Sandwiched WS2/MoTe2/WS2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding Detectivity.

Photodetectors based on two-dimensional van der Waals (2D vdW) heterostructures with high detectivity and rapid response have emerged as promising candidates for next-generation imaging applications. However, the practical application of currently studied 2D vdW heterostructures faces challenges related to insufficient light absorption and inadequate separation of photocarriers. To address these challenges, we present a sandwiched WS2/MoTe2/WS2 heterostructure with a completely depleted interlayer, integrated on a mirror electrode, for a highly efficient photodetector. This well-designed structure enhances light-matter interactions while facilitating effective separation and rapid collection of photocarriers. The resulting photodetector exhibits a broadband photoresponse spanning from deep ultraviolet to near-infrared wavelengths. When operated in self-powered mode, the device demonstrates an exceptional response speed of 22/34 µs, along with an impressive detectivity of 8.27 × 1010 Jones under 635 nm illumination. Additionally, by applying a bias voltage of -1 V, the detectivity can be further increased to 1.49 × 1012 Jones, while still maintaining a rapid response speed of 180/190 µs. Leveraging these outstanding performance metrics, high-resolution visible-near-infrared light imaging has been successfully demonstrated using this device. Our findings provide valuable insights into the optimization of device architecture for diverse photoelectric applications.

The Neurocomputational Mechanism Underlying Decision-Making on Unfairness to Self and Others.

Fairness is a fundamental value in human societies, with individuals concerned about unfairness both to themselves and to others. Nevertheless, an enduring debate focuses on whether self-unfairness and other-unfairness elicit shared or distinct neuropsychological processes. To address this, we combined a three-person ultimatum game with computational modeling and advanced neuroimaging analysis techniques to unravel the behavioral, cognitive, and neural patterns underlying unfairness to self and others. Our behavioral and computational results reveal a heightened concern among participants for self-unfairness over other-unfairness. Moreover, self-unfairness consistently activates brain regions such as the anterior insula, dorsal anterior cingulate cortex, and dorsolateral prefrontal cortex, spanning various spatial scales that encompass univariate activation, local multivariate patterns, and whole-brain multivariate patterns. These regions are well-established in their association with emotional and cognitive processes relevant to fairness-based decision-making. Conversely, other-unfairness primarily engages the middle occipital gyrus. Collectively, our findings robustly support distinct neurocomputational signatures between self-unfairness and other-unfairness.

Hippocampal Lactate-Infusion Enhances Spatial Memory Correlated with Monocarboxylate Transporter 2 and Lactylation.

Lactate has emerged as a key player in regulating neural functions and cognitive processes. Beyond its function as an energy substrate and signal molecule, recent research has revealed lactate to serve as an epigenetic regulator in the brain. However, the molecular mechanisms by which lactate regulates spatial memory and its role in the prevention of cognitive disorders remain unclear. Herein, we injected L-lactate (10 µmol/kg/d for 6 d) into the mouse's hippocampus, followed by the Morris water maze (MWM) test and molecular analyses. Improved spatial memory performances were observed in mice injected with lactate. Besides, lactate upregulated the expression of synaptic proteins post-synaptic density 95 (PSD95), synaptophysin (SYP), and growth associated protein 43 (GAP43) in hippocampal tissues and HT22 cells, suggesting a potential role in synaptic transmission and memory formation. The facilitative role of monocarboxylate transporter 2 (MCT2), a neuron-specific lactate transporter, in this process was confirmed, as MCT2 antagonists attenuated the lactate-induced upregulation of synaptic proteins. Moreover, lactate induced protein lactylation, a post-translational modification, which could be suppressed by MCT2 inhibition. RNA sequencing of lactated-injected hippocampal tissues revealed a comprehensive gene expression profile influenced by lactate, with significant changes in genes associated with transcriptional progress. These data demonstrate that hippocampal lactate injection enhances spatial memory in mice, potentially through the upregulation of synaptic proteins and induction of protein lactylation, with MCT2 playing a crucial role in these processes. Our findings shed light on the multi-faceted role of lactate in neural function and memory regulation, opening new avenues for therapeutic interventions targeting cognitive disorders.

Asymmetric XMoGeY2 (X = S, Se, Te; Y = N, P, As) monolayers as potential flexible materials for nano piezoelectric devices and nanomedical sensors.

