ABSTRACT
Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.
ABSTRACT
We experimentally study surface plasmon lasing in a series of metal hole arrays on a gold-semiconductor interface. The sub-wavelength holes are arranged in square arrays of which we systematically vary the lattice constant and hole size. The semiconductor medium is optically pumped and operates at telecom wavelengths (λ ~ 1.5 µm). For all 9 studied arrays, we observe surface plasmon (SP) lasing close to normal incidence, where different lasers operate in different plasmonic bands and at different wavelengths. Angle- and frequency-resolved measurements of the spontaneous emission visualizes these bands over the relevant (ω, k||) range. The observed bands are accurately described by a simple coupled-wave model, which enables us to quantify the backwards and right-angle scattering of SPs at the holes in the metal film.
ABSTRACT
Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths.