Your browser doesn't support javascript.
loading
Show: 20 | 50 | 100
Results 1 - 8 de 8
Filter
Add more filters











Database
Language
Publication year range
1.
Materials (Basel) ; 15(19)2022 Sep 27.
Article in English | MEDLINE | ID: mdl-36234038

ABSTRACT

High electrical and thermal contact resistances can ruin a thermoelectric device's performance, and thus, the use of effective diffusion barriers and optimization of joining methods are crucial to implement them. In this work, the use of carbon as a Cu11Mn1Sb4S13 tetrahedrite diffusion barrier, and the effectiveness of different fixation techniques for the preparation of tetrahedrite/copper electrical contacts were investigated. Contacts were prepared using as jointing materials Ni and Ag conductive paints and resins, and a Zn-5wt% Al solder. Manual, cold- and hot-pressing fixation techniques were explored. The contact resistance was measured using a custom-made system based on the three points pulsed-current method. The legs interfaces (Cu/graphite/tetrahedrite) were investigated by optical and scanning electron microscopies, complemented with energy-dispersive X-ray spectroscopy, and X-ray diffraction. No interfacial phases were formed between the graphite and the tetrahedrite or Cu, pointing to graphite as a good diffusion barrier. Ag water-based paint was the best jointing material, but the use of hot pressing without jointing materials proves to be the most reliable technique, presenting the lowest contact resistance values. Computer simulations using the COMSOL software were performed to complement this study, indicating that high contact resistances strongly reduce the power output of thermoelectric devices.

2.
Materials (Basel) ; 14(19)2021 Sep 25.
Article in English | MEDLINE | ID: mdl-34639964

ABSTRACT

Nanograined nuclear materials are expected to have a better performance as spallation targets and nuclear fuels than conventional materials, but many basic properties of these materials are still unknown. The present work aims to contribute to their better understanding by studying the effect of grain size on the melting and solid-solid transitions of nanograined UC2-y. We laser-heated 4 nm-10 nm grain size samples with UC2-y as the main phase (but containing graphite and UO2 as impurities) under inert gas to temperatures above 3000 K, and their behavior was studied by thermal radiance spectroscopy. The UC2-y solidification point (2713(30) K) and α-UC2 to ß-UC2 solid-solid transition temperature (2038(10) K) were observed to remain unchanged when compared to bulk crystalline materials with micrometer grain sizes. After melting, the composite grain size persisted at the nanoscale, from around 10 nm to 20 nm, pointing to an effective role of carbon in preventing the rapid diffusion of uranium and grain growth.

3.
Nanomaterials (Basel) ; 10(12)2020 Dec 09.
Article in English | MEDLINE | ID: mdl-33316919

ABSTRACT

This paper presents an experimental study about the preparation, by electrospinning, of uranium carbide fibers with nanometric grain size. Viscous solutions of cellulose acetate and uranyl salts (acetate, acetylacetonate, and formate) on acetic acid and 2,4-pentanedione, adjusted to three different polymer concentrations, 10, 12.5, and 15 weight %, were used for electrospinning. Good quality precursor fibers were obtained from solutions with a 15% cellulose acetate concentration, the best ones being produced from the uranyl acetate solution. As-spun precursor fibers were then decomposed by slow heating until 823 K under argon, resulting in a mixture of nano-grained UO2 and C fibers. A last carboreduction was then carried out under vacuum at 2073 K for 2 h. The final material displayed UC2-y as the major phase, with grain sizes in the 4 nm-10 nm range. UO2+x was still present in moderate concentrations (~30 vol.%). This is due to uncomplete carboreduction that can be explained by the fiber morphology, limiting the effective contact between C and UO2 grains.

4.
Dalton Trans ; 47(37): 12933-12943, 2018 Oct 07.
Article in English | MEDLINE | ID: mdl-30132767

ABSTRACT

Investigation of the system Th-Ni-B prompted a novel ternary compound ThNi12B6. X-ray structure analysis of single crystals obtained by the mechanical fragmentation of an as-cast sample revealed a fully ordered CeNi12B6-type structure (space group Cmc21, no. 36; a = 0.95638(1) nm, b = 0.73852(1) nm, c = 1.10195(1) nm; RF2 = 0.0305). Density functional theory (DFT) calculations have been performed comprising heat of formation, electronic band structure and density of states, Fermi surface via Wannier functions, phonon band structure and density of states, phonon and electronic contributions to specific heat and elastic constants Cij. Comparing the parameters evaluated from DFT with the experimental data, an overall satisfactory agreement has been achieved. Measurements of electrical resistivity, magnetic susceptibility and specific heat manifest a Pauli paramagnetic, metallic behaviour for ThNi12B6 without any anomalies, in close match with the isotypic homologue LaNi12B6. Static and dynamic hardness data show rather high values; Young's modulus is in the range of 240 GPa. The Debye temperature, θD = 490 K, gained via elastic constants, is slightly higher than the values extracted from specific heat or electrical resistivity data. A rather low coefficient of thermal expansion, α = 5.5 × 10-6 K-1, was derived from the temperature dependent length change.

