads can realize a nontrivial zero-dimensional topological superconductor with broken time-reversal symmetry, which corresponds to the finite size limit of the one-dimensional topological superconductor. Topological phase transitions corresponds to a change of the fermion parity, and to the presence of zero-energy modes and discontinuities in the current-phase relation at zero temperature. These fermion parity transitions therefore can be revealed by the current discontinuities or by a measure of the critical current at low temperatures.

Nonadiabatic Breaking of Topological Pumping.

We study Thouless pumping out of the adiabatic limit. Our findings show that despite its topological nature, this phenomenon is not generically robust to nonadiabatic effects. Indeed, we find that the Floquet diagonal ensemble value of the pumped charge shows a deviation from the topologically quantized limit which is quadratic in the driving frequency for a sudden switch on of the driving. This is reflected also in the charge pumped in a single period, which shows a nonanalytic behavior on top of an overall quadratic decrease. Exponentially small corrections are recovered only with a careful tailoring of the driving protocol. We also discuss thermal effects and the experimental feasibility of observing such a deviation.

Probing the Bond Order Wave Phase Transitions of the Ionic Hubbard Model by Superlattice Modulation Spectroscopy.

An exotic phase, the bond order wave, characterized by the spontaneous dimerization of the hopping, has been predicted to exist sandwiched between the band and Mott insulators in systems described by the ionic Hubbard model. Despite growing theoretical evidence, this phase still evades experimental detection. Given the recent realization of the ionic Hubbard model in ultracold atomic gases, we propose here to detect the bond order wave using superlattice modulation spectroscopy. We demonstrate, with the help of time-dependent density-matrix renormalization group and bosonization, that this spectroscopic approach reveals characteristics of both the Ising and Kosterlitz-Thouless transitions signaling the presence of the bond order wave phase. This scheme also provides insights into the excitation spectra of both the band and Mott insulators.

Resonant Andreev Spectroscopy in normal-Metal/thin-Ferromagnet/Superconductor Device: Theory and Application.

We develop a theoretical model to describe the transport properties of normal-metal/thin-ferromagnet/superconductor device. We perform experimental test of the model using a gold tip on PdNi/Nb bilayer. The resonant proximity effect causes conductance features very sensitive to the local ferromagnetic properties, enabling accurate measurement of polarization and thickness of the ferromagnet by point contact spectroscopy.

Correlation dynamics during a slow interaction quench in a one-dimensional Bose gas.

We investigate the response of a one-dimensional Bose gas to a slow increase of its interaction strength. We focus on the rich dynamics of equal-time single-particle correlations treating the Lieb-Liniger model within a bosonization approach and the Bose-Hubbard model using the time-dependent density-matrix renormalization group method. For short distances, correlations follow a power law with distance with an exponent given by the adiabatic approximation. In contrast, for long distances, correlations decay algebraically with an exponent understood within the sudden quench approximation. This long distance regime is separated from an intermediate distance one by a generalized Lieb-Robinson criterion. At long times, in this intermediate regime, bosonization predicts that single-particle correlations decay following a stretched exponential, an unconventional behavior. We develop here an intuitive understanding for the propagation of correlations, in terms of a generalized light cone, applicable to a large variety of systems and quench forms.

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors.

We discuss the origin of an additional dip other than the charge neutrality point observed in the transfer characteristics of graphene-based field-effect transistors with a Si/SiO2 substrate used as the back-gate. The double dip is proved to arise from charge transfer between the graphene and the metal electrodes, while charge storage at the graphene/SiO2 interface can make it more evident. Considering a different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all the features observed in the gate voltage loops. We finally show that the double dip enhanced hysteresis in the transfer characteristics can be exploited to realize graphene-based memory devices.