ABSTRACT
A non-destructive Raman spectroscopy has been widely used as a complimentary method to X-ray diffraction characterization of Cu2ZnSnS4 (CZTS) thin films, yet our knowledge of the Raman active fundamental modes in this material is far from complete. Focusing on polarized Raman spectroscopy provides important information about the relationship between Raman modes and CZTS crystal structure. In this framework the zone-center optical phonons of CZTS, which is most usually examined in active layers of the CZTS based solar cells, are studied by polarized resonant and non-resonant Raman spectroscopy in the range from 60 to 500 cm(-1) on an oriented single crystal. The phonon mode symmetry of 20 modes from the 27 possible vibrational modes of the kesterite structure is experimentally determined. From in-plane angular dependences of the phonon modes intensities Raman tensor elements are also derived. Whereas a strong intensity enhancement of the polar E and B symmetry modes is induced under resonance conditions, no mode intensity dependence on the incident and scattered light polarization configurations was found in these conditions. Finally, Lyddane-Sachs-Teller relations are applied to estimate the ratios of the static to high-frequency optic dielectric constants parallel and perpendicular to c-optical axis.
ABSTRACT
Bulk crystals of Cu(2)ZnSiTe(4) (CZSiTe) have been prepared by modified Bridgman method and have been investigated by single crystal X-ray method, Energy Dispersive X-Ray analysis and Raman scattering techniques. The structural studies revealed that the CZSiTe compounds crystallizes in the tetragonal space group I4¯2m, with a = b = 5.9612(1) Å and c = 11.7887(4) Å at 293 K. The Raman spectrum characteristic of the crystals exhibits nine peaks, with two dominant peaks at approximately 134 cm(-1) and 151 cm(-1) that can be used as fingerprint peaks for the identification of this compound. The Raman peaks were analyzed on the basis of the derived irreducible representation for the zone center phonons and by comparison with experimental and theoretical data from close related semiconductors as Cu(2)FeSnS(4) and Cu(2)ZnSnSe(4).
ABSTRACT
Cu2ZnSnSe4 kesterite compounds are some of the most promising materials for low-cost thin-film photovoltaics. However, the synthesis of absorbers for high-performing devices is still a complex issue. So far, the best devices rely on absorbers grown in a Zn-rich and Cu-poor environment. These off-stoichiometric conditions favor the presence of a ZnSe secondary phase, which has been proved to be highly detrimental for device performance. Therefore, an effective method for the selective removal of this phase is important. Previous attempts to remove this phase by using acidic etching or highly toxic organic compounds have been reported but so far with moderate impact on device performance. Herein, a new oxidizing route to ensure efficient removal of ZnSe is presented based on treatment with a mixture of an oxidizing agent and a mineral acid followed by treatment in an aqueous Na2S solution. Three different oxidizing agents were tested: H2O2, KMnO4, and K2Cr2O7, combined with different concentrations of H2SO4. With all of these agents Se(2-) from the ZnSe surface phase is selectively oxidized to Se(0), forming an elemental Se phase, which is removed with the subsequent etching in Na2S. Using KMnO4 in a H2SO4-based medium, a large improvement on the conversion efficiency of the devices is observed, related to an improvement of all the optoelectronic parameters of the cells. Improvement of short-circuit current density (J(sc)) and series resistance is directly related to the selective etching of the ZnSe surface phase, which has a demonstrated current-blocking effect. In addition, a significant improvement of open-circuit voltage (V(oc)), shunt resistance (R(sh)), and fill factor (FF) are attributed to a passivation effect of the kesterite absorber surface resulting from the chemical processes, an effect that likely leads to a reduction of nonradiative-recombination states density and a subsequent improvement of the p-n junction.
ABSTRACT
We investigate CZTSe films by polarization dependent Raman spectroscopy. The main peaks at 170 cm(-1), and 195 cm(-1) are found to have A symmetry. The Raman signal at 170 cm(-1) is found to be composed of two modes at 168 cm(-1) and 172 cm(-1). We attribute these three Raman peaks to the three A symmetry modes predicted for kesterite ordered Cu(2)ZnSnSe(4). The main Raman peak is asymmetrically broadened towards lower energies. Possible sources of the broadening are tested through temperature and depth dependent measurements. The broadening is attributed to phonon confinement effects related to the presence of lattice defects.
ABSTRACT
A multistrategy approach to overcome the main challenges of nanoparticle-based solution-processed Cu2ZnSnSe4 thin film solar cells is presented. We developed an efficient ligand exchange strategy, using an antimony salt, to displace organic ligands from the surface of Cu2ZnSnS4 nanoparticles. An automated pulsed spray-deposition system was used to deposit the nanoparticles into homogeneous and crack-free films with controlled thickness. After annealing the film in a Se-rich atmosphere, carbon-free and crystalline Cu2ZnSnSe4 absorber layers were obtained. Not only was crystallization promoted by the complete removal of organics, but also Sb itself played a critical role. The Sb-assisted crystal growth is associated with the formation of a Sb-based compound at the grain boundaries, which locally reduces the melting point, thus promoting the film diffusion-limited crystallization.
ABSTRACT
Pentenary Cu2ZnSn(S(y)Se(1-y))4 (kesterite) photovoltaic absorbers are synthesized by a one-step annealing process from copper-poor and zinc-rich precursor metallic stacks prepared by direct-current magnetron sputtering deposition. Depending on the chalcogen source--mixtures of sulfur and selenium powders, or selenium disulfide--as well as the annealing temperature and pressure, this simple methodology permits the tuning of the absorber composition from sulfur-rich to selenium-rich in one single annealing process. The impact of the thermal treatment variables on chalcogenide incorporation is investigated. The effect of the S/(S+Se) compositional ratio on the structural and morphological properties of the as-grown films, and the optoelectronic parameters of solar cells fabricated using these absorber films is studied. Using this single-step sulfo-selenization method, pentenary kesterite-based devices with conversion efficiencies up to 4.4 % are obtained.
ABSTRACT
Improvement of the efficiency of Cu(2)ZnSnS(4) (CZTS)-based solar cells requires the development of specific procedures to remove or avoid the formation of detrimental secondary phases. The presence of these phases is favored by the Zn-rich and Cu-poor conditions that are required to obtain device-grade layers. We have developed a selective chemical etching process based on the use of hydrochloric acid solutions to remove Zn-rich secondary phases from the CZTS film surface, which are partly responsible for the deterioration of the series resistance of the cells and, as a consequence, the conversion efficiency. Using this approach, we have obtained CZTS-based devices with 5.2% efficiency, which is nearly twice that of the devices we have prepared without this etching process.
