Synthesis and characterization of P δ-layer in SiO2 by monolayer doping.

Achieving the required control of dopant distribution and selectivity for nanostructured semiconducting building block is a key issue for a large variety of applications. A promising strategy is monolayer doping (MLD), which consists in the creation of a well-ordered monolayer of dopant-containing molecules bonded to the surface of the substrate. In this work, we synthesize a P δ-layer embedded in a SiO2 matrix by MLD. Using a multi-technique approach based on time of flight secondary ion mass spectrometry (ToF-SIMS) and Rutherford backscattering spectrometry (RBS) analyses, we characterize the tuning of P dose as a function of the processing time and temperature. We found the proper conditions for a full grafting of the molecules, reaching a maximal dose of 8.3 × 10(14) atoms/cm(2). Moreover, using 1D rate equation model, we model P diffusion in SiO2 after annealing and we extract a P diffusivity in SiO2 of 1.5 × 10(17) cm(2) s(-1).

Thermodynamic stability of high phosphorus concentration in silicon nanostructures.

Doping of Si nanocrystals (NCs) has been the subject of a strong experimental and theoretical debate for more than a decade. A major difficulty in the understanding of dopant incorporation at the nanoscale is related to the fact that theoretical calculations usually refer to thermodynamic equilibrium conditions, whereas, from the experimental point of view, impurity incorporation is commonly performed during NC formation. This latter circumstance makes impossible to experimentally decouple equilibrium properties from kinetic effects. In this report, we approach the problem by introducing the dopants into the Si NCs, from a spatially separated dopant source. We induce a P diffusion flux to interact with the already-formed and stable Si NCs embedded in SiO2, maintaining the system very close to the thermodynamic equilibrium. Combining advanced material synthesis, multi-technique experimental quantification and simulations of diffusion profiles with a rate-equation model, we demonstrate that a high P concentration (above the P solid solubility in bulk Si) within Si NCs embedded in a SiO2 matrix corresponds to an equilibrium property of the system. Trapping within the Si NCs embedded in a SiO2 matrix is essentially diffusion limited with no additional energy barrier, whereas de-trapping is prevented by a binding energy of 0.9 eV, in excellent agreement with recent theoretical findings that highlighted the impact of different surface terminations (H- or O-terminated NCs) on the stability of the incorporated P atoms.

Integrated architecture for the electrical detection of plasmonic resonances based on high electron mobility photo-transistors.

We report the design of an integrated platform for on-chip electrical transduction of the surface plasmon resonance supported by a nanostructured metal grating. The latter is fabricated on the active area of a GaAs/AlGaAs photo-HEMT and simultaneously works as the electronic gate of the device. The gold plasmonic crystal has a V-groove profile and has been designed by numerical optical simulations. By showing that the numerical models accurately reproduce the phototransistors experimental response, we demonstrate that the proposed architecture is suitable for the development of a new class of compact and scalable SPR sensors.

Integration of biological responses from a suite of bioassays for the Venice Lagoon (Italy) through sediment toxicity index - part A: development and comparison of two methodological approaches.

Marine and coastal quality assessment, based on test batteries involving a wide array of endpoints, organisms and test matrices, needs for setting up toxicity indices that integrate multiple toxicological measures for decision-making processes and that classify the continuous toxicity response into discrete categories according to the European Water Framework Directive. Two toxicity indices were developed for the lagoon environment such as the Venice Lagoon. Stepwise procedure included: the construction of a database that identified test-matrix pairs (indicators); the selection of a minimum number of ecotoxicological indicators, called toxicological core metrics (CMs-tox) on the basis of specific criteria; the development of toxicity scores for each CM-tox; the integration of the CMs-tox into two indices, the Toxicity Effect Index (TEI), based on the transformation of Toxic Unit (TU) data that were integrated as logarithmic sum, and the Weighted Average Toxicity Index (WATI), starting from toxicity classes integrated as weighted mean. Results from the indices are compared; advantages and drawbacks of both approaches are discussed.

Mechanism of boron diffusion in amorphous silicon.

We have elucidated the mechanism for B migration in the amorphous (a-) Si network. B diffusivity in a-Si is much higher than in crystalline Si; it is transient and increases with B concentration up to 2 x 10(20) B/cm(3). At higher density, B atoms in a-Si quickly precipitate. B diffusion is indirect, mediated by dangling bonds (DB) present in a-Si. The density of DB is enhanced by B accommodation in the a-Si network and decreases because of a-Si relaxation. Accurate data simulations allow one to extract the DB diffusivity, whose activation energy is 2.6 eV. Implications of these results are discussed.

Apparatus to study crystal channeling and volume reflection phenomena at the SPS H8 beamline.

A high performance apparatus has been designed and built by the H8-RD22 collaboration for the study of channeling and volume reflection phenomena in the interaction of 400 GeV/c protons with bent silicon crystals, during the 2006 data taking in the external beamline H8 of the CERN SPS. High-quality silicon short crystals were bent by either anticlastic or quasimosaic effects. Alignment with the highly parallel (8 murad divergence) proton beam was guaranteed through a submicroradian goniometric system equipped with both rotational and translational stages. Particle tracking was possible by a series of silicon microstrip detectors with high-resolution and a parallel plate gas chamber, triggered by various scintillating detectors located along the beamline. Experimental observation of volume reflection with 400 GeV/c protons proved true with a deflection angle of (10.4+/-0.5) murad with respect to the unperturbed beam, with a silicon crystal whose (111) planes were parallel to the beam.

High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal.

The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of the CERN Super Proton Synchrotron. Such a process was observed for a wide interval of crystal orientations relative to the beam axis, and its efficiency exceeds 95%, thereby surpassing any previously observed value. These observations suggest new perspectives for the manipulation of high-energy beams, e.g., for collimation and extraction in new-generation hadron colliders, such as the CERN Large Hadron Collider.

Effect of strain on the carrier mobility in heavily doped p-type Si.

We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2 x 10{20} cm{-3} concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found.

Atomistic mechanism of boron diffusion in silicon.

B diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length lambda. We experimentally demonstrate that both g and lambda strongly depend on the free hole concentration p. At low p, g has a constant trend and lambda increases with p, while at high p, g has a superlinear trend and lambda decreases with p. This demonstrates that BI forms in the two regimes by interaction with neutral and double positive I, respectively, and its charge state has to change by interaction with free holes before diffusing.