ABSTRACT
Barium titanate-on-insulator has demonstrated excellent vertical optical confinement, low loss, and strong electro-optic properties. To fabricate a waveguide-based device, a region of higher refractive index must be created to confine a propagating mode, one way of which is through dry etching to form a ridge. However, despite recent progress achieved in etching barium titanate and similar materials, the sidewall and surface roughness resulting from the physical etching typically used limit the achievable ridge depth. This motivates the exploration of etch-free methods to achieve the required index contrast. Here, we introduce three etch-free methods to create a refractive index contrast in barium titanate-on-insulator, including a metal diffusion method, proton beam irradiation method, and crystallinity control method. Notably, molybdenum-diffused barium titanate leads to a large index change of up to 0.17. The methods provided in this work can be further developed to fabricate various on-chip barium titanate optical waveguide-based devices.
ABSTRACT
The bending effect of self-catalyst zinc oxide nanowires on a photoconducting behavior has been investigated by in-situ scanning electron microscope method and interpreted by analytical modeling. Zinc oxide NWs tend to incline due to geometric instability and because of the piezoelectric properties, which was confirmed by scanning electron microscope images. A cantilever bending model adequately describes the bending and bundling events, which are linked to the electrostatic interaction between nanowires. The light absorption of zinc oxide nanowires in the visible and near infrared bands has been modelled using the finite difference time domain method. The influence of the density of nanowires (25%, 50%, 75%) and the integration of plasmonic nanoparticles distributed on the seed layer (with varied radii) on the light absorption of zinc oxide nanowires was studied using simulation analysis. We have shown that the geometry of zinc oxide nanowires in terms of length, separation distance, and surface charge density affects the process of zinc oxide nanowires bending and bundling and that absorption will be maximized by integrating Au plasmonic nanoparticles with a radius of 10 nm.
ABSTRACT
Severe acute respiratory syndrome SARS-CoV-2 virus led to notable challenges amongst researchers in view of development of new and fast detecting techniques. In this regard, surface-enhanced Raman spectroscopy (SERS) technique, providing a fingerprint characteristic for each material, would be an interesting approach. The current study encompasses the fabrication of a SERS sensor to study the SARS-CoV-2 S1 (RBD) spike protein of the SARS-CoV-2 virus family. The SERS sensor consists of a silicon nanowires (SiNWs) substrate decorated with plasmonic silver nanoparticles (AgNPs). Both SiNWs fabrication and AgNPs decoration were achieved by a relatively simple wet chemical processing method. The study deliberately projects the factors that influence the growth of silicon nanowires, uniform decoration of AgNPs onto the SiNWs matrix along with detection of Rhodamine-6G (R6G) to optimize the best conditions for enhanced sensing of the spike protein. Increasing the time period of etching process resulted in enhanced SiNWs' length from 0.55 to 7.34 µm. Furthermore, the variation of the immersion time in the decoration process of AgNPs onto SiNWs ensued the optimum time period for the enhancement in the sensitivity of detection. Tremendous increase in sensitivity of R6G detection was perceived on SiNWs etched for 2 min (length=0.90 µm), followed by 30s of immersion time for their optimal decoration by AgNPs. These SiNWs/AgNPs SERS-based sensors were able to detect the spike protein at a concentration down to 9.3 × 10-12 M. Strong and dominant peaks at 1280, 1404, 1495, 1541 and 1609 cm-1 were spotted at a fraction of a minute. Moreover, direct, ultra-fast, facile, and affordable optoelectronic SiNWs/AgNPs sensors tuned to function as a biosensor for detecting the spike protein even at a trace level (pico molar concentration). The current findings hold great promise for the utilization of SERS as an innovative approach in the diagnosis domain of infections at very early stages.
