Engineering buffer layers to improve temperature resilience of magnetic tunnel junction sensors.

Improving the thermal resilience of magnetic tunnel junctions (MTJs) broadens their applicability as sensing devices and is necessary to ensure their operation under harsh environments. In this work, we are address the impact of temperature on the degradation of the magnetic reference in field sensor stacks based on MgO-MTJs. Our study starts by simple MnIr/CoFe bilayers to gather enough insights into the role of critical morphological and magnetic parameters and their impact in the temperature dependent behavior. The exchange bias coupling field (Hex), coercive field (Hc), and blocking temperature (Tb) distribution are tuned, combining tailored growth conditions of the antiferromagnet and different buffer layer materials and stackings. This is achieved by a unique combination of ion beam deposition and magnetron sputtering, without vaccum break. Then, the work then extends beyond bilayers into more complex state-of-the-art MgO MTJ stacks as those employed in commercial sensing applications. We systematically address their characteristic fields, such as the width of the antiferromagnetic coupling plateau ΔH, and study their dependence on temperature. Although, [Ta/CuN] buffers showed higher key performance indications (e.g.Hex) at room temperature in both bilayers and MTJs, [Ta/Ru] buffers showed an overall wider ΔHup to 200 °C, more suitable to push high temperature operations. This result highlights the importance of properly design a suitable buffer layer system and addressing the complete MTJ behavior as function of temperature, to deliver the best stacking design with highest resilience to high temperature environments.

Antimicrobial profile of a dental implant abutment coating to prevent adhesion and migration of bacteria and screw loosening.

OBJECTIVE: Failure of dental implants treatment is frequently the result of bacterial colonization of implants followed by diseases like peri-implantitis. Recent studies have been made regarding the surface treatment of implants components, namely abutments that are in the interface of the living tissue with the implant. This work aimed at evaluating the antimicrobial profile of a silane-based coating with TiO2 adapted to an abutment screw, that was also developed as an anti-loosening agent, to prevent adhesion and migration of Gram + and Gram-bacteria, Staphylococcus aureus, and Escherichia coli, respectively. METHODS: Direct contact antimicrobial studies were conducted on coated and uncoated samples by resazurin fluorescent assay and cytotoxicity assessment was done via MTT indirect method on days 1 and 4. Sterilizations studies by FTIR analysis were also performed to understand the ideal balance between sterilization efficacy and coating functionality subjecting the samples to ethylene oxide, gamma irradiation, and autoclave sterilization, before antimicrobial testing. The implant system as a whole was also studied for its ability to block bacterial migration and preventing microleakage as well as an assessment of initial bacterial adhesion evaluated by scanning electron microscopy. RESULTS: Direct contact studies performed on coated samples showed a very high antimicrobial activity, while cytotoxicity assays revealed the coating to be safe and non-leachable. Sterilizations studies showed that the antimicrobial features of the coating were preserved and interchangeable regardless of the sterilization method. The implant system migration studies demonstrated that the implant system works as an efficient barrier for the studied bacteria. SIGNIFICANCE: The acquired results clearly show that it is possible to obtain a highly functional coating with obvious and marked antimicrobial features that together with an abutment that prevents bacterial migration and versatility in sterilization methodology has a very high potential in the dental implant field.

Effects of magnetic monopoles charge on the cracking reversal processes in artificial square ices.

In this paper we perform nanofabrication of square artificial spin ices with different lattice parameters, in order to investigate the roles of vertex excitation on the features of the system. In particular, the character of magnetic charge distribution asymmetry on the vertices are observed under magnetic hysteresis loop experiments. We then compare our results with simulation using an emergent Hamiltonian containing objects such as magnetic monopoles and dipoles in the vertices of the array (instead of the usual Hamiltonian based on the dipolar interactions among the magnetic nanoislands). All possible interactions between these objects are considered (monopole-monopole, monopole-dipole and dipole-dipole). Using realistic parameters we observe very good match between experiments and theory, which allow us to better understand the system dynamics in function of monopole charge intensity.

