Graphite/h-BN van der Waals heterostructure as a gate stack for HgTe quantum wells.

Two-dimensional topological insulators have attracted much interest due to their potential applications in spintronics and quantum computing. To access the exotic physical phenomena, a gate electric field is required to tune the Fermi level into the bulk band gap. Hexagonal boron nitride (h-BN) is a promising alternative gate dielectric due to its unique advantages such as flat and charge-free surface. Here we present a h-BN/graphite van der Waals heterostructure as a top gate on HgTe heterostructure-based Hall bar devices. We compare our results to devices with h-BN/Ti/Au and HfO2/Ti/Au gates. Devices with a h-BN/graphite gate show no charge carrier density shift compared to as-grown structures, in contrast to a significant n-type carrier density increase for HfO2/Ti/Au. We attribute this observation mainly to the comparable work function of HgTe and graphite. In addition, devices with h-BN gate dielectric show slightly higher electron mobility compared to HfO2-based devices. Our results demonstrate the compatibility between layered materials transfer and wet-etched structures and provide a strategy to solve the issue of significant shifts of the carrier density in gated HgTe heterostructures.

Realization of smooth side profile using diffusion-controlled wet chemical etching for HgTe/(Hg,Cd)Te heterostructures.

We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures from two-dimensional HgTe/(Hg,Cd)Te-based topological insulators. For this purpose, we employ a KI: I2: HBr: H2O-based etchant. Investigation of the side profile of the etched heterostructure reveals that HgTe quantum wells protrude from the layer stack as a result of the different etch rates of the layers. This constraint poses challenges for the study of the transport properties of edge channels in HgTe quantum wells. In order to achieve a smoother side profile, we develop a novel approach to the etching process involving the incorporation of a sacrificial design element in the etch mask. This limits the flow of charge carriers to the ions in the electrolyte during the etching process. The simplicity of the method coupled with the promising results achieved thereby should make it possible for the new approach introduced here to be applied to other semiconductor heterostructures.

Oxytocin Receptor Gene DNA Methylation: A Biomarker of Treatment Response in Obsessive-Compulsive Disorder?

INTRODUCTION: Obsessive-compulsive disorder (OCD) is associated with high chronicity and treatment resistance, indicating the need for early therapy response markers enabling fast and personalized treatment adaptations. Although epigenetic mechanisms such as DNA methylation of the oxytocin receptor (OXTR) gene have previously been linked to OCD pathogenesis, epigenetic markers as predictors of treatment success have not yet been investigated in OCD. OBJECTIVE: For the first time, this therapyepigenetic study aimed to investigate the role of OXTR methylation as a treatment response marker in OCD. METHODS: In total, 113 inpatients with OCD (57 females) were compared to 113 age- and sex-matched healthy controls. Patients were investigated over a 10-week course of standardized, OCD-specific cognitive-behavioral psychotherapy. Clinical response was measured using the Yale-Brown Obsessive Compulsive Scale (Y-BOCS) at baseline, before in vivo exposure, and after therapy. OXTR exon III methylation was analyzed via direct sequencing of sodium bisulfite-treated DNA extracted from blood cells. RESULTS: Relative OXTR hypermethylation was observed in OCD patients compared to healthy controls. In OCD, higher baseline OXTR methylation was found to predict impaired treatment response at both categorical (responders vs. nonresponders) and dimensional (relative Y-BOCS reduction) levels, whereas lower baseline methylation was related to treatment response and greater symptom improvements. Analysis of Y-BOCS subdimensions revealed that the association between OXTR hypermethylation with impaired treatment response applied especially to symptoms related to obsessions, but not compulsions. CONCLUSIONS: OXTR hypermethylation may constitute a predictive marker of impaired treatment response in OCD and thus carries great potential for future personalized treatment efforts in OCD.