In-Plane Deformation Mechanics for Highly Stretchable Electronics.

Scissoring in thick bars suppresses buckling behavior in serpentine traces that have thicknesses greater than their widths, as detailed in a systematic set of analytical and experimental studies. Scissoring in thick copper traces enables elastic stretchability as large as ≈350%, corresponding to a sixfold improvement over previously reported values for thin geometries (≈60%).

Rugged and breathable forms of stretchable electronics with adherent composite substrates for transcutaneous monitoring.

Research in stretchable electronics involves fundamental scientific topics relevant to applications with importance in human healthcare. Despite significant progress in active components, routes to mechanically robust construction are lacking. Here, we introduce materials and composite designs for thin, breathable, soft electronics that can adhere strongly to the skin, with the ability to be applied and removed hundreds of times without damaging the devices or the skin, even in regions with substantial topography and coverage of hair. The approach combines thin, ultralow modulus, cellular silicone materials with elastic, strain-limiting fabrics, to yield a compliant but rugged platform for stretchable electronics. Theoretical and experimental studies highlight the mechanics of adhesion and elastic deformation. Demonstrations include cutaneous optical, electrical and radio frequency sensors for measuring hydration state, electrophysiological activity, pulse and cerebral oximetry. Multipoint monitoring of a subject in an advanced driving simulator provides a practical example.

Visualizing and quantifying charge distributions correlated to threshold voltage shifts in lateral organic transistors.

Lateral organic field-effect transistors (OFETs), consisting of a polystyrene (PS) polymer gate material and a pentacene organic semiconductor (OSC), were electrically polarized from bias stress during operation or in a separate charging step, and investigated with scanning Kelvin probe microscopy (SKPM) and current-voltage determinations. The charge storage inside the polymer was indicated, without any alteration of the OFET, as a surface voltage with SKPM, and correlated to a threshold voltage (VT) shift in the transistor operation. The SKPM method allows the gate material/OSC interface of the OFET to be visualized and the surface voltage variation between the two gate material interfaces to be mapped. The charge distribution for three samples was derived from the surface voltage maps using Poisson's equation. Charge densities calculated this way agreed with those derived from the VT shifts and the lateral gate-OSC capacitance. We also compared the behavior of two other polymers with PS: PS accepted the most static charge in its entire volume, poly(2-trifluoromethylstyrene) (F-PS) had the most stability to bias stress, and poly(methyl methacrylate) (PMMA) showed the most leakage current and least consistent response to static charging of the three polymers. This work provides a clear demonstration that surface voltage on a working OFET gate material can be related to the quantity of static charge responsible for bias stress and nonvolatility in OFETs.

Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides.

Leakage currents through the gate dielectric of thin film transistors remain a roadblock to the fabrication of organic field-effect transistors (OFETs) on ultrathin dielectrics. We report the first investigation of a self-assembled monolayer (SAM) dipole as an electrostatic barrier to reduce leakage currents in n-channel OFETs fabricated on a minimal, leaky ∼10 nm SiO2 dielectric on highly doped Si. The electric field associated with 1H,1H,2H,2H-perfluoro-octyltriethoxysilane (FOTS) and octyltriethoxysilane (OTS) dipolar chains affixed to the oxide surface of n-Si gave an order of magnitude decrease in gate leakage current and subthreshold leakage and a two order-of-magnitude increase in ON/OFF ratio for a naphthalenetetracarboxylic diimide (NTCDI) transistor. Identically fabricated devices on p-Si showed similarly reduced leakage and improved performance for oxides treated with the larger dipole FOTS monolayer, while OTS devices showed poorer transfer characteristics than those on bare oxide. Comparison of OFETs on both substrates revealed that relative device performance from OTS and FOTS treatments was dictated primarily by the organosilane chain and not the underlying siloxane-substrate bond. This conclusion is supported by the similar threshold voltages (VT) extrapolated for SAM-treated devices, which display positive relative VT shifts for FOTS on either substrate but opposite VT shifts for OTS treatment on n-Si and p-Si. Our results highlight the potential of dipolar SAMs as performance-enhancing layers for marginal quality dielectrics, broadening the material spectrum for low power, ultrathin organic electronics.

Effects of pulsing and interfacial potentials on tellurium-organic heterostructured films.

Polycrystalline thin films of tellurium and organic semiconductor molecules are paired in heterostructured field-effect transistors built on Si/SiO2 substrates. While charge carrier mobilities can exceed 1 cm(2)/(V s), there is only a limited gate voltage range over which the current is modulated. We employ continuous and pulsed measurements on transistors to explore the influence of charge equilibration time on device behavior, finding that pulsed gating improves output characteristics. We also use surface potential measurements to investigate the interfacial vacuum level offset between materials, and we modify the interlayer potential profile by interposing statically charged dielectric layers on the silicon dioxide. We show that interfacial fields determine the gate voltage range over which Te shows a field effect in heterostructures with organic semiconductors and that modification of these fields can extend this range.

Peptide-Based Supramolecular Semiconductor Nanomaterials via Pd-Catalyzed Solid-Phase "Dimerizations".

We report a streamlined method for the synthesis of peptides embedded with complex and easily variable π-conjugated oligomeric subunits from commercially available precursors. These modified peptides self-assemble under aqueous conditions to form one-dimensional nanomaterials containing networks of π-stacked conduits, despite the inclusion of π-conjugated oligomers with quadrupoles extended over larger areas. The procedure has circumvented solubility and other synthetic issues to allow for the facile formation of a diverse library of bioelectronic nanomaterials, including a complex sexithiophene-containing peptide whose nanostructures display gate-induced conductivity within field effect transistors.

Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 µA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 µm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.

Layer-by-layer assembly of UV-resistant poly(3,4-ethylenedioxythiophene) thin films.

The layer-by-layer assembly technique was used to create electrically conductive films with poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) and branched polyethylenimine (BPEI). Titanium dioxide (TiO(2)) and carbon black were used to prevent UV-degradation of these PEDOT-PSS thin film assemblies. Film growth and conductivity were studied, while varying composition and examining the effect of UV absorbing particles on the electrical conductivity. All films showed similar initial sheet resistances, but after exposure to 365 nm UV light for 9 days (correlating to approximately 4 years of sunlight), the films containing TiO(2) were up to 250 times more conductive. Additionally, the TiO(2) containing films were 27% more optically transparent than films made with PEDOT in the absence of TiO(2). The addition of colloidal titania allows the useful life of the PEDOT films to be extended without the detrimental effects of decreased transparency. Doping the PEDOT with dimethylsulfoxide produced eight bilayer films that were almost 6 times more conductive. However, the degradation rate for the doped PEDOT films without TiO(2) was 10 times greater than the doped films with TiO(2).