Changes to Material Phase and Morphology Due to High-Level Molybdenum Doping of ZnO Nanorods: Influence on Luminescence and Defects.

The influence of Mo on the electronic states and crystalline structure, as well as morphology, phase composition, luminescence, and defects in ZnO rods grown as free-standing nanoparticles, was studied using a variety of experimental techniques. Mo has almost no influence on the luminescence of the grown ZnO particles, whereas shallow donors are strongly affected in ZnO rods. Annealing in air causes exciton and defect-related bands to drop upon Mo doping level. The increase of the Mo doping level from 20 to 30% leads to the creation of dominating molybdates. This leads to a concomitant drop in the number of formed ZnO nanorods.

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.

This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional electron gas (2DEG) of high-electron mobility transistor (HEMT) structures. The widely used technology for the preparation of GaN channels in AlGaN/GaN HEMT transistors is growth at a high temperature of around 1000 °C in an H2 atmosphere. The main reason for these conditions is the aim to prepare an atomically flat epitaxial surface for the AlGaN/GaN interface and to achieve a layer with the lowest possible carbon concentration. In this work, we show that a smooth AlGaN/GaN interface is not necessary for high electron mobility in 2DEG. Surprisingly, when the high-temperature GaN channel layer is replaced by the layer grown at a temperature of 870 °C in an N2 atmosphere using TEGa as a precursor, the electron Hall mobility increases significantly. This unexpected behavior can be explained by a spatial separation of electrons by V-pits from the regions surrounding dislocation which contain increased concentration of point defects and impurities.

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.

A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (VGa). Different correlations between technological parameters and VGa concentration were observed for layers grown from triethyl gallium (TEGa) and trimethyl gallium (TMGa) precursors. In case of TEGa, the formation of VGa was significantly influenced by the type of reactor atmosphere (N2 or H2), while no similar behaviour was observed for growth from TMGa. VGa formation was suppressed with increasing temperature for growth from TEGa. On the contrary, enhancement of VGa concentration was observed for growth from TMGa, with cluster formation for the highest temperature of 1100 °C. From the correlation of photoluminescence results with VGa concentration determined by VEPAS, it can be concluded that yellow band luminescence in GaN is likely not connected with VGa; additionally, increased VGa concentration enhances excitonic luminescence. The probable explanation is that VGa prevent the formation of some other highly efficient nonradiative defects. Possible types of such defects are suggested.

Free-Standing ZnO:Mo Nanorods Exposed to Hydrogen or Oxygen Plasma: Influence on the Intrinsic and Extrinsic Defect States.

Cationic doping of ZnO nanorods has gained increased interest as it can lead to the production of materials with improved luminescent properties, electrical conductivity and stability. We report on various Mo-doped ZnO powders of nanorods synthesized by the hydrothermal growth method. Further annealing or/and cold hydrogen or oxygen plasma modification was applied. The atomic structure of the as-grown and plasma-modified rods was characterized by X-ray diffraction. To identify any possible changes in morphology, scanning electron microscopy was used. Paramagnetic point defects were investigated by electron paramagnetic resonance. In particular, two new types of defects were initiated by the plasma treatment. Their appearance was explained, and corresponding mechanisms were proposed. The changes in the luminescence and scintillation properties were characterized by photo- and radioluminescence, respectively. Charge trapping phenomena were studied by thermally stimulated luminescence. Cold plasma treatment influenced the luminescence properties of ZnO:Mo structures. The contact with hydrogen lead to an approximately threefold increase in intensity of the ultraviolet exciton-related band peaking at ~3.24 eV, whereas the red band attributed to zinc vacancies (~1.97 eV) was suppressed compared to the as-grown samples. The exciton- and defect-related emission subsided after the treatment in oxygen plasma.

Near-field probing of Mie resonances in single TiO2 microspheres at terahertz frequencies.

We show experimentally that poly-crystalline TiO2 spheres, 20-30 µm in diameter, exhibit a magnetic dipole Mie resonance in the terahertz (THz) frequency band (1.0-1.6 THz) with a narrow line-width (<40 GHz). We detect and investigate the magnetic dipole and electric dipole resonances in single high-permittivity TiO2 microspheres, using a near-field probe with a sub-wavelength (~λ/50) size aperture and THz time-domain spectroscopy technique. The Mie resonance signatures are observed in the electric field amplitude and phase spectra, as well as in the electric field distribution near the microspheres. The narrow line-width and the sub-wavelength size (λ/10) make the TiO2 microspheres excellent candidates for realizing low-loss THz metamaterials.