Spin transfer torque driven higher-order propagating spin waves in nano-contact magnetic tunnel junctions.

Short wavelength exchange-dominated propagating spin waves will enable magnonic devices to operate at higher frequencies and higher data transmission rates. While giant magnetoresistance (GMR)-based magnetic nanocontacts are efficient injectors of propagating spin waves, the generated wavelengths are 2.6 times the nano-contact diameter, and the electrical signal strength remains too weak for applications. Here we demonstrate nano-contact-based spin wave generation in magnetic tunnel junctions and observe large-frequency steps consistent with the hitherto ignored possibility of second- and third-order propagating spin waves with wavelengths of 120 and 74 nm, i.e., much smaller than the 150-nm nanocontact. Mutual synchronization is also observed on all three propagating modes. These higher-order propagating spin waves will enable magnonic devices to operate at much higher frequencies and greatly increase their transmission rates and spin wave propagating lengths, both proportional to the much higher group velocity.

Realization of Rectangular Artificial Spin Ice and Direct Observation of High Energy Topology.

In this work, we have constructed and experimentally investigated frustrated arrays of dipoles forming two-dimensional artificial spin ices with different lattice parameters (rectangular arrays with horizontal and vertical lattice spacings denoted by a and b respectively). Arrays with three different aspect ratios γ = a/b = [Formula: see text], [Formula: see text] and [Formula: see text] are studied. Theoretical calculations of low-energy demagnetized configurations for these same parameters are also presented. Experimental data for demagnetized samples confirm most of the theoretical results. However, the highest energy topology (doubly-charged monopoles) does not emerge in our theoretical model, while they are seen in experiments for large enough γ. Our results also insinuate that the string tension connecting two magnetic monopoles in a pair vanishes in rectangular lattices with a critical ratio γ = γ c = [Formula: see text], supporting previous theoretical predictions.

High power and low critical current density spin transfer torque nano-oscillators using MgO barriers with intermediate thickness.

Reported steady-state microwave emission in magnetic tunnel junction (MTJ)-based spin transfer torque nano-oscillators (STNOs) relies mostly on very thin insulating barriers [resulting in a resistance × area product (R × A) of ~1 Ωµm2] that can sustain large current densities and thus trigger large orbit magnetic dynamics. Apart from the low R × A requirement, the role of the tunnel barrier in the dynamics has so far been largely overlooked, in comparison to the magnetic configuration of STNOs. In this report, STNOs with an in-plane magnetized homogeneous free layer configuration are used to probe the role of the tunnel barrier in the dynamics. In this type of STNOs, the RF modes are in the GHz region with integrated matched output powers (P out ) in the range of 1-40 nW. Here, P o u t values up to 200 nW are reported using thicker insulating barriers for junctions with R × A values ranging from 7.5 to 12.5 Ωµm2, without compromising the ability to trigger self-sustained oscillations and without any noticeable degradation of the signal linewidth (Γ). Furthermore, a decrease of two orders of magnitude in the critical current density for spin transfer torque induced dynamics (J STT ) was observed, without any further change in the magnetic configuration.

Magnetic tunnel junctions with integrated thermometers for magnetothermopower measurements.

Magnetic tunnel junction (MTJ) micropillars were fabricated with integrated thermometers and a heater line (HL) for thermovoltage measurements. This novel thermometer configuration enabled a direct measurement of ΔT across the MTJ micropillar. The MTJ devices were patterned from a CoFeB/MgO/CoFeB stack, with a 1.2 nm to 1.6 nm MgO wedge across the wafer, resulting in resistance area products in the range of 0.7 kΩ · µm2 < R × A < 55 kΩ · µm2. This allowed the measurement of thermoelectric properties as a function of the tunnel barrier thickness. The thermometers showed a homogeneous heating behavior for all devices across the wafer. Combining the in-stack temperature measurements and finite element simulations the thermal profile across the MTJ structure and the thermopower were estimated with a noticeable improvement of the measurement accuracy. The studied MTJ structures showed tunneling magnetoresistance (TMR) ratios up to 125%, and tunneling magnetothermopower (TMTP) up to 35%.

Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering.

The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (10¹ Ω) and OFF (10² Ω) states during at least 104 s.

Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm.

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm(2) V(-1) s(-1). As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.

Femtosecond control of electric currents in metallic ferromagnetic heterostructures.

The idea to use not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (10(12) Hz) emission spectroscopy and exploiting the spin-orbit interaction, we demonstrate the optical generation of electric photocurrents in metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism.

A bacteriophage detection tool for viability assessment of Salmonella cells.

Salmonellosis, one of the most common food and water-borne diseases, has a major global health and economic impact. Salmonella cells present high infection rates, persistence over inauspicious conditions and the potential to preserve virulence in dormant states when cells are viable but non-culturable (VBNC). These facts are challenging for current detection methods. Culture methods lack the capacity to detect VBNC cells, while biomolecular methods (e.g. DNA- or protein-based) hardly distinguish between dead innocuous cells and their viable lethal counterparts. This work presents and validates a novel bacteriophage (phage)-based microbial detection tool to detect and assess Salmonella viability. Salmonella Enteritidis cells in a VBNC physiological state were evaluated by cell culture, flow-cytometry and epifluorescence microscopy, and further assayed with a biosensor platform. Free PVP-SE1 phages in solution showed the ability to recognize VBNC cells, with no lysis induction, in contrast to the minor recognition of heat-killed cells. This ability was confirmed for immobilized phages on gold surfaces, where the phage detection signal follows the same trend of the concentration of viable plus VBNC cells in the sample. The phage probe was then tested in a magnetoresistive biosensor platform allowing the quantitative detection and discrimination of viable and VBNC cells from dead cells, with high sensitivity. Signals arising from 3 to 4 cells per sensor were recorded. In comparison to a polyclonal antibody that does not distinguish viable from dead cells, the phage selectivity in cell recognition minimizes false-negative and false-positive results often associated with most detection methods.

Electrical ammeter based on spin-valve sensor.

The present work shows an electrical ammeter for laboratory purpose based on a magnetoresistive (MR) spin-valve (SV) sensor. The proposed ammeter measures a 10 A maximum current and offers a maximum frequency response between 150 and 800 kHz depending on the electronics whole gain. These features are due to the use of a new generation MR-SV current sensor and a conditioning electronics that compensates in frequency and temperature the sensor response. With little adjustments in the electronics and changing the position of the sensor with respect to current carrying conductor, the designed instrument is able to measure higher current levels. The work shows the proposed ammeter with its different subsystems and describes the procedure used to test the instrument. Also a discussion of the obtained experimental results is included.

Seebeck rectification enabled by intrinsic thermoelectrical coupling in magnetic tunneling junctions.

An intrinsic thermoelectric coupling effect in the linear response regime of magnetic tunneling junctions (MTJ) is reported. In the dc response, it leads to a nonlinear correction to Ohm's law. Dynamically, it enables a novel Seebeck rectification and second harmonic generation, which apply for a broad frequency range and can be magnetically controlled. A phenomenological model on the footing of the Onsager reciprocal relation and the principle of energy conservation explains very well the experimental results obtained from both dc and frequency-dependent transport measurements performed up to GHz frequencies. Our work refines previous understanding of magnetotransport and microwave rectification in MTJs. It forms a new foundation for utilizing spin caloritronics in high-frequency applications.

Quantitative biomolecular sensing station based on magnetoresistive patterned arrays.

