Rational design of Lewis base molecules for stable and efficient inverted perovskite solar cells.

Lewis base molecules that bind undercoordinated lead atoms at interfaces and grain boundaries (GBs) are known to enhance the durability of metal halide perovskite solar cells (PSCs). Using density functional theory calculations, we found that phosphine-containing molecules have the strongest binding energy among members of a library of Lewis base molecules studied herein. Experimentally, we found that the best inverted PSC treated with 1,3-bis(diphenylphosphino)propane (DPPP), a diphosphine Lewis base that passivates, binds, and bridges interfaces and GBs, retained a power conversion efficiency (PCE) slightly higher than its initial PCE of ~23% after continuous operation under simulated AM1.5 illumination at the maximum power point and at ~40°C for >3500 hours. DPPP-treated devices showed a similar increase in PCE after being kept under open-circuit conditions at 85°C for >1500 hours.

20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction.

Bandgap gradient is a proven approach for improving the open-circuit voltages (VOCs) in Cu(In,Ga)Se2 and Cu(Zn,Sn)Se2 thin-film solar cells, but has not been realized in Cd(Se,Te) thin-film solar cells, a leading thin-film solar cell technology in the photovoltaic market. Here, we demonstrate the realization of a bandgap gradient in Cd(Se,Te) thin-film solar cells by introducing a Cd(O,S,Se,Te) region with the same crystal structure of the absorber near the front junction. The formation of such a region is enabled by incorporating oxygenated CdS and CdSe layers. We show that the introduction of the bandgap gradient reduces the hole density in the front junction region and introduces a small spike in the band alignment between this and the absorber regions, effectively suppressing the nonradiative recombination therein and leading to improved VOCs in Cd(Se,Te) solar cells using commercial SnO2 buffers. A champion device achieves an efficiency of 20.03% with a VOC of 0.863 V.

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking.

The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and Voc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSexTe1-x layer.

Effects of Cu Precursor on the Performance of Efficient CdTe Solar Cells.

Copper (Cu) incorporation is a key process for fabricating efficient CdTe-based thin-film solar cells and has been used in CdTe-based solar cell module manufacturing. Here, we investigate the effects of different Cu precursors on the performance of CdTe-based thin-film solar cells by incorporating Cu using a metallic Cu source (evaporated Cu) and ionic Cu sources (solution-processed cuprous chloride (CuCl) and copper chloride (CuCl2)). We find that ionic Cu precursors offer much better control in Cu diffusion than the metallic Cu precursor, producing better front junction quality, lower back-barrier heights, and better bulk defect property. Finally, outperforming power conversion efficiencies of 17.2 and 17.5% are obtained for devices with cadmium sulfide and zinc magnesium oxide as the front window layers, respectively, which are among the highest reported CdTe solar cells efficiencies. Our results suggest that an ionic Cu precursor is preferred as the dopant to fabricate efficient CdTe thin-film solar cells and modules.

Back-Surface Passivation of CdTe Solar Cells Using Solution-Processed Oxidized Aluminum.

Although back-surface passivation plays an important role in high-efficiency photovoltaics, it has not yet been definitively demonstrated for CdTe. Here, we present a solution-based process, which achieves passivation and improved electrical performance when very small amounts of oxidized Al3+ species are deposited at the back surface of CdTe devices. The open circuit voltage (Voc) is increased and the fill factor (FF) and photoconversion efficiency (PCE) are optimized when the total amount added corresponds to ∼1 monolayer, suggesting that the passivation is surface specific. Addition of further Al3+ species, present in a sparse alumina-like layer, causes the FF and PCE to drop as the interface layer becomes blocking to current flow. The optimized deposit increases the average baseline PCE for both Cu-free devices and devices where Cu is present as a dopant. The greatest improvement is found when the Al3+ species are deposited prior to the CdCl2 activation step and Cu is employed. In this case, the best-cell efficiency was improved from 12.6 to 14.4%. Time-resolved photoluminescence measurements at the back surface and quantum efficiency measurements performed at the maximum power point indicate that the performance enhancement is due to a reduction in the interface recombination current at the back surface.

CuSCN as the Back Contact for Efficient ZMO/CdTe Solar Cells.

