Maskless photolithography based on ultraviolet micro-LEDs and direct writing method for improving pattern resolution.

Ultraviolet micro-LEDs show great potential as a light source for maskless photolithography. However, there are few reports on micro-LED based maskless photolithography systems, and the studies on the effects of system parameters on exposure patterns are still lacking. Hence, we developed a maskless photolithography system that employs micro-LEDs with peak wavelength 375 nm to produce micrometer-sized exposure patterns in photoresists. We also systematically explored the effects of exposure time and current density of micro-LED on static direct writing patterns, as well as the effects of stage velocity and current pulse width on dynamic direct writing patterns. Furthermore, reducing the size of micro-LED pixels enables obtaining high-resolution exposure patterns, but this approach will bring technical challenges and high costs. Therefore, this paper proposes an oblique direct writing method that, instead of reducing the micro-LED pixel size, improves the pattern resolution by changing the tilt angle of the sample. The experimental results show that the linewidths of the exposed lines decreased by 4.0% and 15.2%, respectively, as the sample tilt angle increased from 0° to 15° and 30°, which confirms the feasibility of the proposed method to improve the pattern resolution. This method is also expected to correct the exposure pattern error caused by optical distortion of the lens in the photolithography system. The system and method reported can be applied in various fields such as PCBs, photovoltaics, solar cells, and MEMS.

Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED.

Temperature-dependent electroluminescence (TDEL) measurements have been employed to investigate the carrier transport and recombination processes of InGaN red micro-LED based on dual-wavelength InGaN/GaN MQWs structure. EL peak energy and carrier transport of the red micro-LED both show temperature dependence, due to temperature-induced changes in defect activation. In addition, the current density at which the blue peak of the low-In-content appears in the EL spectrum varies with temperature. As the temperature increases, the blue peak of the low In component tends to appear at higher current densities, which may be attributed to the increase in thermally activated defects hindering the injection of holes into the low-In-content MQWs further away from p-GaN. Furthermore, the IQEs of the high-In-content MQWs are estimated from the TDEL method and then reveal the temperature-dependent efficiency droop. The IQE decreases as temperature increases, particularly above 50 K, where it drops sharply due to temperature-dependent nonradiative recombination. And the two different variation trends in IQE of MQWs with high and low In content reveal a competitive mechanism in carrier distribution, implying that more escaping holes from high-In-content MQWs will further reduce red emission efficiency but enhance carrier injection and blue emission in low-In-content MQWs.

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging.

Sidewall defects play a key role in determining the efficiency of GaN-based micro-light emitting diodes (LEDs) for next generation display applications, but there still lacks direct observation of defects-related recombination at the affected area. In this Letter, we proposed a direct technique to investigate the recombination mechanism and size effect of sidewall defects for GaN blue micro-LEDs. The results show that mesa etching will produce stress release near the sidewall, which can reduce the quantum confinement Stark effect (QCSE) to improve the radiative recombination. Meanwhile, the defect-related non-radiative recombination generated by the sidewall defects plays a leading role under low-power injection. In addition, the effective area of the mesas affected by the sidewall defects can be directly observed according to the fluorescence lifetime imaging microscope (FLIM) characterization. For example, the effective area of the mesa with 80 µm is affected by 23% while the entire area of the mesa with 10 µm is almost all affected. This study provides guidance for the analysis and repair of sidewall defects to improve the quantum efficiency of micro-LEDs display at low current density.

InGaN micro-LED array with integrated emission and detection functions for color detection application.

InGaN-based micro-LEDs can detect and emit optical signals simultaneously, owing to their overlapping emission and absorption spectra, enabling color detection. In this paper, we fabricated a green InGaN-based micro-LED array with integrated emission and detection functions. On the back side of the integrated device, when the 80 µm micro-LED emitted light, the 200 µm LED could receive reflected light to accomplish color detection. The spacing between the 80 µm and the 200 µm micro-LEDs was optimized to be 1 mm to reduce the effect of the direct light transmitted through the n-GaN layer without reflection. The integrated device shows good detection performance for different colors and skin colors, even in a dark environment. In addition, light can be emitted from the top side of the device. Utilization of light from both sides of the integrated device provides the possibility of its application in display, communication, and detection on the different sides.

10-Gbps visible light communication in a 10-m free space based on violet series-biased micro-LED array and distance adaptive pre-equalization.

