Nanometer size field effect transistors for terahertz detectors.

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.

Nanowire-based field effect transistors for terahertz detection and imaging systems.

The development of self-assembled nanostructure technologies has recently opened the way towards a wide class of semiconductor integrated devices, with progressively optimized performances and the potential for a widespread range of electronic and photonic applications. Here we report on the development of field effect transistors (FETs) based on semiconductor nanowires (NWs) as highly-sensitive room-temperature plasma-wave broadband terahertz (THz) detectors. The electromagnetic radiation at 0.3 THz is funneled onto a broadband bow-tie antenna, whose lobes are connected to the source and gate FET electrodes. The oscillating electric field experienced by the channel electrons, combined with the charge density modulation by the gate electrode, results in a source-drain signal rectification, which can be read as a DC signal output. We investigated the influence of Se-doping concentration of InAs NWs on the detection performances, reaching responsivity values higher than 100 V W⁻¹, with noise-equivalent-power of ∼10⁻9 W Hz(⁻½). Transmission imaging experiments at 0.3 THz show the good reliability and sensitivity of the devices in a real practical application.

Graphene field-effect transistors as room-temperature terahertz detectors.

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples.

Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using InAIAs/InGaAs/InP material systems at room temperature.

In this paper, we report on nonresonant detection of terahertz radiation using the rectification mechanism of two-dimensional plasmons in high-electron-mobility transistors using InAIAs/InGaAs/InP material systems. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. The measured response was dependent on the polarization of the incident THz wave; The device exhibited higher response when the electric-field vector of the incident radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity extracted from the measured response shows a clear beam focus centered on the transistor position, which ensures the appropriate coupling of the terahertz radiation to the device. The device also demonstrated excellent sensitivity/noise performances of approximately 125 V/W and approximately 10(-11) W/Hz(0.5) under 0.30 THz radiation.

Room temperature detection of sub-terahertz radiation in double-grating-gate transistors.

Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.

Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission.

The channel of a field effect transistor can act as a resonator for plasma waves propagating in a two-dimensional electron gas. The plasma frequency increases with reduction of the channel length and can reach the terahertz (THz) range for nanometer size transistors. Recent experimental results show these transistors can be potential candidates for a new class of THz detectors and emitters. This work gives an overview of our recent relevant experimental results. We also outline unresolved problems and questions concerning THz detection and emission by nanometer transistors.

Photon BLOCH oscillations in porous silicon optical superlattices.

We report the first observation of oscillations of the electromagnetic field in an optical superlattice based on porous silicon. These oscillations are an optical equivalent of well-known electronic Bloch oscillations in crystals. Elementary cells of our structure are composed by microcavities whose coupling gives rise to the extended collective modes forming optical minigaps and minibands. By varying thicknesses of the cavities along the structure axis, we have created an effective electric field for photons. A very high quality factor of the confined optical state of the Wannier-Stark ladder may allow lasing in porous silicon-based superlattices.

Equifrequency surfaces in a two-dimensional GaN-based photonic crystal.

We established the angular conditions that maintain the quasi-phase matching conditions for enhanced second-harmonic generation. To do that, we investigated the equifrequency surfaces of the resonant Bloch modes of a two-dimensional periodic, hole-array photonic crystal etched into a GaN/sapphire epitaxial structure. The equifrequency surfaces exhibit remarkable shapes, in contrast to the simpler surfaces of a one-dimensional structure. The observed anisotropy agrees well with the surfaces calculated by a scattering matrix method. The equifrequency surfaces at fundamental and second-harmonic frequencies provide the values of polar and azimuthal angles that maintain quasi-phase matching conditions for enhanced second-harmonic generation over an extended tuning range. The predicted values for quasi phase-matching conditions show that frequency tuning for the two-dimensional case covers an about two times larger fractional bandwidth relative to the one-dimensional case.

Activity and cross-reactivity of antibodies induced in mice by immunization with a group B meningococcal conjugate.

The capsular polysaccharide of group B Neisseria meningitidis is composed of a linear homopolymer of alpha(2-8) N-acetyl neuraminic acid or polysialic acid (PSA) that is also carried by isoforms of the mammalian neural cell adhesion molecule (NCAM), which is especially expressed on brain cells during development. Here we analyzed the ability of antibodies induced by the candidate vaccine N-propionyl polysaccharide tetanus toxoid conjugate to recognize PSA-NCAM. We hyperimmunized mice to produce a pool of antisera and a series of immunoglobulin G monoclonal antibodies and evaluated their self-reactivity profile by using a battery of tests (immunoprecipitation, immunoblotting, and immunofluorescence detection on live cells and human tissue sections) chosen for their sensitivity and specificity to detect PSA-NCAM in various environments. We also searched for the effects of the vaccine-induced antibodies in two functional assays involving cell lysis or cell migration. Although they were highly bactericidal, all the antibodies tested showed very low or no recognition of PSA-NCAM, in contrast to PSA-specific monoclonal antibodies used as controls. Different patterns of cross-reactions were revealed by the tests used, likely due to affinity and specificity differences among the populations of induced antibodies. Furthermore, neither cell lysis nor perturbation of migration was observed in the presence of the tested antibodies. Importantly, we showed that whereas enzymatic removal of PSA groups from the surfaces of live cells perturbed their migration, blocking them with PSA-specific antibodies was not functionally detrimental. Taken together, our data indicated that this candidate vaccine induced antibodies that could not demonstrate an immunopathologic effect.

Soluble forms of NCAM and F3 neuronal cell adhesion molecules promote Schwann cell migration: identification of protein tyrosine phosphatases zeta/beta as the putative F3 receptors on Schwann cells.

Neural cell adhesion molecule (NCAM) and F3 are both axonal adhesion molecules which display homophilic (NCAM) or heterophilic (NCAM, F3) binding activities and participate in bidirectional exchange of information between neurones and glial cells. Engineered Fc chimeric molecules are fusion proteins that contain the extracellular part of NCAM or F3 and the Fc region of human IgG1. Here, we investigated the effect of NCAM-Fc and F3-Fc chimeras on Schwann cell (SC) migration. Binding sites were identified at the surface of cultured SCs by chimera coated fluorospheres. The functional effect of NCAM-Fc and F3-Fc binding was studied in two different SC migration models. In the first, migration is monitored at specific time intervals inside a 1-mm gap produced in a monolayer culture of SCs. In the second, SCs from a dorsal root ganglion explant migrate on a sciatic nerve cryosection. In both systems addition of the chimeras significantly increased the extent of SC migration and this effect could be prevented by the corresponding anti-NCAM or anti-F3 blocking antibodies. Furthermore, antiproteoglycan-type protein tyrosine phosphatase zeta/beta (RPTPzeta/beta) antibodies identified the presence of RPTPzeta/beta on SCs and prevented the enhancing effect of soluble F3 on SC motility by 95%. The F3-Fc coated Sepharose beads precipitated RPTPzeta/beta from SC lysates. Altogether these data point to RPTPzeta/beta is the putative F3 receptor on SCs. These results identify F3 and NCAM receptors on SC as potential mediators of signalling occurring between axons and glial cells during peripheral nerve development and regeneration.