The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasitic light absorption by the buffer layer. However, due to the atmosphere sensitivity of ZMO film, the post treatments of ZMO/CdTe stacks, including CdCl2 treatment, back contact deposition, etc., which are critical for high-performance CdTe solar cells became crucial challenges. To realize the full potential of the ZMO buffer layer, plenty of investigations need to be accomplished. Here, copper thiocyanate (CuSCN) is demonstrated to be a suitable back-contact material with multi-advantages for ZMO/CdTe solar cells. Particularly, ammonium hydroxide as the solvent for CuSCN deposition shows no detrimental impact on the ZMO layer during the post heat treatment. The post annealing temperature as well as the thickness of CuSCN films are investigated. Finally, a champion power conversion efficiency of 16.7% is achieved with an open-circuit voltage of 0.857 V, a short-circuit current density of 26.2 mA/cm2, and a fill factor of 74.0%.

Charge Compensating Defects in Methylammonium Lead Iodide Perovskite Suppressed by Formamidinium Inclusion.

Temperature-dependent photoluminescence (PL) spectroscopy measurements have been performed over a range from 9 K to room temperature on polycrystalline methylammonium (MA)/formamidinium (FA) lead iodide (MA1-xFAxPbI3) perovskite thin films. Our low-temperature PL analysis reveals the existence of charge compensating defects in MAPbI3, which may explain the lower net free carrier concentration in MAPbI3 perovskite. More interestingly, we observe the suppression of the PL emission associated with the charged defects by appropriate FA inclusion. Furthermore, FA incorporation into MAPbI3 has been found to slow the phase transformation of MA1-xFAxPbI3 from orthorhombic to tetragonal phase, which occurs with increasing temperature. Our analyses of the FA concentration's impact on defect density and structural phase transformation provide beneficial insights that improve the understanding of the photovoltaic properties and application of organic-inorganic metal halide perovskites.

Dithieno[3,2-b:2',3'-d]pyrrole Cored p-Type Semiconductors Enabling 20 % Efficiency Dopant-Free Perovskite Solar Cells.

Organic p-type semiconductors with tunable structures offer great opportunities for hybrid perovskite solar cells (PVSCs). We report herein two dithieno[3,2-b:2',3'-d]pyrrole (DTP) cored molecular semiconductors prepared through π-conjugation extension and an N-alkylation strategy. The as-prepared conjugated molecules exhibit a highest occupied molecular orbital (HOMO) level of -4.82 eV and a hole mobility up to 2.16×10-4  cm2 V-1 s-1 . Together with excellent film-forming and over 99 % photoluminescence quenching efficiency on perovskite, the DTP based semiconductors work efficiently as hole-transporting materials (HTMs) for n-i-p structured PVSCs. Their dopant-free MA0.7 FA0.3 PbI2.85 Br0.15 devices exhibit a power conversion efficiency over 20 %, representing one of the highest values for un-doped molecular HTMs based PVSCs. This work demonstrates the great potential of using a DTP core in designing efficient semiconductors for dopant-free PVSCs.

Impact of Moisture on Photoexcited Charge Carrier Dynamics in Methylammonium Lead Halide Perovskites.

Organic-inorganic metal halide perovskites are notoriously unstable in humid environments. While many studies have revealed the morphology and crystal structure changes that accompany exposure to humidity, little is known about changes to the photophysics that accompany the degradation process. By combining in situ steady-state and time-resolved photoluminescence with Hall effect measurements, we examined the changes in the photoexcited carrier dynamics for methylammonium lead iodide (MAPbI3) and bromide (MAPbBr3) films exposed to nitrogen gas containing water vapor at 80% relative humidity. The changes in the photophysics of MAPbI3 interacting with water follow a four-stage process, consisting of surface passivation, free electron doping, interfacial hydration, and bulk hydration. In contrast, MAPbBr3 exhibits only features associated with the first two stages, which occur at a faster rate. Our results elucidate the degradation mechanisms of perovskite films in high humidity from the perspective of the photophysics, providing insights for how humidity affects the stability of the perovskite materials.

Real Time Spectroscopic Ellipsometry Analysis of First Stage CuIn1-xGaxSe2 Growth: Indium-Gallium Selenide Co-Evaporation.