In this paper, we fabricated a 3×3 violet series-biased micro-LED array with high-output optical power and applied it in high-speed and long-distance visible light communication. By employing the orthogonal frequency division multiplexing modulation scheme, distance adaptive pre-equalization, and a bit-loading algorithm, record data rates of 10.23 Gbps, 10.10 Gbps, and 9.51 Gbps were achieved at 0.2 m, 1 m, and 10 m, respectively, below the forward error correction limit of 3.8×10-3. To the best of our knowledge, these are the highest data rates achieved by violet micro-LEDs in free space and the first communication demonstration beyond 9.5 Gbps at 10 m using micro-LEDs.

Improvements of the modulation bandwidth and data rate of green-emitting CsPbBr3 perovskite quantum dots for Gbps visible light communication.

CsPbBr3 perovskite quantum dots (PQDs) as promising color conversion materials have been widely used in display and visible light communication (VLC), but most CsPbBr3 PQDs for VLC are randomly selected without optimization. Thereby the exploration of fundamental experimental parameters of QDs is essential to better employ their performance advantages. Herein, we investigated the concentration and solvent effects on photoluminescence (PL) properties and communication performance of CsPbBr3 PQDs. The PL, time-resolved PL characterization and communication measurements of CsPbBr3 PQDs all exhibit concentration dependence, suggesting that there exists an optimum concentration to take advantages of performance merits. CsPbBr3 PQDs with a concentration of 0.5 mg/ml show the shortest carrier lifetime and achieve the highest -3 dB bandwidth (168.03 MHz) as well as the highest data rate (660 Mbps) comparing to other concentrations. And in terms of the optimal concentration, we further explored the approach to improve the communication performance, investigating the effect of polarity solvent on the communication performance of CsPbBr3 PQDs. Original 0.5 mg/ml CsPbBr3 PQDs (1 ml) with 55 µL ethanol added in obtain a higher -3 dB bandwidth of 363.68 MHz improved by ∼116.4% and a record data rate of 1.25 Gbps improved by ∼89.4% but weaker PL emission due to energy transfer. The energy transfer assisted improvement may open up a promising avenue to improve the communication performance of QDs, but more feasible energy transfer path needs to be explored to ensure the stability of QDs.

Vertical stack integration of blue and yellow InGaN micro-LED arrays for display and wavelength division multiplexing visible light communication applications.

In this work, we demonstrated a convenient and reliable method to realize the vertical stack integration of the blue and yellow InGaN micro-LED arrays. The standard white and color-tunable micro-light sources can be achieved by adjusting the current densities injection of the micro-LEDs. The spectra cover violet, standard white, cyan, etc., showing an excellent color-tunable property. And the mixed standard white light can be separated into red-green-blue three primary colors through the color filters to realize full-color micro-LED display with a color gamut of 75% NTSC. Besides, the communication capability of the integrated micro-LED arrays as visible light communication (VLC) transmitters is demonstrated with a maximum total data rate of 2.35 Gbps in the wavelength division multiplexing (WDM) experimental set-up using orthogonal frequency division multiplexing modulation. In addition, a data rate of 250 Mbps is also realized with the standard white light using on-off keying (OOK) modulation. This integrated device shows great potential in full-color micro-LED display, color-tunable micro-light sources, and high-speed WDM VLC multifunctional applications.

Red, green and blue InGaN micro-LEDs for display application: temperature and current density effects.

Micro-LED has attracted tremendous attention as next-generation display, but InGaN red-green-blue (RGB) based high-efficiency micro-LEDs, especially red InGaN micro-LED, face significant challenges and the optoelectronic performance is inevitably affected by environmental factors such as varying temperature and operating current density. Here, we demonstrated the RGB InGaN micro-LEDs, and investigated the effects of temperature and current density for the InGaN RGB micro-LED display. We found that temperature increase can lead to the changes of electrical characteristics, the shifts in electroluminescence spectra, the increase of full width at half maximum and the decreases of light output power, external quantum efficiency, power efficiency, and ambient contrast ratios, while current density increase can also give rise to different changing trends of the varieties of parameters mentioned just above for the RGB micro-LED display, creating great challenges for its application in practical scenarios. Despite of the varying electrical and optical charateristics, relatively high and stable colour gamut of the RGB display can be maintained under changing temperature and current density. Based on the results above, mechanisms on the temperature and current density effects were analyzed in detail, which would be helpful to predict the parameters change of micro-LED display caused by temperature and current density, and provided guidance for improving the performance of InGaN micro-LED display in the future.