Highly efficient nano piezoelectric devices and nanomedical sensors are in great demand for high-performance piezoelectric materials. In this work, we propose new asymmetric XMoGeY2 (X = S, Se, Te; Y = N, P, As) monolayers with excellent piezoelectric properties, dynamic stability and flexible elastic properties. The piezoelectric coefficients (d11) of XMoGeY2 monolayers range from 2.92 to 8.19 pm V-1. Among them, TeMoGeAs2 exhibits the highest piezoelectric coefficient (d11 = 8.19 pm V-1), which is 2.2 times higher than that of common 2D piezoelectric materials such as 2H-MoS2 (d11 = 3.73 pm V-1). Furthermore, all XMoGeY2 monolayers demonstrate flexible elastic properties ranging from 96.23 to 253.70 N m-1. Notably, TeMoGeAs2 has a Young's modulus of 96.23 N m-1, which is only one-third of that of graphene (336 N m-1). The significant piezoelectric coefficients of XMoGeY2 monolayers can be attributed to their asymmetric structures and flexible elastic properties. This study provides valuable insights into the potential applications of XMoGeY2 monolayers in nano piezoelectric devices and nanomedical sensors.

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering.

Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 1014 Jones, light on/off ratio of 1.2 × 106, and rise/fall time of 112.4/426.8 µs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe2, WS2, and MoS2. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.

Emerging ferroelectric materials ScAlN: applications and prospects in memristors.

The research found that after doping with rare earth elements, a large number of electrons and holes will be produced on the surface of AlN, which makes the material have the characteristics of spontaneous polarization. A new type of ferroelectric material has made a new breakthrough in the application of nitride-materials in the field of integrated devices. In this paper, the application prospects and development trends of ferroelectric material ScAlN in memristors are reviewed. Firstly, various fabrication processes and structures of the current ScAlN thin films are described in detail to explore the implementation of their applications in synaptic devices. Secondly, a series of electrical properties of ScAlN films, such as the current switching ratio and long-term cycle durability, were tested to explore whether their electrical properties could meet the basic needs of memristor device materials. Finally, a series of summaries on the current research studies of ScAlN thin films in the synaptic simulation are made, and the working state of ScAlN thin films as a synaptic device is observed. The results show that the ScAlN ferroelectric material has high residual polarization, no wake-up function, excellent stability and obvious STDP behavior, which indicates that the modified material has wide application prospects in the research and development of memristors.

Pressure-induced novel ZrN4 semiconductor materials with high dielectric constants: a first-principles study.

In addition to Zr3N4 and ZrN2 compounds, zirconium nitrides with a rich family of phases always exhibit metal phases. By employing an evolutionary algorithm approach and first-principles calculations, we predicted seven novel semiconductor phases for the ZrN4 system at 0-150 GPa. Through calculating phonon dispersions, we identified four dynamically stable semiconductor structures under ambient pressure, namely, α-P1̄, ß-P1̄, γ-P1̄, and ß-P1 (with bandgaps of 1.03 eV, 1.10 eV, 2.33 eV, and 1.49 eV calculated using the HSE06 hybrid density functional, respectively). The calculated work functions and dielectric functions show that the four dynamically stable semiconductor structures are all high dielectric constant (high-k) materials, among which the ß-P1̄ phase has the largest static dielectric constant (3.9 times that of SiO2). Furthermore, we explored band structures using the HSE06 functional and density of states (DOS) and the response of bandgaps to pressure using the PBE functional for the four new semiconductor configurations. The results show that the bandgap responses of the four structures exhibit significant differences when hydrostatic pressure is applied from 0 to 150 GPa.

Activating HfX2 (X = S, Se and Te) for the hydrogen evolution reaction by introducing defects: a first-principles study.

An ideal catalyst should have a relative hydrogen adsorption Gibbs free energy (ΔGH) close to zero [J. K. Nørskov, et al., J. Electrochem. Soc., 2005, 152, J23]. However, most of the known catalysts cannot reach this standard. Based on first-principles calculations, we studied the hydrogen evolution reaction (HER) catalytic performance of pristine and defect (including vacancy and heteroatom doping) structures in terms of its ΔGH. We found that the ΔGH values of Co-doped HfS2 and P-doped HfSe2 are extremely close to zero, even closer than that of Pt (111), indicating that they are excellent catalysts. Moreover, we found that the source of the HER catalytic performance of Co-doped HfS2 is the reduction of electron accumulation of the active site S atom. Our work provides two potential ideal catalysts and provides guidance for the experimental group to search for suitable catalysts.