Real time spectroscopic ellipsometry (RTSE) has been applied for in-situ monitoring of the first stage of copper indium-gallium diselenide (CIGS) thin film deposition by the three-stage co-evaporation process used for fabrication of high efficiency thin film photovoltaic (PV) devices. The first stage entails the growth of indium-gallium selenide (In1-xGax)2Se3 (IGS) on a substrate of Mo-coated soda lime glass maintained at a temperature of 400 °C. This is a critical stage of CIGS deposition because a large fraction of the final film thickness is deposited, and as a result precise compositional control is desired in order to achieve the optimum performance of the resulting CIGS solar cell. RTSE is sensitive to monolayer level film growth processes and can provide accurate measurements of bulk and surface roughness layer thicknesses. These in turn enable accurate measurements of the bulk layer optical response in the form of the complex dielectric function ε = ε1 - iε2, spectra. Here, RTSE has been used to obtain the (ε1, ε2) spectra at the measurement temperature of 400 °C for IGS thin films of different Ga contents (x) deduced from different ranges of accumulated bulk layer thickness during the deposition process. Applying an analytical expression in common for each of the (ε1, ε2) spectra of these IGS films, oscillator parameters have been obtained in the best fits and these parameters in turn have been fitted with polynomials in x. From the resulting database of polynomial coefficients, the (ε1, ε2) spectra can be generated for any composition of IGS from the single parameter, x. The results have served as an RTSE fingerprint for IGS composition and have provided further structural information beyond simply thicknesses, for example information related to film density and grain size. The deduced IGS structural evolution and the (ε1, ε2) spectra have been interpreted as well in relation to observations from scanning electron microscopy, X-ray diffractometry and energy-dispersive X-ray spectroscopy profiling analyses. Overall the structural, optical and compositional analysis possible by RTSE has assisted in understanding the growth and properties of three stage CIGS absorbers for solar cells and shows future promise for enhancing cell performance through monitoring and control.

Enhanced Grain Size, Photoluminescence, and Photoconversion Efficiency with Cadmium Addition during the Two-Step Growth of CH3NH3PbI3.

Control over grain size and crystallinity is important for preparation of methylammonium lead iodide (MAPbI3) solar cells. We explore the effects of using small concentrations of Cd2+ and unusually high concentrations of methylammonium iodide during the growth of MAPbI3 in the two-step solution process. In addition to improved crystallinity and an enhancement in the size of the grains, time-resolved photoluminescence measurements indicated a dramatic increase in the carrier lifetime. As a result, devices constructed with the Cd-modified perovskites showed nearly a factor of 2 improvement in the power conversion efficiency (PCE) relative to similar devices prepared without Cd addition. The grains also showed a higher degree of orientation in the ⟨110⟩ direction, indicating a change in the growth mechanism, and the films were compact and smooth. We propose a Cd-modified film growth mechanism that invokes a critical role for low-dimensional Cd perovskites to explain the experimental observations.

Probing Photocurrent Nonuniformities in the Subcells of Monolithic Perovskite/Silicon Tandem Solar Cells.

Perovskite/silicon tandem solar cells with high power conversion efficiencies have the potential to become a commercially viable photovoltaic option in the near future. However, device design and optimization is challenging because conventional characterization methods do not give clear feedback on the localized chemical and physical factors that limit performance within individual subcells, especially when stability and degradation is a concern. In this study, we use light beam induced current (LBIC) to probe photocurrent collection nonuniformities in the individual subcells of perovskite/silicon tandems. The choices of lasers and light biasing conditions allow efficiency-limiting effects relating to processing defects, optical interference within the individual cells, and the evolution of water-induced device degradation to be spatially resolved. The results reveal several types of microscopic defects and demonstrate that eliminating these and managing the optical properties within the multilayer structures will be important for future optimization of perovskite/silicon tandem solar cells.

High speed, intermediate resolution, large area laser beam induced current imaging and laser scribing system for photovoltaic devices and modules.