High bandwidth series-biased green micro-LED array toward 6 Gbps visible light communication.

In this Letter, a record modulation bandwidth of 1.31 GHz was achieved by a 10 µm c-plane green micro light emitting diode (micro-LED) at a current density of 41.4 kA/cm2. Furthermore, by designing a series-biased 20 µm micro-LED with higher light output power, combined with an orthogonal frequency division multiplexing modulation scheme, a maximum data rate of 5.789 Gbps was achieved at a free-space transmission distance of 0.5 m. This work demonstrates the prospect of c-plane polar green micro-LED in ultrahigh-speed visible light communication, which is expected to realize a high-performance wireless system in the future.

Beyond 25 Gbps optical wireless communication using wavelength division multiplexed LEDs and micro-LEDs.

In this Letter, high-speed optical wireless communication (OWC) with three light-emitting diodes (LED) and five micro-LEDs (µLEDs) is proposed as a proof-of-concept wavelength division multiplexing (WDM) system. It covers a wide spectrum from deep ultraviolet (UV) to visible light and thus could offer both visible light communication (VLC) and UV communication simultaneously. An aggregated data rate of up to 25.20 Gbps over 25 cm free space is achieved, which, to the best of our knowledge, is the highest data rate for LED-based OWC ever reported. Among them, the five µLEDs offer a data rate of up to 18.43 Gbps, which, to the best of our knowledge, is the highest data rate for µLED-based OWC so far. It shows the superiority and potential of µLEDs for WDM-OWC. Additionally, a data rate of 20.11 Gbps for VLC is achieved.

Ultrafast machine vision with artificial neural network devices based on a GaN-based micro-LED array.

GaN-based micro-LED is an emerging display and communication device, which can work as well as a photodetector, enabling possible applications in machine vision. In this work, we measured the characteristics of micro-LED based photodetector experimentally and proposed a feasible simulation of a novel artificial neural network (ANN) device for the first time based on a micro-LED based photodetector array, providing ultrafast imaging (∼133 million bins per second) and a high image recognition rate. The array itself constitutes a neural network, in which the synaptic weights are tunable by the bias voltage. It has the potentials to be integrated with novel machine vision and reconfigurable computing applications, acting as a role of acceleration and similar functionality expansion. Also, the multi-functionality of micro-LED broadens its application potentials of combining ANN with display and communication.

Full-color micro-LED display based on a single chip with two types of InGaN/GaN MQWs.

In this Letter, we have successfully realized the full-color micro-LED display on a single-chip utilizing multi-wavelength multi-quantum wells (MQWs). The epitaxial wafer used for micro-LED array chips is designed with two types of MQWs including In0.1Ga0.9N/GaN and In0.55Ga0.45N/GaN grown by metal-organic chemical vapor deposition (MOCVD). A single-chip broad-spectrum multi-wavelength emission from 620 to 450 nm can be realized by changing the injection current to realize the regulation of carrier injection in the MQWs with different emission wavelengths. And the full-color micro-LED display with uniform brightness can be achieved by adopting the pulse width modulation (PWM) to adjust the duty cycle of micro-LED pixels at different pulse voltages. We expect this study will provide a promising research direction for full-color micro-LED displays, thus effectively avoiding the problems caused during the massive transfer and color conversion.

4.0 Gbps visible light communication in a foggy environment based on a blue laser diode.

Fog has a strong attenuation effect on the optical channel, which will greatly degrade the performance of visible light communication (VLC). Studying the effect of the fog on communication performance is crucial to realize outdoor VLC for next generation networks, but there is little research on this topic. In this work, the transmission characteristics of visible light band in the foggy channel were measured and a high-speed VLC system based on a 450 nm blue laser diode (LD) and 16-ary quadrature amplitude modulation orthogonal frequency division multiplexing (16-QAM-OFDM) in the artificial fog environment was demonstrated experimentally. Through a foggy channel of 60 cm, a maximum data rate of up to 4 Gbps was achieved at the pass loss of 13.06 dB with a bit error rate (BER) of 3.5 × 10-3 below the forward error correction (FEC) limit (3.8 × 10-3), which was the highest data rate ever reported for VLC in the foggy channel. Even at a higher pass loss of 17.32 dB, the proposed system still could achieve a data rate of 2.84 Gbps with a BER of 2.8 × 10-3. Further extending the distance to 16.9 m for a more practical application, a data rate of 2.0 Gbps was also demonstrated successfully.

