ABSTRACT
In the cutting-edge world, semiconductor metal oxides usually tend to have a high optical band gap (>3.0 eV), significantly acceptable for potential optoelectronic applications. The present study discusses the synthesize of pristine tungsten trioxide (WO3) and Silver (Ag) doped WO3 (Ag: WO3) thin films onto a glass substrate at 450 °C, with varying concentrations of Ag doping (2, 4, 6, 8 and 10 at.%) using a simple Spray Pyrolysis Technique. Field emission scanning electron microscopy (FESEM) analysis showed the presence of particles in the WO3 and Ag: WO3 materials. The X-ray diffraction (XRD) pattern confirmed that the samples' hexagonal structure remained intact. In addition, Rietveld refinement was used for the samples to study the crystal structure meticulously. Because of the surface plasmon resonance effect, the samples' distinguishing characteristics were visible in their optical nature. For pristine WO3, the experimental band gap was determined to be 3.20 eV, and for varying doping concentrations, it was found to be 3.15 eV-2.90 eV, respectively. Furthermore, the fracture has remained imperceptible at elevated concentrations, resulting in a substantial influence on the optical characteristics of 10% Ag: WO3 thin films. The estimated redox potential for 2% Ag: WO3 shows a considerable influence of the band edge potential of the Conduction Band (CB) and Valance Band (VB). The activation energy was determined using temperature-dependent electrical resistivity and exhibited an ohmic nature. The synthesized material exhibited a negative temperature coefficient (NTC) effect at higher concentrations of doping, suggesting its potential applicability as a thermistor. A comprehensive analysis of this present study indicates that Ag can be a viable candidate for doping on WO3 thin films for use in optoelectronic devices.
ABSTRACT
A simple and inexpensive spray pyrolysis deposition (SPD) approach was used to produce TiO2 and Cr (2-8) at.%-doped TiO2 thin films. To explore the morphological features of the films, FE-SEM micrographs were used and found that 6 and 8 at.% TiO2:Cr films had fibrous patterns with diameters of 0.45 and 0.78 µm, respectively, while the remainder of the films were agglomerated particles. From X-ray diffraction investigation, it was found that the TiO2 thin films had an anatase crystal phase (tetragonal) up to 6 at.% Cr doping, while an anatase-rutile mixed crystalline phase was identified for 8 at.% Cr doping. The crystallite size of the pristine TiO2 film was 35 nm, while for TiO2:Cr films, it ranges from 35 to 46 nm. The Fizeau fringes technique was employed to measure the thickness of the TiO2 film and 165 nm was found for pristine TiO2 and 164-180 nm for TiO2:Cr films. UV-visible spectroscopy was used to study optical properties such as absorbance, refractive index, optical band gap, dielectric constant, and optical conductivity. As the Cr concentration increases, the optical band gap decreases from 3.40 eV to 2.70 eV. Using the four-point probe method, it was found that the resistivity changes with temperature and is also affected by the Cr content.
