RETRACTED: Anohova et al. The Dosidicus gigas Collagen for Scaffold Preparation and Cell Cultivation: Mechanical and Physicochemical Properties, Morphology, Composition and Cell Viability. Polymers 2023, 15, 1220.

The Polymers Editorial Office retracts the article, "The Dosidicus gigas Collagen for Scaffold Preparation and Cell Cultivation: Mechanical and Physicochemical Properties, Morphology, Composition and Cell Viability" [...].

The Dosidicus gigas Collagen for Scaffold Preparation and Cell Cultivation: Mechanical and Physicochemical Properties, Morphology, Composition and Cell Viability.

Directed formation of the structure of the culture of living cells is the most important task of tissue engineering. New materials for 3D scaffolds of living tissue are critical for the mass adoption of regenerative medicine protocols. In this manuscript, we demonstrate the results of the molecular structure study of collagen from Dosidicus gigas and reveal the possibility of obtaining a thin membrane material. The collagen membrane is characterized by high flexibility and plasticity as well as mechanical strength. The technology of obtaining collagen scaffolds, as well as the results of studies of its mechanical properties, surface morphology, protein composition, and the process of cell proliferation on its surface, are shown in the given manuscript. The investigation of living tissue culture grown on the surface of a collagen scaffold by X-ray tomography on a synchrotron source made it possible to remodel the structure of the extracellular matrix. It was found that the scaffolds obtained from squid collagen are characterized by a high degree of fibril ordering and high surface roughness and provide efficient directed growth of the cell culture. The resulting material provides the formation of the extracellular matrix and is characterized by a short time to living tissue sorption.

Sublayer-Enhanced Growth of Highly Ordered Mn5Ge3 Thin Film on Si(111).

Mn5Ge3 epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth mode. This mode has been stabilized by changing the ratio of the Mn and Ge evaporation rate from the stoichiometric in the buffer layer. Highly ordered Mn5Ge3 film has two azimuthal crystallite orientations, namely Mn5Ge3 (001) [1-10] and Mn5Ge3 (001) [010] matching Si(111)[-110]. Lattice parameters derived a (7.112(1) Å) and c (5.027(1) Å) are close to the bulk values. Considering all structural data, we proposed a double buffer layer model suggesting that all layers have identical crystal structure with P63/mcm symmetry similar to Mn5Ge3, but orientation and level of Si concentration are different, which eliminates 8% lattice mismatch between Si and Mn5Ge3 film. Mn5Ge3 film on Si(111) demonstrates no difference in magnetic properties compared to other reported films. TC is about 300 K, which implies no significant excess of Mn or Si doping. It means that the buffer layer not only serves as a platform for the growth of the relaxed Mn5Ge3 film, but is also a good diffusion barrier.

Pulsed Laser Phosphorus Doping and Nanocomposite Catalysts Deposition in Forming a-MoSx/NP-Mo//n+p-Si Photocathodes for Efficient Solar Hydrogen Production.

Pulsed laser deposition of nanostructured molybdenum sulfide films creates specific nonequilibrium growth conditions, which improve the electrocatalytic properties of the films in a hydrogen evolution reaction (HER). The enhanced catalytic performance of the amorphous a-MoSx (2 ≤ x ≤ 3) matrix is due to the synergistic effect of the Mo nanoparticles (Mo-NP) formed during the laser ablation of a MoS2 target. This work looks at the possibility of employing a-MoSx/NP-Mo films (4 and 20 nm thickness) to produce hydrogen by photo-stimulated HER using a p-Si cathode. A simple technique of pulsed laser p-Si doping with phosphorus was used to form an n+p-junction. Investigations of the energy band arrangement at the interface between a-MoSx/NP-Mo and n+-Si showed that the photo-HER on an a-MoSx/NP-Mo//n+p-Si photocathode with a 20 nm thick catalytic film proceeded according to a Z-scheme. The thickness of interfacial SiOy(P) nanolayer varied little in photo-HER without interfering with the effective electric current across the interface. The a-MoSx/NP-Mo//n+p-Si photocathode showed good long-term durability; its onset potential was 390 mV and photocurrent density was at 0 V was 28.7 mA/cm2. The a-MoSx/NP-Mo//n+p-Si photocathodes and their laser-based production technique offer a promising pathway toward sustainable solar hydrogen production.

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x Hybrid Structures: Effect on Magnetic and Electric Transport Properties.

Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

Performance and Mechanism of Photoelectrocatalytic Activity of MoSx/WO3 Heterostructures Obtained by Reactive Pulsed Laser Deposition for Water Splitting.

This work studies the factors that affect the efficiency of the photoelectrochemical hydrogen evolution reaction (HER) using MoSx/WO3 nano-heterostructures obtained by reactive pulsed laser deposition (RPLD) on glass substrates covered with fluorinated tin oxide (FTO). Another focus of the research is the potential of MoSx nanofilms as a precursor for MoOz(S) nanofilms, which enhance the efficiency of the photo-activated oxygen evolution reaction (OER) using the MoOz(S)/WO3/FTO heterostructures. The nanocrystalline WO3 film was created by laser ablation of a W target in dry air at a substrate temperature of 420 °C. Amorphous MoSx nanofilms (2 ≤ x ≤ 12) were obtained by laser ablation of an Mo target in H2S gas of varied pressure at room temperature of the substrate. Studies of the energy band structures showed that for all MoSx/WO3/FTO samples, photo-activated HER in an acid solution proceeded through the Z-scheme. The highest photoelectrochemical HER efficiency (a photocurrent density ~1 mA/cm2 at a potential of ~0 V under Xe lamp illumination (~100 mW/cm2)) was found for porous MoS4.5 films containing the highest concentration of catalytically active sites attributed to S ligands. During the anodic posttreatment of porous MoSx nanofilms, MoOz(S) films with a narrow energy band gap were formed. The highest OER efficiency (a photocurrent density ~5.3 mA/cm2 at 1.6 V) was detected for MoOz(S)/WO3/FTO photoanodes that were prepared by posttreatment of the MoSx~3.2 precursor. The MoOz(S) film contributed to the effective photogeneration of electron-hole pairs that was followed by the transport of photoelectrons from MoOz(S) into the WO3 film and the effective participation of holes possessing strong oxidation ability in the OER on the surface of the MoOz(S) film.

Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications.

We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor-liquid-solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu ≈ 60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I-V diode characteristics. Our approach can become an important new tool in the design of novel electronic components.