ABSTRACT
In this study, Er3+ doped ZnO semiconductor quantum dots (QDs) were synthesized using a wet chemical method. The successful doping of Er3+ ions into the ZnO host lattice and the elemental composition was confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The ZnO and Er3+ doped ZnO QDs with a hexagonal structure, spherical shape, and particle size of approximately 5 nm were revealed by XRD and transmission electron microscopy (TEM). The absorption, luminescence properties, and fluorescence lifetimes of the samples were studied as the concentration of Er3+ ions varied. The intensity parameters, emission transition probabilities, branching ratios, and emission lifetimes of the excited levels of Er3+ ions in the ZnO host were determined using the Judd-Ofelt theory, which provided insight into the covalent relationship between the ions and ligands as well as the nature of the ZnO host lattice. Moreover, the energy transfer process from the ZnO host to Er3+ ions and the yield of this process are explained in detail along with specific calculations. The Er3+ doped ZnO QDs displayed a significantly longer lifetime than undoped ZnO, which opens up many potential applications in fields such as photocatalysis, optoelectronics, photovoltaics, and biosensing.
ABSTRACT
BiCuSeO oxyselenide, one of the best oxygen-containing thermoelectric materials, is promising with great potential applications. In this work, we present a high ZT of >1.3 in Bi0.90Pb0.10Cu0.96Fe0.04SeO fabricated via microwave synthesis and subsequent spark plasma sintering (SPS). We added 3-4 atom % Fe to the Pb-doped BiCuSeO to regulate the hole carrier concentration and mobility to 0.8-1.0 × 1020 cm-3 and â¼40 cm2 V-1 S-1, respectively, achieving moderate electrical conductivity, high Seebeck coefficient, and low carrier thermal conductivity simultaneously in a dual-doped sample. Under the synergistic enhancement by stress field, dislocation, and nanophase, the lattice thermal conductivity of Bi0.90Pb0.10Cu0.96Fe0.04SeO is limited to 0.24-0.49 W m-1 K-1 at 300-873 K. The development of efficient preparation methods for high-performance thermoelectric materials is significant to promote the application of thermoelectric conversion technology.