Pressure-Induced Phase Diagram and Electronic Structure Evolves during the Insulator-Metal Transition of Bulk BiFeO3.

BiFeO3 is the most widely known multiferroic at room temperature, possessing both ferroelectricity and antiferromagnetism. It has high Curie temperature and Néel temperature, i.e., 1103 and 643 K, respectively. Despite these unique properties, the pressure-induced phase diagram of bulk BiFeO3 has remained controversial. Based on the ab initio evolutionary algorithm, we systematically searched for the potential stable structures of bulk BiFeO3 at 0-50 GPa. It is identified that there are five pressure-induced phase transition sequences R3c-G-AFM →(5GPa) C2/m-G-AFM →(15GPa) Pnma-G-AFM →(24GPa) Pnma-FM →(35GPa) Imma-FM →(45GPa) Cmcm-FM, which provided a comprehensive pressure-induced phase diagram. As the pressure increases, we discovered an interesting phenomenon: a pressure-induced magnetic sequence transition, i.e., BiFeO3 transitions from an antiferromagnetic to a ferromagnetic sequence. Concurrently, the electronic structure evolves during the insulator-metal transition, influenced not only by the pressure but also by the phase transition. Our research has elucidated the long-standing question of the phase transition sequence of the BiFeO3 system under pressure and provided theoretical support for the insulator-metal transition.

Motif-Based Exploration of Halide Classes of Li5M10.5M20.5X8 Conductors Using the DFT Method: Toward High Li-Ion Conductivity and Improved Stability.

The development of all-solid-state lithium-ion batteries (ASSLIBs) is highly dependent on solid-state electrolyte (SSEs) performance. However, current SSEs cannot satisfactorily meet the requirements for high interfacial stability and Li-ion conductivity, especially under high-voltage cycling conditions. To overcome the intractable problems, we theoretically develop the chemistry of structural units to build a series of MX6-unit mixed framework Li5M10.5M20.5X8 (total 184 halides) for use as SSEs and recommend six halide candidates that combine the (electro)chemical stability with a low Li-ion migration barrier. Among them, three Li5M10.5M20.5F8 compounds (M1 = Ca and Mg; M2 = Ti and Zr) exhibit expansive electrochemical windows with a high cathodic limit (6.3 V vs µLi) and three-dimensional Li diffusion associated with moderate Li-migration barriers. To discuss their stability and compatibility (and in turn as a reference for experiments), the energy above the convex hull, the electrochemical stability window, the predicted (electro)reaction products, and the calculated reaction energies of Li5M10.5M20.5X8 in combination with Li-metal and several cathodes are tabulated. We stress that the importance of the cation-mixed effect and specific moieties for the halide anion leads to a design principle for a halide class of Li-ion SSEs. We provide insight into selecting the optimal halide anion and cations and open a new avenue of broad compositional spaces for stable Li-ion SSEs.

Layered Li-Co-B as a Low-Potential Anode for Lithium-Ion Batteries.

An anode material is one of the key factors affecting the capacity, cycle, and rate (fast charge) performance of lithium-ion batteries. Using the adaptive genetic algorithm, we found a new ground-state Li2CoB and two metastable states LiCoB and LiCo2B2 in the Li-Co-B system. The Li2CoB phase is a lithium-rich layered structure, and it has an equivalent lithium-ion migration barrier (0.32 eV) in addition to the lower voltage platform (0.05 V) than graphite, which is the most important commercial anode material at present. Moreover, we analyzed the mechanism of delithiation for Li2CoB and found that it maintained metallicity in the process of delithiation, indicating its good conductivity as an electrode material. Therefore, it is an excellent potential anode material for lithium-ion batteries. Our work provides a promising theoretical basis for the experimental synthesis of Li-Co-B and similar new materials.

Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices.

With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi2 Se3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe2 channel realizes a high responsivity of 20.5 A W-1 , an excellent detectivity of 2.18 × 1012  Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.

