ABSTRACT
Highly ordered TiO2 NT arrays were easily decorated with CdSe via RF magnetron sputtering. After deposition thermal annealing at different temperatures was performed to obtain an improved TiO2/CdSe interface. The heterostructures were characterized by RBS, SEM, XRD, HRTEM, UV-Vis, EIS, IPCE and current versus voltage curves. The sensitized semiconducting electrodes display an enhanced photocurrent density of ca. 2 mA cm(-2) at 0.6 V (vs. Ag/AgCl) under visible light (λ > 400 nm). The sensitized photoelectrodes displayed 3 and 535-fold enhanced photocurrent when compared to bare TiO2 NTs under 1 sun and under visible light illumination, respectively. IES results confirmed the improved charge transfer across the TiO2/CdSe/electrolyte interface after annealing at 400 °C. Incident photon-to-electron conversion efficiency measurements confirmed the efficient sensitization by allowing photoresponse in the visible range.