Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions.

Lanthanides are largely used in optoelectronics as dopants to enhance the physical and optical properties of semiconducting devices. In this study, lanthanum(III)hydroxide nanoparticles (La(OH)3NPs) are used as a dopant of polyethylenimine (PEI)-functionalized nitrogen (N)-doped graphene quantum dots (PEI-NGQDs). The La(OH)3NPs-dopedPEI-NGQDs nanocomposites are prepared from La(NO)3 in a single step by a green novel method and are characterized by Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Deposited over an n-type Si wafer, the La(OH)3NPs-dopedPEI-NGQDs nanocomposites form Schottky diodes. The I-V characteristics and the photoresponse of the diodes are investigated as a function of the illumination intensity in the range 0-110 mW cm-2 and at room temperature. It is found that the rectification ratio and ideality factor of the diode decrease, while the Schottky barrier and series resistance increase with the enhancing illuminations. As a photodetector, the La(OH)3NPs-dopedPEI-NGQDs/n-Si heterojunction exhibits an appreciable responsivity of 3.9 × 10-3 AW-1 under 22 mW cm-2 at -0.3 V bias and a maximum detectivity of 8.7 × 108 Jones under 22 mW cm-2 at -0.5 V. This study introduces the green synthesis and presents the structural, electrical, and optoelectronic properties of La(OH)3NPs-dopedPEI-NGQDs, demonstrating that these nanocomposites can be promising for optoelectronic applications.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors.

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V-1 s-1 and a memory window up to 1.3 µA. Exposure to a supercontinuum white light source reveals that negative photoconductivity (NPC) and positive photoconductivity (PPC) coexist in the same device. Such behavior is attributed to the chemisorbed O2 molecules, with a minor role of physisorbed H2O molecules. The coexistence of NPC and PPC can be exploited in neuromorphic vision sensors, requiring the human eye retina to process the optical signals through alerting and protection (NPC), adaptation (PPC), followed by imaging and processing. Our results open new avenues for the use of BP and other two-dimentional (2D) semiconducting materials in transistors, memories, and neuromorphic vision sensors for advanced applications in robotics, self-driving cars, etc.

Multilayer WS2 for low-power visible and near-infrared phototransistors.

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 µA/W) around 1250 nm, making the devices promising for telecommunication applications.

Fully printed memristors made with MoS2 and graphene water-based inks.

2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.

Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures.

Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold current during the forward voltage gate sweep, leading to an inversion of the hysteresis in the transfer characteristics of ReS2 nanosheet-based FETs from clockwise to anticlockwise. We explore the impact of temperature, sweeping gate voltage, and pressure on this behavior. Notably, the suppression in current within the subthreshold region coincides with a peak in gate current, which increases beyond a specific temperature but remains unaffected by pressure. We attribute both the suppression in drain current and the presence of peak in gate current to the charge/discharge process of gate oxide traps by thermal-assisted tunnelling. The suppression of the subthreshold current at high temperatures not only reduces power consumption but also extends the operational temperature range of ReS2 nanosheet-based FETs.

Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation.

Field-effect transistors based on molybdenum disulfide (MoS2) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS2 lattice or in the underlying substrate. We fabricated MoS2 field-effect transistors on SiO2/Si substrates, irradiated these devices with Xe30+ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: while the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude. We also find a significantly reduced n-doping (≈1012 cm-2) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS2 field-effect transistor as a memory device with remarkably longer relaxation times (≈ minutes) compared to previous works.

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2.

The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS2-based FETs with Cr-Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr-Au/ReS2 interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing. Through time-resolved photocurrent measurements, we show that the photocurrent increases with temperature and exhibits a linear dependence on the incident light power at both low and room temperatures and a longer rise/decay time at higher temperatures. We surmise that the photocurrent is affected by the photobolometric effect and light-induced desorption of adsorbates which are facilitated by the high temperature and the low pressure.

Advanced Field-Effect Sensors.

Sensors based on the field-effect principle have been used for more than fifty years in a variety of applications ranging from bio-chemical sensing to radiation detection or environmental parameter monitoring [...].

Transition-Metal Dichalcogenides in Electrochemical Batteries and Solar Cells.

The advent of new nanomaterials has resulted in dramatic developments in the field of energy production and storage. Due to their unique structure and properties, transition metal dichalcogenides (TMDs) are the most promising from the list of materials recently introduced in the field. The amazing progress in the use TMDs for energy storage and production inspired us to review the recent research on TMD-based catalysts and electrode materials. In this report, we examine TMDs in a variety of electrochemical batteries and solar cells with special focus on MoS2 as the most studied and used TMD material.

Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector.