Computational temporal ghost imaging for long-distance underwater wireless optical communication.

This work proposes an underwater wireless optical communication (UWOC) system based on computational temporal ghost imaging (CTGI) and a low-bandwidth high-sensitivity avalanche photodiode. After measuring the attenuation coefficient of water, a series of neutral density filters is used to attenuate the optical power to estimate the distance of UWOC. Experimental results show that under the conditions of 4 GHz transmitting frequency and 144.37 m estimated distance, through CTGI, we can achieve error-free transmission, and the peak signal-to-noise ratio is much higher than on-off keying. Additionally, after adopting the segmented reconstruction method, under the condition of 4 GHz transmitting frequency and 193.10 m estimated distance, we can also achieve error-free transmission. At the same time, the relationship between UWOC performance and the number of segments is also studied. This research provides a novel UWOC technique that enables high-frequency transmission signals to be detected by a low-bandwidth photodetector for long-distance UWOC.

2 Gbps free-space ultraviolet-C communication based on a high-bandwidth micro-LED achieved with pre-equalization.

In this Letter, we experimentally achieve high-speed ultraviolet-C (UVC) communication based on a 276.8 nm UVC micro-LED. A record ${-}{{3}}\;{\rm{dB}}$ optical bandwidth of 452.53 MHz and light output power of 0.854 mW at a current density of ${{400}}\;{\rm{A/c}}{{\rm{m}}^2}$ are obtained with a chip size of 100 µm. A UVC link over 0.5 m with a data rate of 2 Gbps is achieved using 16-ary quadrature amplitude modulation orthogonal frequency division multiplexing and pre-equalization, and an extended distance over 3 m with a data rate of 0.82 Gbps is also presented. The demonstrated high-speed performance shows that micro-LEDs have great potential in the field of UVC communication.

Whispering-gallery nanocavity plasmon-enhanced Raman spectroscopy.

The synergy effect in nature could enable fantastic improvement of functional properties and associated effects. The detection performance of surface-enhanced Raman scattering (SERS) can be highly strengthened under the cooperation with other factors. Here, greatly-enhanced SERS detection is realized based on rolled-up tubular nano-resonators decorated with silver nanoparticles. The synergy effect between whispering-gallery-mode (WGM) and surface plasmon leads to an extra enhancement at the order of 10(5) compared to non-resonant flat SERS substrates, which can be well tuned by altering the diameter of micron- and nanotubes and the excitation laser wavelengths. Such synchronous and coherent coupling between plasmonics and photonics could lead to new principle and design for various sub-wavelength optical devices, e.g. plasmonic waveguides and hyperbolic metamaterials.

Tubular oxide microcavity with high-index-contrast walls: Mie scattering theory and 3D confinement of resonant modes.

Tubular oxide optical microcavities with thin walls (< 100 nm) have been fabricated by releasing pre-stressed Y2O3/ZrO2 bi-layered nanomembranes. Optical characterization demonstrates strong whispering gallery modes with a high quality-factor and fine structures in the visible range, which are due to their high-index-contrast property (high refractive index in thin walls). Moreover, the strong axial light confinement observed in rolled-up circular nanomembranes well agrees with our theoretical calculation by using Mie scattering theory. Novel material design and superior optical resonant properties in such self-rolled micro-tubular cavities promise many potential applications e.g. in optofluidic sensing and lasing.

Superelastic metal microsprings as fluidic sensors and actuators.

Superelastic metal microsprings fabricated by deterministic rolling of nanomembranes have been anisotropic-strain-engineered via glancing angle deposition. The advantageous applications of metal microsprings in liquid flow rate sensors and chemical-stimulated actuators due to their reliable superelasticity are demonstrated. Theoretical calculation of microspring elongation as a function of flow rate agrees with our experimental observation and reveals that the sensitivity can be well tuned by the geometrical design of the microsprings. Such outstanding mechanical properties of rolled-up metal microsprings should find important applications in future fluidic micro-/nano-devices.