We have developed a laser beam induced current imaging tool for photovoltaic devices and modules that utilizes diode pumped Q-switched lasers. Power densities on the order of one sun (100 mW/cm2) can be produced in a ∼40 µm spot size by operating the lasers at low diode current and high repetition rate. Using galvanostatically controlled mirrors in an overhead configuration and high speed data acquisition, large areas can be scanned in short times. As the beam is rastered, focus is maintained on a flat plane with an electronically controlled lens that is positioned in a coordinated fashion with the movements of the mirrors. The system can also be used in a scribing mode by increasing the diode current and decreasing the repetition rate. In either mode, the instrument can accommodate samples ranging in size from laboratory scale (few cm2) to full modules (1 m2). Customized LabVIEW programs were developed to control the components and acquire, display, and manipulate the data in imaging mode.

Improving the Performance of Formamidinium and Cesium Lead Triiodide Perovskite Solar Cells using Lead Thiocyanate Additives.

Formamidinium lead triiodide (FAPbI3 ) is considered as an alternative to methylammonium lead triiodide (MAPbI3 ) because of its lower band gap and better thermal stability. However, owing to the large size of FA cations, it is difficult to synthesize high-quality FAPbI3 thin films without the formation of an undesirable yellow phase. Smaller sized cations, such as MA and Cs, have been successfully used to suppress the formation of the yellow phase. Whereas FA and MA lead triiodide perovskite solar cells (PVSCs) have achieved power conversion efficiencies (PCEs) higher than 20 %, the PCEs of formamidinium and cesium lead triiodide (FA1-x Csx PbI3 ) PVSCs have been only approximately 16.5 %. Herein, we report our examination of the main factors limiting the PCEs of (FA1-x Csx PbI3 ) PVSCs. We find that one of the main limiting factors could be the small grain sizes (≈120 nm), which leads to relatively short carrier lifetimes. We further find that adding a small amount of lead thiocyanate [Pb(SCN)2 ] to the precursors can enlarge the grain size of (FA1-x Csx PbI3 ) perovskite thin films and significantly increase carrier lifetimes. As a result, we are able to fabricate (FA1-x Csx PbI3 ) PVSCs with significantly improved open-circuit voltages and fill factors and, therefore, enhanced PCEs. With an optimal 0.5 mol % Pb(SCN)2 additive, the average PCE is increased from 16.18±0.50 (13.45±0.78) % to 18.16±0.54 (16.86±0.63) % for planar FA0.8 Cs0.2 PbI3 PVSCs if measured under reverse (forward) voltage scans. The champion cell registers a PCE of 19.57 (18.12) % if measured under a reverse (forward) voltage scan, which is comparable to that of the best-performing MA-containing planar FA-based lead halide PVSCs.

Fabrication of Efficient Low-Bandgap Perovskite Solar Cells by Combining Formamidinium Tin Iodide with Methylammonium Lead Iodide.

Mixed tin (Sn)-lead (Pb) perovskites with high Sn content exhibit low bandgaps suitable for fabricating the bottom cell of perovskite-based tandem solar cells. In this work, we report on the fabrication of efficient mixed Sn-Pb perovskite solar cells using precursors combining formamidinium tin iodide (FASnI3) and methylammonium lead iodide (MAPbI3). The best-performing cell fabricated using a (FASnI3)0.6(MAPbI3)0.4 absorber with an absorption edge of ∼1.2 eV achieved a power conversion efficiency (PCE) of 15.08 (15.00)% with an open-circuit voltage of 0.795 (0.799) V, a short-circuit current density of 26.86(26.82) mA/cm(2), and a fill factor of 70.6(70.0)% when measured under forward (reverse) voltage scan. The average PCE of 50 cells we have fabricated is 14.39 ± 0.33%, indicating good reproducibility.

n-Type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells.

The n-type transition metal oxides (TMO) consisting of molybdenum oxide (MoO(x)) and vanadium oxide (V(2)O(x)) are used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS quantum dot solar cells (QDSC). A 4.4% NREL-certified device based on the MoO(x) HEL is reported with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS quantum dot (QD) layer directly. We find the acting mechanism of the hole extraction layer to be a dipole formed at the MoO(x) and PbS interface enhancing band bending to allow efficient hole extraction from the valence band of the PbS layer by MoO(x). The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoO(x) layer.

