1.
Appl Opt
; 37(22): 5058-62, 1998 Aug 01.
Article
in English
| MEDLINE
| ID: mdl-18285975
ABSTRACT
We report on the fabrication of a solar-UV monitoring system that uses GaN-based photodetectors. GaN photoconductors, p-n junction photodiodes, and Schottky barrier photodiodes have been fabricated and characterized as UV sensors. The best performances are obtained in Schottky photodiodes, which show a linear response, a flat responsivity of 100 mA/W, a visible rejection ratio higher than 10(3), and a noise-equivalent power of 1 nW/Hz(-1/2). Preliminary data on Al(x)Ga(1-x)N (x = 0.15, 0.22) detectors are also presented. Using GaN Schottky diodes, we fabricate and evaluate a complete solar-UV detection head.
2.
Phys Rev B Condens Matter
; 54(16): R11042-R11045, 1996 Oct 15.
Article
in English
| MEDLINE
| ID: mdl-9984981
3.
Phys Rev B Condens Matter
; 53(16): 11025-11033, 1996 Apr 15.
Article
in English
| MEDLINE
| ID: mdl-9982675
4.
Phys Rev B Condens Matter
; 53(12): 7736-7741, 1996 Mar 15.
Article
in English
| MEDLINE
| ID: mdl-9982219
5.
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7.
Phys Rev B Condens Matter
; 42(2): 1500-1503, 1990 Jul 15.
Article
in English
| MEDLINE
| ID: mdl-9995578
8.
Phys Rev B Condens Matter
; 40(8): 5892-5895, 1989 Sep 15.
Article
in English
| MEDLINE
| ID: mdl-9992650
9.
Phys Rev B Condens Matter
; 38(3): 1885-1892, 1988 Jul 15.
Article
in English
| MEDLINE
| ID: mdl-9946474