Photodetectors based on vertical multi-walled carbon nanotube (MWCNT) film-Si heterojunctions are realized by growing MWCNTs on n-type Si substrates with a top surface covered by Si3N4 layers. Spatially resolved photocurrent measurements reveal that higher photo detection is achieved in regions with thinner MWCNT film, where nearly 100% external quantum efficiency is achieved. Hence, we propose a simple method based on the use of scotch tape with which to tune the thickness and density of as-grown MWCNT film and enhance device photo-response.

Methanol and Ethanol Electrooxidation on ZrO2/NiO/rGO.

Recently, transition metal oxides have been considered for various applications due to their unique properties. We present the synthesis of a three-component catalyst consisting of zirconium oxide (ZrO2), nickel oxide (NiO), and reduced graphene oxide (rGO) in the form of ZrO2/NiO/rGO by a simple one-step hydrothermal method. X-ray powder diffraction (XRD), scanning electron microscope (SEM), and bright-field transmission electron microscopy (BF-TEM) analyses were performed to accurately characterize the catalysts. Cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and linear sweep voltammetry (LSV) analyses were also carried out to investigate the methanol and ethanol alcohol electrooxidation ability of the synthesized nanocatalysts. Inspired by the good potential of metal oxides in the field of catalysts, especially in fuel-cell anodes, we investigated the capability of this catalyst in the methanol oxidation reaction (MOR) and ethanol oxidation reaction (EOR). After proving the successful synthesis and examining the surface morphology of these materials, detailed electrochemical tests were performed to show the outstanding capability of this new nanocatalyst for use in the anode of alcohol fuel cells. ZrO2/NiO/rGO indicated a current density of 26.6 mA/cm2 at a peak potential of 0.52 V and 99.5% cyclic stability in the MOR and a current density of 17.3 mA/cm2 at a peak potential of 0.52 V and 98.5% cyclic stability in the EOR (at optimal concentration/scan rate 20 mV/s), representing an attractive option for use in the anode of alcoholic fuel cells.

A New Electrochemical Sensor for the Detection of Ketoconazole Using Carbon Paste Electrode Modified with Sheaf-like Ce-BTC MOF Nanostructure and Ionic Liquid.

An ultrasensitive and selective voltammetric sensor with an ultratrace-level detection limit is introduced for ketoconazole (KTC) determination in real samples using a modified carbon paste electrode with a sheaf-like Ce-BTC MOF nanostructure and ionic liquid. The as-synthesized nanostructure was characterized by several techniques, including energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM). The electrocatalytic performance of the developed electrode was observed by cyclic voltammetry (CV), differential pulse voltammetry (DPV), linear sweep voltammetry (LSV), and chronoamperometry. The limit of detection (LOD) of the developed sensor for KTC is 0.04 µM, and the response was found to be in the dynamic concentration range of 0.1-110.0 µM in a phosphate buffer solution. The proposed electrode exhibits acceptable electrocatalytic activity for KTC oxidation with a high sensitivity of 0.1342 µA·µM-1. The ability of the fabricated sensor to monitor KTC in real aqueous samples is demonstrated using standard addition data.

Etch and Print: Graphene-Based Diodes for Silicon Technology.

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

MnCo2O4/NiCo2O4/rGO as a Catalyst Based on Binary Transition Metal Oxide for the Methanol Oxidation Reaction.

The demands for alternative energy have led researchers to find effective electrocatalysts in fuel cells and increase the efficiency of existing materials. This study presents new nanocatalysts based on two binary transition metal oxides (BTMOs) and their hybrid with reduced graphene oxide for methanol oxidation. Characterization of the introduced three-component composite, including cobalt manganese oxide (MnCo2O4), nickel cobalt oxide (NiCo2O4), and reduced graphene oxide (rGO) in the form of MnCo2O4/NiCo2O4/rGO (MNR), was investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), and energy-dispersive X-ray (EDX) analyses. The alcohol oxidation capability of MnCo2O4/NiCo2O4 (MN) and MNR was evaluated in the methanol oxidation reaction (MOR) process. The crucial role of rGO in improving the electrocatalytic properties of catalysts stems from its large active surface area and high electrical conductivity. The alcohol oxidation tests of MN and MNR showed an adequate ability to oxidize methanol. The better performance of MNR was due to the synergistic effect of MnCo2O4/NiCo2O4 and rGO. MN and MNR nanocatalysts, with a maximum current density of 14.58 and 24.76 mA/cm2 and overvoltage of 0.6 and 0.58 V, as well as cyclic stability of 98.3% and 99.7% (at optimal methanol concentration/scan rate of 20 mV/S), respectively, can be promising and inexpensive options in the field of efficient nanocatalysts for use in methanol fuel cell anodes.