Quantum dot size dependent J-V characteristics in heterojunction ZnO/PbS quantum dot solar cells.

The current-voltage (J-V) characteristics of ZnO/PbS quantum dot (QD) solar cells show a QD size-dependent behavior resulting from a Schottky junction that forms at the back metal electrode opposing the desirable diode formed between the ZnO and PbS QD layers. We study a QD size-dependent roll-over effect that refers to the saturation of photocurrent in forward bias and crossover effect which occurs when the light and dark J-V curves intersect. We model the J-V characteristics with a main diode formed between the n-type ZnO nanocrystal (NC) layer and p-type PbS QD layer in series with a leaky Schottky-diode formed between PbS QD layer and metal contact. We show how the characteristics of the two diodes depend on QD size, metal work function, and PbS QD layer thickness, and we discuss how the presence of the back diode complicates finding an optimal layer thickness. Finally, we present Kelvin probe measurements to determine the Fermi level of the QD layers and discuss band alignment, Fermi-level pinning, and the V(oc) within these devices.

Variations in the quantum efficiency of multiple exciton generation for a series of chemically treated PbSe nanocrystal films.

We study multiple exciton generation (MEG) in two series of chemically treated PbSe nanocrystal (NC) films. We find that the average number of excitons produced per absorbed photon varies between 1.0 and 2.4 (+/-0.2) at a photon energy of approximately 4E(g) for films consisting of 3.7 nm NCs and between 1.1 and 1.6 (+/-0.1) at hnu approximately 5E(g) for films consisting of 7.4 nm NCs. The variations in MEG depend upon the chemical treatment used to electronically couple the NCs in each film. The single and multiexciton lifetimes also change with the chemical treatment: biexciton lifetimes increase with stronger inter-NC electronic coupling and exciton delocalization, while single exciton lifetimes decrease after most treatments relative to the same NCs in solution. Single exciton lifetimes are particularly affected by surface treatments that dope the films n-type, which we tentatively attribute to an Auger recombination process between a single exciton and an electron produced by ionization of the dopant donor. These results imply that a better understanding of the effects of surface chemistry on film doping, NC carrier dynamics, and inter-NC interactions is necessary to build solar energy conversion devices that can harvest the multiple carriers produced by MEG. Our results show that the MEG efficiency is very sensitive to the condition of the NC surface and suggest that the wide range of MEG efficiencies reported in the recent literature may be a result of uncontrolled differences in NC surface chemistry.

Schottky solar cells based on colloidal nanocrystal films.

We describe here a simple, all-inorganic metal/NC/metal sandwich photovoltaic (PV) cell that produces an exceptionally large short-circuit photocurrent (>21 mA cm(-2)) by way of a Schottky junction at the negative electrode. The PV cell consists of a PbSe NC film, deposited via layer-by-layer (LbL) dip coating that yields an EQE of 55-65% in the visible and up to 25% in the infrared region of the solar spectrum, with a spectrally corrected AM1.5G power conversion efficiency of 2.1%. This NC device produces one of the largest short-circuit currents of any nanostructured solar cell, without the need for sintering, superlattice order or separate phases for electron and hole transport.

Photophysics of (CdSe)ZnS colloidal quantum dots in an aqueous environment stabilized with amino acids and genetically-modified proteins.

Using a combination of two amino acids, histidine and N-acetyl-cysteine, to replace the original organic capping groups of (CdSe)ZnS quantum dots, water-soluble and highly luminescent (CdSe)ZnS quantum dots have been successfully prepared at pH 8. Characterization by steady-state and time-resolved photoluminescence spectroscopy, and transient absorption spectroscopy, demonstrate that the electronic properties of these quantum dots exceed those of the original as-synthesized samples dissolved in a more-conventional organic solvent. Furthermore, these amino acid-stabilized quantum dots have been assembled onto a cellulose substrate via cellulose binding proteins that specifically bind to cellulose and was genetically engineered to harbor dual hexahistidine tags at the N- and C-termini to confer binding with the zinc(II) on the quantum dot surface. The spectroscopic measurements show that the protein-bound quantum dots continue to retain their desirable electronic properties when bound on the substrate. Meanwhile, the specific and very selective binding properties of the proteins have remained effective.