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1.
J Phys Condens Matter ; 34(29)2022 May 19.
Article in English | MEDLINE | ID: mdl-35508146

ABSTRACT

Compact domain features have been observed in spin crossover [Fe{H2B(pz)2}2(bipy)] molecular thin film systems via soft x-ray absorption spectroscopy and photoemission electron microscopy. The domains are in a mixed spin state that on average corresponds to roughly 2/3 the high spin occupation of the pure high spin state. Monte Carlo simulations support the presence of intermolecular interactions that can be described in terms of an Ising model in which interactions beyond nearest-neighbors cannot be neglected. This suggests the presence of short-range order to permit interactions between molecules beyond nearest neighbor that contribute to the formation of largely high spin state domains structure. The formation of a spin state domain structure appears to be the result of extensive cooperative effects.

2.
Chem Commun (Camb) ; 58(5): 661-664, 2022 Jan 13.
Article in English | MEDLINE | ID: mdl-34914817

ABSTRACT

The [Co(SQ)2(4-CN-py)2] complex exhibits dynamical effects over a wide range of temperature. The orbital moment, determined by X-ray magnetic circular dichroism (XMCD) with decreasing applied magnetic field, indicates a nonzero critical field for net alignment of magnetic moments, an effect not seen with the spin moment of [Co(SQ)2(4-CN-py)2].

4.
J Phys Chem Lett ; 11(19): 8231-8237, 2020 Oct 01.
Article in English | MEDLINE | ID: mdl-32878433

ABSTRACT

Voltage-controlled nonvolatile isothermal spin state switching of a [Fe{H2B(pz)2}2(bipy)] (pz = tris(pyrazol-1-1y)-borohydride, bipy = 2,2'-bipyridine) film, more than 40 to 50 molecular layers thick, is possible when it is adsorbed onto a molecular ferroelectric substrate. Accompanying this high-spin and low-spin state switching, at room temperature, we observe a remarkable change in conductance, thereby allowing not only nonvolatile voltage control of the spin state ("write") but also current sensing of the molecular spin state ("read"). Monte Carlo Ising model simulations of the high-spin state occupancy, extracted from X-ray absorption spectroscopy, indicate that the energy difference between the low-spin and high-spin state is modified by 110 meV. Transport measurements demonstrate that four terminal voltage-controlled devices can be realized using this system.

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