ABSTRACT
Electro-optic modulators are among the most important building blocks in optical communication networks. Lithium niobate, for example, has traditionally been widely used to fabricate high-speed optical modulators due to its large Pockels effect. Another material, barium titanate, nominally has a 50 times stronger r-parameter and would ordinarily be a more attractive material choice for such modulators or other applications. In practice, barium titanate thin films for optical waveguide devices are usually grown on magnesium oxide due to its low refractive index, allowing vertical mode confinement. However, the crystal quality is normally degraded. Here, a group of scandate-based substrates with small lattice mismatch and low refractive index compared to that of barium titanate is identified, thus concurrently satisfying high crystal quality and vertical optical mode confinement. This work provides a platform for nonlinear on-chip optoelectronics and can be promising for waveguide-based optical devices such as Mach-Zehnder modulators, wavelength division multiplexing, and quantum optics-on-chip.
ABSTRACT
Vertically-oriented zinc oxide (ZnO) nanowires were synthesized on glass and silicon substrates by Pulsed Laser Deposition and without the use of a catalyst. An intermediate c-axis oriented nanotextured ZnO seed layer in the form of nanowall network with honey comb structure allows the growth of high quality, self-forming, and vertically-oriented nanowires at relatively low temperature (<400 °C) and under argon atmosphere at high pressure (>5 Torr). Many parameters were shown to affect the growth of the ZnO nanowires such as gas pressure, substrate-target distance, and laser energy. Growth of a c-axis-crystalline array of nanowires growing vertically from the energetically favorable sites on the seed layer is observed. Nucleation occurs due to the matching lattice structure and the polar nature of the ZnO seed layer. Morphological, structural, and optical properties were investigated. X-ray diffraction (XRD) revealed highly c-axis aligned nanowires along the (002) crystal plane. Room temperature photoluminescence (PL) measurements showed a strong and narrow bandwidth of Ultraviolet (UV) emission, which shifts to lower wavelength with the increase of pressure.
ABSTRACT
Lithium niobate's use in integrated optics is somewhat hampered by the lack of a capability to create low loss waveguides with strong lateral index confinement. Thin film single crystal lithium niobate is a promising platform for future applications in integrated optics due to the availability of a strong electro-optic effect in this material coupled with the possibility of strong vertical index confinement. However, sidewalls of etched waveguides are typically rough in most etching procedures, exacerbating propagation losses. In this paper, we propose a fabrication method that creates significantly smoother ridge waveguides. This involves argon ion milling and subsequent gas clustered ion beam smoothening. We have fabricated and characterized ultra-low loss waveguides with this technique, with propagation losses as low as 0.3 dB/cm at 1.55 µm.
ABSTRACT
Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the film thickness, and the optical losses that are obtained on the planar waveguides: n0=2.224±0.001 and n(e)=2.219±0.001 at 1539 nm. Furthermore, in order to demonstrate the active property of the BTO films, we have investigated the electro-optic (EO) properties by using the change of the resonant coupling angle (variation of fundamental TE0 guided mode) when the transverse electric field is applied. The latter is induced by the refractive index variation (Δn) caused by the EO effect when a static electric field is applied transversely to the film. The EO coefficient obtain is about 18 pm/V for TE mode and 23 pm/V for TM modes at 1539 nm. This value illustrates the suitability of the BTO material thin film with a polycrystalline structure for applications such as modulations, switching, and interconnections.
ABSTRACT
In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches.
ABSTRACT
Anodic aluminum oxide (AAO) films with different pore sizes were prepared to modulate the effective refractive index and birefringence. To investigate the relationship between the refractive index and the pore size of the AAO film, optical constants were obtained using a prism coupler with various lasers. With experimental results, the dispersion curve of alumina itself without pores was extracted using a theoretical anisotropic model. We demonstrated that AAO films could offer a wide range of refractive index and birefringence values for optical device applications. Furthermore, index profiles as a function of the thickness of the AAO films were obtained by inverse Wentzel-Kramer-Brillouin approximation to examine the optical homogeneity.
ABSTRACT
A monolithic integration of filters on Si or GaAs substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. But, direct monolithic integration of surface acoustic wave (SAW) filters is impossible with Si, which is nonpiezoelectric, and difficult with GaAs, which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we propose a modified coupling-of-modes (COM) approach, which can be used in the practical design of a layered ZnO/Si SAW filter. This is a dispersive SAW-layered filter, and some of the COM parameters become frequency dependent due to the phase velocity dispersion. The frequency response of the 3-step ladder type ZnO/Si SAW filter is analyzed and compared with the experimental results.