Nanocone-Shaped Carbon Nanotubes Field-Emitter Array Fabricated by Laser Ablation.

The nanocone-shaped carbon nanotubes field-emitter array (NCNA) is a near-ideal field-emitter array that combines the advantages of geometry and material. In contrast to previous methods of field-emitter array, laser ablation is a low-cost and clean method that does not require any photolithography or wet chemistry. However, nanocone shapes are hard to achieve through laser ablation due to the micrometer-scale focusing spot. Here, we develop an ultraviolet (UV) laser beam patterning technique that is capable of reliably realizing NCNA with a cone-tip radius of ≈300 nm, utilizing optimized beam focusing and unique carbon nanotube-light interaction properties. The patterned array provided smaller turn-on fields (reduced from 2.6 to 1.6 V/µm) in emitters and supported a higher (increased from 10 to 140 mA/cm2) and more stable emission than their unpatterned counterparts. The present technique may be widely applied in the fabrication of high-performance CNTs field-emitter arrays.

A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing.

The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 [Formula: see text]C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 [Formula: see text]C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.

Optical-Field-Driven Electron Tunneling in Metal-Insulator-Metal Nanojunction.

Optical-field driven electron tunneling in nanojunctions has made demonstrable progress toward the development of ultrafast charge transport devices at subfemtosecond time scales, and have evidenced great potential as a springboard technology for the next generation of on-chip "lightwave electronics." Here, the empirical findings on photocurrent the high nonlinearity in metal-insulator-metal (MIM) nanojunctions driven by ultrafast optical pulses in the strong optical-field regime are reported. In the present MIM device, a 14th power-law scaling is identified, never achieved before in any known solid-state device. This work lays important technological foundations for the development of a new generation of ultracompact and ultrafast electronics devices that operate with suboptical-cycle response times.

Ultrafast Electron Tunneling Devices-From Electric-Field Driven to Optical-Field Driven.

The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new "lightwave electronics" emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.

Antenna-coupled vacuum channel nano-diode with high quantum efficiency.

Vacuum channel diodes have the potential to serve as a platform for converting free-space electromagnetic radiation into electronic signals within ultrafast timescales. However, the conversion efficiency is typically very low because conventional vacuum channel diode structures suffer from high surface barriers, especially when using lower energy photon excitation (near-infrared photons or lower). Here, we report on an optical antenna-coupled vacuum channel nano-diode, which demonstrates a greatly improved quantum efficiency up to ∼4% at 800 nm excitation; an efficiency several orders of magnitude higher than any previously reported value. The nano diodes are formed at the cleaved edge of a metal-insulator-semiconductor (MIS) structure, where a gold thin film with nanohole array serves as both the metal electrode and light-harvesting antenna. At the nanoholes-insulator interface, the tunneling barrier is greatly reduced due to the coulombic repulsion induced high local electron density, such that the resonant plasmon induced hot electron population can readily inject into the vacuum channel. The presented vertical tertiary MIS junction enables a new class of high-efficiency, polarization-specific and wavelength- sensitive optical modulated photodetector that has the potential for developing a new generation of opto-electronic systems.

Ultrafast Field-Emission Electron Sources Based on Nanomaterials.

The search for electron sources with simultaneous optimal spatial and temporal resolution has become an area of intense activity for a wide variety of applications in the emerging fields of lightwave electronics and attosecond science. Most recently, increasing efforts are focused on the investigation of ultrafast field-emission phenomena of nanomaterials, which not only are fascinating from a fundamental scientific point of view, but also are of interest for a range of potential applications. Here, the current state-of-the-art in ultrafast field-emission, particularly sub-optical-cycle field emission, based on various nanostructures (e.g., metallic nanotips, carbon nanotubes) is reviewed. A number of promising nanomaterials and possible future research directions are also established.

Carbon Nanotubes as an Ultrafast Emitter with a Narrow Energy Spread at Optical Frequency.

Ultrafast electron pulses, combined with laser-pump and electron-probe technologies, allow ultrafast dynamics to be characterized in materials. However, the pursuit of simultaneous ultimate spatial and temporal resolution of microscopy and spectroscopy is largely subdued by the low monochromaticity of the electron pulses and their poor phase synchronization to the optical excitation pulses. Field-driven photoemission from metal tips provides high light-phase synchronization, but suffers large electron energy spreads (3-100 eV) as driven by a long wavelength laser (>800 nm). Here, ultrafast electron emission from carbon nanotubes (≈1 nm radius) excited by a 410 nm femtosecond laser is realized in the field-driven regime. In addition, the emitted electrons have great monochromaticity with energy spread as low as 0.25 eV. This great performance benefits from the extraordinarily high field enhancement and great stability of carbon nanotubes, superior to metal tips. The new nanotube-based ultrafast electron source opens exciting prospects for extending current characterization to sub-femtosecond temporal resolution as well as sub-nanometer spatial resolution.