All-optical adaptive control of quantum cascade random lasers.

Spectral fingerprints of molecules are mostly accessible in the terahertz (THz) and mid-infrared ranges, such that efficient molecular-detection technologies rely on broadband coherent light sources at such frequencies. If THz Quantum Cascade Lasers can achieve octave-spanning bandwidth, their tunability and wavelength selectivity are often constrained by the geometry of their cavity. Here we introduce an adaptive control scheme for the generation of THz light in Quantum Cascade Random Lasers, whose emission spectra are reshaped by applying an optical field that restructures the permittivity of the active medium. Using a spatial light modulator combined with an optimization procedure, a beam in the near infrared (NIR) is spatially patterned to transform an initially multi-mode THz random laser into a tunable single-mode source. Moreover, we show that local NIR illumination can be used to spatially sense complex near-field interactions amongst modes. Our approach provides access to new degrees of freedom that can be harnessed to create broadly-tunable sources with interesting potential for applications like self-referenced spectroscopy.

Singular charge fluctuations at a magnetic quantum critical point.

Strange metal behavior is ubiquitous in correlated materials, ranging from cuprate superconductors to bilayer graphene, and may arise from physics beyond the quantum fluctuations of a Landau order parameter. In quantum-critical heavy-fermion antiferromagnets, such physics may be realized as critical Kondo entanglement of spin and charge and probed with optical conductivity. We present terahertz time-domain transmission spectroscopy on molecular beam epitaxy-grown thin films of YbRh2Si2, a model strange-metal compound. We observed frequency over temperature scaling of the optical conductivity as a hallmark of beyond-Landau quantum criticality. Our discovery suggests that critical charge fluctuations play a central role in the strange metal behavior, elucidating one of the long-standing mysteries of correlated quantum matter.

Quasi One-Dimensional Metal-Semiconductor Heterostructures.

The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.

4.3 µm quantum cascade detector in pixel configuration.

We present the design simulation and characterization of a quantum cascade detector operating at 4.3µm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3µm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D* of 5⋅107 cmHz/W was measured.

Nucleation of Ga droplets on Si and SiOx surfaces.

We report on gallium droplet nucleation on silicon (100) substrates with and without the presence of the native oxide. The gallium deposition is carried out under ultra-high vacuum conditions at temperatures between 580 and 630 °C. The total droplet volume, obtained from a fit to the diameter-density relation, is used for sample analysis on clean silicon surfaces. Through a variation of the 2D equivalent Ga thickness, the droplet diameter was found to be between 250-1000 nm. Longer annealing times resulted in a decrease of the total droplet volume. Substrate temperatures of 630 °C and above led to Ga etching into the Si substrates and caused Si precipitation around the droplets. In contrast, we obtained an almost constant diameter distribution around 75 nm over a density range of more than two orders of magnitude in the presence of a native oxide layer. Furthermore, the droplet nucleation was found to correlate with the density of surface features on the 'epi-ready' wafer.

Quantum cascade detector utilizing the diagonal-transition scheme for high quality cavities.

A diagonal optically active transition in a quantum cascade detector is introduced as optimization parameter to obtain quality factor matching between a photodetector and a cavity. A more diagonal transition yields both higher extraction efficiency and lower noise, while the reduction of the absorption strength is compensated by the resonant cavity. The theoretical limits of such a scheme are obtained, and the impact of losses and cavity processing variations are evaluated. By optimizing the quantum design for a high quality cavity, a specific detectivity of 10(9) Jones can be calculated for λ = 8µm and T = 300K.

Resonant metamaterial detectors based on THz quantum-cascade structures.

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertical confinement. The metamaterial is processed directly into the top metal contact and is used to couple normal incidence radiation resonantly to the intersubband transitions. The device is capable of detecting light below and above the reststrahlenband of gallium-arsenide corresponding to the mid-infrared and THz spectral region.

THz quantum cascade lasers with wafer bonded active regions.

We demonstrate terahertz quantum-cascade lasers with a 30 µm thick double-metal waveguide, which are fabricated by stacking two 15 µm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the output power is increased by significantly more than a factor of 2 without reducing the maximum operating temperature and without increasing the threshold current.

Detectivity enhancement in quantum well infrared photodetectors utilizing a photonic crystal slab resonator.

We characterize the performance of a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS) resonator. The strongest resonance of the PCS is designed to coincide with the absorption peak frequency at 7.6 µm of the QWIP. To accurately characterize the detector performance, it is illuminated by using single mode mid-infrared lasers. The strong resonant absorption enhancement yields a detectivity increase of up to 20 times. This enhancement is a combined effect of increased responsivity and noise current reduction. With increasing temperature, we observe a red shift of the PCS-QWIP resonance peak of -0.055 cm(-1)/K. We attribute this effect to a refractive index change and present a model based on the revised plane wave method.