ABSTRACT
The surfaces of (100) GaAs were irradiated with In+ ions. The implanted samples were isobaric annealed at 800°C and then of dielectric function, the surface atomic concentrations of atoms and also the chemical composition of the near surface layers in these implanted semiconductor samples were obtained. The following investigation methods were used: spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry analyses (RBSA) and X-ray photoelectron spectroscopy (XPS) in the study of the above mentioned quantities, respectively. The change of the shape spectra of the dielectric functions at about 3.0eV phonon energy, diffusion of In+ ions as well as chemical composition changes were observed after ion implantation and the thermal treatment. Due to displacement of Ga ions from GaAs by the In+ ions the new chemical compound InAs was formed. The relative amounts Ga2O3 and As2O3 ratio increase in the native oxide layers with the fluences increase after the thermal treatment of the samples. Additionally, it was noticed that the quantities of InO2 increase with the increasing values of the irradiated ions before thermal treatment.
ABSTRACT
A new numerical Monte Carlo method based model of a hot cavity surface ionization ion source is presented in this paper. The model, intended to support the studies on ionization phenomena in a widely used class of ion sources, takes into account geometry of the ion source and extraction system, ionizer temperature and other features. The results of ion source efficiency calculations for various configurations of the extraction field are reviewed. The dominant role of the ionizer region near the extraction opening is described. Simulated dependences of ionization efficiency on the working parameters like ionizer length and temperature, ionization potential of the substance, and extraction voltage are discussed. A good agreement of the experimental data (e.g., influence of ionizer temperature, current-voltage curve) and the predictions of the model is found. It is also shown that the contribution to the ionization yield from impact of thermionic electrons accelerated by the extraction field may be significant, especially for the substances of small surface ionization coefficient. The simulation results are compared to the predictions of different theoretical models of the ion source--the obtained simulation data are in accordance both with a well-known Kirchner formula and the so called spherical ionizer model.
Subject(s)
Monte Carlo Method , Electrons , Ions/chemistry , Surface PropertiesABSTRACT
The best method for the impurity doping to the host material is the ion implantation. Due to high melting point of the rare earth standard metal ion sources are useless. One of the solution is to use chemical compounds of rare earths characterized by low melting point. In this paper we describe the novel design of the ion source suitable for refractory metal (e.g., rare earths) ion implantation. The dependencies of Eu(+) current on cathode and arc currents as well as on hydrogen flow are presented. Europium (III) chloride as the source of the europium atoms was used. Europium ions were produced during collisions of evaporated and decomposed EuCl(3) molecules with fast electrons. The typical current of the europium ion beam extracted from the ion source was 25 microA for the extraction voltage of 25 kV. The ion source works without maintenance breaks for approximately 50 h, which enables high dose implantation. The presented ion source needs neither advanced high power supplies nor high vacuum regime.
ABSTRACT
The construction of an experimental apparatus, for investigation of implantation, secondary ion emission and sputtering processes, during irradiation of samples with an ion beam of up to 70 keV energy, is described. The basis of the apparatus is an electromagnetic mass separator equipped with a quadrupole mass spectrometer located in the collector chamber. The computer data acquisition control system makes it possible to perform the experimental measurements with high accuracy and precision. Preliminary results of secondary ion mass spectral measurements, obtained for C, Al, Si and Cu targets bombarded with Ar(+) and Kr(+) ions, are presented.