The combination of magnetoresistive sensors and magnetic labeling of bioanalytes, which are selectively captured by their complementary antibody in the proximity of the sensor is a powerful method in order to attain truly quantitative immunological assays. In this paper we present a technical solution to exploit the existing spin valve technology to readout magnetic signals of bio-functionalized magnetic nanoparticles. The method is simple and reliable, and it is based on a discrete scan of lateral flow strips with a precise control of the contact force between sensor and sample. It is shown that the signal of the sensor is proportional to the local magnetization produced by the nanoparticles in a wide range of concentrations, and the sensitivity thresholds in both calibration samples and real immunorecognition assays of human chorionic gonadotropin hormone are well below the visual inspection limit (5.5 ng/ml). Furthermore the sample scanning approach and the reduced dimensions of the sensors provide unprecedented spatial resolution of the nanoparticle distribution across the supporting nitrocellulose strip, therefore enabling on-stick control references and multi-analyte capability.

Spintronic platforms for biomedical applications.

Since the fundamental discovery of the giant magnetoresistance many spintronic devices have been developed and implemented in our daily life (e.g. information storage and automotive industry). Lately, advances in the sensors technology (higher sensitivity, smaller size) have potentiated other applications, namely in the biological area, leading to the emergence of novel biomedical platforms. In particular the investigation of spintronics and its application to the development of magnetoresistive (MR) biomolecular and biomedical platforms are giving rise to a new class of biomedical diagnostic devices, suitable for bench top bioassays as well as point-of-care and point-of-use devices. Herein, integrated spintronic biochip platforms for diagnostic and cytometric applications, hybrid systems incorporating magnetoresistive sensors applied to neuroelectronic studies and biomedical imaging, namely magneto-encephalography and magneto-cardiography, are reviewed. Also lab-on-a-chip MR-based platforms to perform biological studies at the single molecule level are discussed. Overall the potential and main characteristics of such MR-based biomedical devices, comparing to the existing technologies while giving particular examples of targeted applications, are addressed.

Rotavírus bovino: fatores de risco, prevalência e caracterização antigênica de amostras em rebanhos leiteiros no estado de São Paulo / Rotavirus in cattle: risk factors, prevalence and antigenic characterization from dairy calves' samples in São Paulo State, Brazil

O estudo de prevalência da infecção por rotavírus em bezerros abrangeu 51 rebanhos leiteiros, escolhidos ao acaso, localizados em uma região produtora de leite do estado de São Paulo. Entre 31 de maio e 20 de outubro de 2003, foram colhidas 103 amostras de fezes de bezerros com diarreia e 308 amostras de animais sem diarreia, com idade entre um e 45 dias. As amostras foram analisadas pelas técnicas de ensaio imunoenzimático (EIE) e eletroforese em gel de poliacrilamida (PAGE). Pelo EIE foi observada prevalência de rotavírus de 21,6 por cento (11/51) nos rebanhos e 6,7 por cento (27/404) nos bezerros. Foram diagnosticados animais infectados por rotavírus tanto em bezerros diarreicos (18,4 por cento; 19/103) quanto em bezerros assintomáticos (2,7 por cento; 8/301). A maior frequência de infecção foi determinada em bezerros com idade entre um e 15 dias, sendo estabelecida uma relação inversa entre a frequência de positividade e a idade dos animais (P<0,05). Além da idade, o sistema de alimentação - fornecimento manual do leite ou bezerro com a mãe, o tipo de instalação - baias individuais ou baias coletivas - e o tamanho do rebanho -, número de matrizes foram fatores que influenciaram significativamente a frequência da infecção (P<0,05). O RNA extraído de 27 amostras pelo PAGE foi classificado em sete eletroferótipos, indicando grande diversidade genômica de rotavírus. A genotipagem das amostras positivas para rotavírus foi realizada pelo método de transcrição reversa-reação da polimerase em cadeia, destacando a presença de infecções pelos genótipos G6P[5] e G10P[11].

