Direct Observation of the Xenon Physisorption Process in Mesopores by Combining In Situ Anomalous Small-Angle X-ray Scattering and X-ray Absorption Spectroscopy.

The morphology and structural changes of confined matter are still far from being understood. This report deals with the development of a novel in situ method based on the combination of anomalous small-angle X-ray scattering (ASAXS) and X-ray absorption near edge structure (XANES) spectroscopy to directly probe the evolution of the xenon adsorbate phase in mesoporous silicon during gas adsorption at 165 K. The interface area and size evolution of the confined xenon phase were determined via ASAXS demonstrating that filling and emptying the pores follow two distinct mechanisms. The mass density of the confined xenon was found to decrease prior to pore emptying. XANES analyses showed that Xe exists in two different states when confined in mesopores. This combination of methods provides a smart new tool for the study of nanoconfined matter for catalysis, gas, and energy storage applications.

Quantification of Nanoscale Density Fluctuations in Hydrogenated Amorphous Silicon.

The nanostructure of hydrogenated amorphous silicon (a-Si∶H) is studied by a combination of small-angle x-ray scattering (SAXS) and small-angle neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si∶H materials were deposited using a range of widely varied conditions and are representative for this class of materials. We identify two different phases that are embedded in the a-Si∶H matrix and quantified both according to their scattering cross sections. First, 1.2 nm sized voids (multivacancies with more than 10 missing atoms) which form a superlattice with 1.6 nm void-to-void distance are detected. The voids are found in concentrations as high as 6×10^{19} cm^{-3} in a-Si∶H material that is deposited at a high rate. Second, dense ordered domains (DOD) that are depleted of hydrogen with 1 nm average diameter are found. The DOD tend to form 10-15 nm sized aggregates and are largely found in all a-Si∶H materials considered here. These quantitative findings make it possible to understand the complex correlation between structure and electronic properties of a-Si∶H and directly link them to the light-induced formation of defects. Finally, a structural model is derived, which verifies theoretical predictions about the nanostructure of a-Si∶H.