Prediction of the hardest BiFeO3 from first-principles calculations.

BiFeO3 is the only material with ferroelectric Curie temperature and Néel temperature higher than room temperature, making it one of the most well-studied multiferroic materials. Based on an ab initio evolutionary algorithm, we predicted a new cubic C-type antiferromagnetic structure (Fd3̄m-BiFeO3) at ambient pressure. It was found that Fd3̄m-BiFeO3 is the hardest BiFeO3 (Vickers hardness ∼ 9.12 GPa), about 78% harder than R3c-BiFeO3 (the well-known multiferroic material), which contributes to extending the life of BiFeO3 devices. In addition, Fd3̄m-BiFeO3 has the largest shear modulus (83.74 GPa) and the largest Young's modulus (214.72 GPa). Besides, we found an interesting phenomenon that among the common multiferroic materials (BiFeO3, BaTiO3, PbTiO3, SrRuO3, KNbO3, and BiMnO3), Pnma-BiMnO3 has the largest bulk modulus, and its bulk modulus is about 15% larger than that of Fd3̄m-BiFeO3. However, its Vickers hardness (4.47 GPa) is much smaller than that of Fd3̄m-BiFeO3. This is because the Vickers hardness is proportional to the shear modulus and the shear modulus of Fd3̄m-BiFeO3 is larger than that of Pnma-BiMnO3. This work provides a deeper and more comprehensive understanding of BiFeO3.

High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2 /Te Tunneling Heterostructure.

Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.

Simultaneous Oxidative Cleavage of Lignin and Reduction of Furfural via Efficient Electrocatalysis by P-Doped CoMoO4.

Electrochemical oxidative lignin cleavage and coupled 2-furaldehyde reduction provide a promising approach for producing high-value added products. However, developing efficient bifunctional electrocatalysts with noble-metal-like activity still remains a challenge. Here, an efficient electrochemical strategy is reported for the selective oxidative cleavage of Cα -Cß bonds in lignin into aromatic monomers by tailoring the electronic structure through P-doped CoMoO4 spinels (99% conversion, highest monomer selectivity of 56%). Additionally, the conversion and selectivity of 2-furaldehyde reduction to 2-methyl furan reach 87% and 73%, respectively. In situ Fourier transform infrared and density functional theory analysis reveal that an upward shift of the Ed upon P-doping leads to an increase in the antibonding level, which facilitates the Cα -Cß adsorption of the lignin model compounds, thereby enhancing the bifunctional electrocatalytic activity of the active site. This work explores the potential of a spinel as a bifunctional electrocatalyst for the oxidative cracking of lignin and the reductive conversion of small organic molecules to high-value added chemicals via P-anion modulation.

Lignin-derived carbon-supported MoC-FeNi heterostructure as efficient electrocatalysts for oxygen evolution reaction.

Developing noble-metal-free electrocatalysts for efficient oxygen evolution reactions (OER) is urgently desired to obtain green hydrogen by water electrolysis. Coupling FeNi catalysts with other transition metals is an effective strategy to improve the OER performance, but the electronic structure regulation of the catalytic center is challenging. Herein, heterostructures catalyst composed of MoC and FeNi alloy embedded in N-doped biochar (denoted as MoC-FeNi@NLC) was in situ synthesized by pyrolysis of lignin-metals coordination complex. MoC-FeNi@NLC displayed an overpotential of 198 mV and a long steady running time of 200 h at 10 mA·cm-2 in alkaline media. Furthermore, MoC-FeNi@NLC has demonstrated excellent Faradaic efficiency (FE) of over 90 %. A voltage of 1.50 V was required based on the MoC-FeNi@NLC and Pt/C coupling system, which was superior to that of commercial noble metal catalysts (Pt/C || Ir/C, 1.57 V). The density functional theory demonstrated that FeNi alloy balanced the adsorption energy of OER intermediates and regulated the orbital overlap of Mo above Fermi level. While the lignin-derived carbon layer prevented the deactivation and dissolution of catalytic center. The construction strategy of transition metal alloys and carbides heterojunction by the assistance of sustainable lignin derivatives and its structure-activity relationship toward OER electrocatalytic process provides a promising and cost-efficient pathway for the design of high-performance and stable OER catalysts.

High-Throughput Screening of Strong Electron-Phonon Couplings in Ternary Metal Diborides.

We perform a high-throughput screening on phonon-mediated superconductivity in a ternary metal diboride structure with alkali, alkaline earth, and transition metals. We find 17 ground states and 78 low-energy metastable phases. From fast calculations of zone-center electron-phonon coupling, 43 compounds are revealed to show electron-phonon coupling strength higher than that of MgB2. An anticorrelation between the energetic stability and electron-phonon coupling strength is identified. We suggest two phases, i.e., Li3ZrB8 and Ca3YB8, to be synthesized, which show reasonable energetic stability and superconducting critical temperature.

Defect-Induced Ultrafast Nonadiabatic Electron-Hole Recombination Process in PtSe2 Monolayer.

Defects are inevitable in two-dimensional materials due to the growth condition, which results in many unexpected changes in materials' properties. Here, we have mainly discussed the nonradiative recombination dynamics of PtSe2 monolayer without/with native point defects. Based on first-principles calculations, a shallow p-type defect state is introduced by a Se antisite, and three n-type defect states with a double-degenerate shallow defect state and a deep defect state are introduced by a Se vacancy. Significantly, these defect states couple strongly to the pristine valence band maximum and lead to the enhancement of the in-plane vibrational Eg mode. Both factors appreciably increase the nonadiabatic coupling, accelerating the electron-hole recombination process. An explanation of PtSe2-based photodetectors with the slow response, compared to conventional devices, is provided by studying this nonradiative transitions process.

Accurately Controlling the Occupation of Eu2+ in Cs(K, Na)3(Li3SiO4)4 to Achieve Narrow-Band Green Emission for Wide Color Gamut Displays.

The development of narrow-band phosphors for wide color gamut displays in multimodal phosphors through selective site occupancy engineering is an important challenge. In this work, by replacing Na ions with K ions in the cyan-green double-band emitting phosphor CsK0.9Na2(Li3SiO4)4: 10%Eu2+, the occupation of Eu2+ in Cs(K, Na)3(Li3SiO4)4 was accurately controlled from occupying three sites of Cs, K1, and Na to occupying only one site of K2/Na. The obtained phosphor CsK1.9Na(Li3SiO4)4: 10%Eu2+ exhibits a single narrow-band green emission at 531 nm (the full width at half-maximum of 46 nm) with excellent thermal stability of luminescence from 80 to 523 K (96.3% @423 K of the intensity of integrated emission at room temperature and 94.9% @300 K of the intensity of integrated emission at 80 K). The white light-emitting diode (wLED) that was fabricated by combining a blue LED chip with this narrow-band green phosphor and red phosphor K2SiF6: Mn4+ presents a satisfactory wide color gamut of 128.1% of the National Television Standards Committee, which demonstrates the important application value of the phosphor in the wide color gamut displays field. This work provides an effective design strategy for exploring narrow-band phosphors through selective site occupancy engineering, which will facilitate the exploration of relevant narrow-band emitters in the future.

Semiconductors with a chiral crystal structure in group IVB transition metal pernitrides.

Group IVB transition metal (TM) nitrides rarely exhibit the semiconductor phase, except for TM3N4 (TM = Ti, Zr, and Hf) compounds. In this study, using the ab initio calculations based on density functional theory, we report two chiral crystal structures, namely P3121 and P3221, of TMN2, which are dynamically stable at ambient pressure. Unlike conventional metal phases of transition metal dinitrides, the P3121 and P3221 configurations exhibit intriguing semiconductor properties (with bandgaps of 1.076 eV, 1.341 eV, and 1.838 eV for TiN2, ZrN2, and HfN2, respectively). The mechanism of metal-to-semiconductor transition from the I4/mcm to P3121 phase is deeply explored by investigating their crystal structure and electronic structures. When hydrostatic pressure is applied from 0 GPa to 200 GPa, the bandgaps of the P3121 phase of TiN2, ZrN2, and HfN2 exhibit a different response, which is related to the orbital contribution at the conduction band minimum (CBM) and valence band maximum (VBM) and the lattice constants. Furthermore, according to the calculated mechanical properties, P3121 and P3221 phases exhibit higher bulk and shear moduli than the semiconductor phases of c-Zr3N4 and c-Hf3N4 in the corresponding systems.