The study on rotavirus infection prevalence in calves was undertaken in 51 dairy cattle herds, randomly selected, in a dairy area in the state of São Paulo. One hundred and three samples of feces from calves with diarrhea and 308 samples of feces from calves free from the disease, age ranging from 1 to 45 days, were collected from May 31st to October 20th 2003. Stool samples were analyzed through immunoenzymatic assay techniques (IEA) and polyacrylamide gel electrophoresis (PAGE). Rotavirus prevalence rate of 21.6 percent (11/51) was detected by IEA in cattle herds and 6.7 percent (27/404) in calf population. Rotavirus infection was diagnosed in calves with diarrhea (18.4 percent; 19/103) and in clinically healthy calves (2.7 percent; 8/301). The highest infection frequency was found in calves aged 1 to 15 days. There is an inverse relationship between positive frequency and age of animals (P<0.05). Factors which may affect rotavirus prevalence in herds, such as type of meals (manual milk supply or calf with dame), enclosure (individual or collective pens), herd size (number of matrixes) and age have been analyzed by the chi-square test, and significantly affected infection frequency (p<0.05). RNA from 27 positive samples by PAGE were classified in seven electrophorotypes and showed the rotavirus' extensive genomic diversity. Rotavirus positive samples genotyping was undertaken through the reverse transcription-polymerase chain reaction (RT-PCR), underpinning infections by special genotypes G6P[5] and G10P[11].

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15 V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Magnetoresistive chip cytometer.

Although conventional state-of-the-art flow cytometry systems provide rapid and reliable analytical capacities, they are bulky, expensive and complex. To overcome these drawbacks modern flow cytometers have been developed with enhanced portability for on-site measurements. Unlike external fluorescent/optical detectors, magnetoresistive sensors are micro-fabricated, can be integrated within microfluidic channels, and can detect magnetically labelled cells. This work describes the real-time detection of single magnetically labelled cells with a magnetoresistive based cell cytometer. For Kg1-a cells magnetically labelled with 50 nm CD34 microbeads (Milteny) flowing through a 150 µm wide, 14 µm high microchannel, with speeds around 1 cm s(-1), bipolar signals with an average amplitude of 10-20 µV were observed corresponding to cell events. The number of cells counted by the spin valve cytometer has been compared with that obtained with a hemocytometer. Both methods agree within the respective error bars.

Versatile, high sensitivity, and automatized angular dependent vectorial Kerr magnetometer for the analysis of nanostructured materials.

Magneto-optical Kerr effect (MOKE) magnetometry is an indispensable, reliable, and one of the most widely used techniques for the characterization of nanostructured magnetic materials. Information, such as the magnitude of coercive fields or anisotropy strengths, can be readily obtained from MOKE measurements. We present a description of our state-of-the-art vectorial MOKE magnetometer, being an extremely versatile, accurate, and sensitivity unit with a low cost and comparatively simple setup. The unit includes focusing lenses and an automatized stepper motor stage for angular dependent measurements. The performance of the magnetometer is demonstrated by hysteresis loops of Co thin films displaying uniaxial anisotropy induced on growth, MnIr/CoFe structures exhibiting the so called exchange bias effect, spin valves, and microfabricated flux guides produced by optical lithography.

Nanofabrication of 30 nm devices incorporating low resistance magnetic tunnel junctions.

In this paper the electron-beam lithography conditions and the nanofabrication process are described for current-perpendicular-to-plane (CPP) pillar devices with 30 nm critical dimensions. This work combines a RAITH-150 tool with a negative e-beam resist (AR-7520) so that dense nanopillar arrays are patterned fast into large area samples. The resist dilution and coating conditions are optimized, aiming at its thickness reduction down to 80 nm. The exposure parameters are tuned for different geometries and dimensions, so that features down to 30 nm are exposed with good accuracy (+/- 1.9 nm) and reproducibility. The complete integration of these nanoelements into CPP devices involved electron beam lithography, ion milling for pattern transfer and chemical-mechanical polishing (CMP). Results on devices incorporating very low resistance-area (R x A) MTJ films deposited by Ion beam assisted deposition are shown, for MTJ stacks with R x A down to 0.8 omega x microm2. Device characterization includes electrical measurement of the pillar resistance and the transfer curves under dc magnetic fields (TMR up to 40%).