Screen-Printed Graphite Electrode Modified with Graphene-Co3O4 Nanocomposite: Voltammetric Assay of Morphine in the Presence of Diclofenac in Pharmaceutical and Biological Samples.

This work focuses on the development of a novel electrochemical sensor for the determination of morphine in the presence of diclofenac. The facile synthesis of graphene-Co3O4 nanocomposite was performed. The prepared material (graphene-Co3O4 nanocomposite) was analyzed by diverse microscopic and spectroscopic approaches for its crystallinity, composition, and morphology. Concerning the electrochemical determinations, after drop-casting the as-fabricated graphene-Co3O4 nanocomposite on the surface of a screen-printed graphite electrode (SPGE), their electrochemical performance was scrutinized towards the morphine detection. It was also found that an SPGE modified by a graphene-Co3O4 nanocomposite exhibited better electrocatalytic activity for morphine oxidation than unmodified electrode. Under optimal conditions, the differential pulse voltammetry (DPV) was employed to explore the present sensor (graphene-Co3O4/SPGE), the findings of which revealed a linear dynamic range as broad as 0.02-575.0 µM and a limit of detection (LOD) as narrow as 0.007 µM. The sensitivity was estimated to be 0.4 µM/(µA cm2). Furthermore, the graphene-Co3O4/SPGE sensor demonstrated good analytical efficiency for sensing morphine in the presence of diclofenac in well-spaced anodic peaks. According to the DPV results, this sensor displayed two distinct peaks for the oxidation of morphine and diclofenac with 350 mV potential difference. In addition, the graphene-Co3O4/SPGE was explored for voltammetric determination of diclofenac and morphine in pharmaceutical and biological specimens of morphine ampoule, diclofenac tablet, and urine, where recovery rates close to 100% were recorded for all of the samples.

Transition metal dichalcogenides: Synthesis and use in the development of electrochemical sensors and biosensors.

Recent advances in nanotechnology have introduced transition-metal dichalcogenides (TMDs) as inorganic nanomaterials with exceptional properties and structures, suitable also for catalytic applications. The admirable properties of TMDs include the impressive capability of charge transfer, the large surface to volume ratio (S/V), the energy band gap controllable by the number of layers, the strong interaction with light and the mechanical robustness. They are also cost-effective and highly accessible. The unique features and morphology make TMDs excellent candidates for the fabrication of electrochemical sensing devices. This review article was designed to scrutinize the existing applications of nanostructures TMDs to fabricate electrochemical (bio) sensors. The first part focuses on the production techniques and structural properties of TMD nanostructures. The second part examines the progress made for different TMD bio (sensing) schemes and applications in safety of foodstuff, monitoring of environmental contaminations, analysis of pharmacological preparations and clinical determinations. The last part discusses reported challenges and suggestions on promising opportunities.

Electronic Nanodevices.

The new phenomena observed in nanodevices and the related technological challenges of fabrication and manipulation at the nanoscale have spurred intense theoretical, simulation and experimental research activity [...].

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light.

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe2 nanosheet. We show that the optoelectronic performance of these FETs is strongly affected by air pressure, and it undergoes a dramatic increase in conductivity when the pressure is lowered below the atmospheric one. Surface-adsorbed oxygen and water molecules are very effective in doping ReSe2; hence, FETs based on this two-dimensional (2D) semiconductor can be used as an effective air pressure gauge. Finally, we report negative photoconductivity in the ReSe2 channel that we attribute to a back-gate-dependent trapping of the photo-excited charges.

Screen-printed graphite electrode modified with Co3O4nanoparticles and 2D graphitic carbon nitride as an effective electrochemical sensor for 4-aminophenol detection.

We fabricated a new electrochemical 4-aminophenol sensor based on a nanocomposite of Co3O4nanoparticles and graphite carbon nitride (Co3O4@g-C3N4), used for the modification of a screen-printed electrode (Co3O4@g-C3N4/SPE). The synthesized nanocomposite was characterized using field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction and Fourier transform-infrared (FT-IR) techniques. The electro-oxidation of 4-aminophenol in phosphate buffer solution (pH = 7.0) was investigated via cyclic voltammetry, differential pulse voltammetry and chronoamperometry. The peak current of oxidation in the optimized conditions had a linear relationship with various 4-aminophenol contents (0.05-780.0µM) with a correlation coefficient of 0.9996 and the limit of detection (S/N = 3) of 1.5 × 10-8M. The developed method was successful to determine 4-aminophenol in real specimens, with acceptable outcomes.