5.
Inorg Chem ; 57(2): 754-767, 2018 Jan 16.
Article in English | MEDLINE | ID: mdl-29266938

ABSTRACT

Recrystallization of amorphous compounds can lead to the stabilization of metastable crystalline phases, which offers an interesting way to unveil novel binary or ternary compounds and control the transport properties of the obtained glass ceramics. Here, we report on a systematic study of the Cu-As-Te glassy system and show that under specific synthesis conditions using the spark-plasma-sintering technique, the α-As2Te3 and ß-As2Te3 binary phases and the previously unreported AsTe3 phase can be selectively crystallized within an amorphous matrix. The microstructures and transport properties of three different glass ceramics, each of them containing one of these phases with roughly the same crystalline fraction (∼30% in volume), were investigated in detail by means of X-ray diffraction, scanning electron microscopy, neutron thermodiffraction, Raman scattering (experimental and lattice-dynamics calculations), and transport-property measurements. The physical properties of the glass ceramics are compared with those of both the parent glasses and the pure crystalline phases that could be successfully synthesized. SEM images coupled with Raman spectroscopy evidence a "coast-to-island" or dendriticlike microstructure with microsized crystallites. The presence of the crystallized phase results in a significant decrease in the electrical resistivity while maintaining the thermal conductivity to low values. This study demonstrates that new compounds with interesting transport properties can be obtained by recrystallization, which in turn provides a tuning parameter for the transport properties of the parent glasses.

6.
Inorg Chem ; 56(4): 2248-2257, 2017 Feb 20.
Article in English | MEDLINE | ID: mdl-28177618

ABSTRACT

We report on the influence of Se substitution on the electronic band structure and thermoelectric properties (5-523 K) of the solid solution α-As2Te3-xSex (0 ≤ x ≤ 1.5). All of the polycrystalline compounds α-As2Te3-xSex crystallize isostructurally in the monoclinic space group C2/m (No. 12, Z = 4). Regardless of the Se content, chemical analyses performed by scanning electron microscopy and electron probe microanalysis indicate a good chemical homogeneity, with only minute amounts of secondary phases for some compositions. In agreement with electronic band structure calculations, neutron powder diffraction suggests that Se does not randomly substitute for Te but exhibits a site preference. These theoretical calculations further predict a monotonic increase in the band gap energy with the Se content, which is confirmed experimentally by absorption spectroscopy measurements. Increasing x up to x = 1.5 leaves unchanged both the p-type character and semiconducting nature of α-As2Te3. The electrical resistivity and thermopower gradually increase with x as a result of the progressive increase in the band gap energy. Despite the fact that α-As2Te3 exhibits very low lattice thermal conductivity κL, the substitution of Se for Te further lowers κL to 0.35 W m-1 K-1 at 300 K. The compositional dependence of the lattice thermal conductivity closely follows classical models of phonon alloy scattering, indicating that this decrease is due to enhanced point-defect scattering.

7.
Inorg Chem ; 54(20): 9936-47, 2015 Oct 19.
Article in English | MEDLINE | ID: mdl-26418840

ABSTRACT

Metastable ß-As2Te3 (R3̅m, a = 4.047 Å and c = 29.492 Å at 300 K) is isostructural to layered Bi2Te3 and is known for similarly displaying good thermoelectric properties around 400 K. Crystallizing glassy-As2Te3 leads to multiphase samples, while ß-As2Te3 could indeed be synthesized with good phase purity (97%) by melt quenching. As expected, ß-As2Te3 reconstructively transforms into stable α-As2Te3 (C2/m, a = 14.337 Å, b = 4.015 Å, c = 9.887 Å, and ß = 95.06°) at 480 K. This ß â†’ α transformation can be seen as the displacement of part of the As atoms from their As2Te3 layers into the van der Waals bonding interspace. Upon cooling, ß-As2Te3 displacively transforms in two steps below T(S1) = 205-210 K and T(S2) = 193-197 K into a new ß'-As2Te3 allotrope. These reversible and first-order phase transitions give rise to anomalies in the resistance and in the calorimetry measurements. The new monoclinic ß'-As2Te3 crystal structure (P2(1)/m, a = 6.982 Å, b = 16.187 Å, c = 10.232 Å, ß = 103.46° at 20 K) was solved from Rietveld refinements of X-ray and neutron powder patterns collected at low temperatures. These analyses showed that the distortion undergone by ß-As2Te3 is accompanied by a 4-fold modulation along its b axis. In agreement with our experimental results, electronic structure calculations indicate that all three structures are semiconducting with the α-phase being the most stable one and the ß'-phase being more stable than the ß-phase. These calculations also confirm the occurrence of a van der Waals interspace between covalently bonded As2Te3 layers in all three structures.

8.
Microsc Microanal ; 19(5): 1204-10, 2013 Oct.
Article in English | MEDLINE | ID: mdl-24040993

ABSTRACT

The UFeB4 phase present in different alloys of the B-Fe-U system was studied by powder X-ray diffraction (PXRD) and scanning electron microscopy complemented with energy-dispersive spectroscopy and electron backscattered diffraction (EBSD). The PXRD data showed that the ternary compound crystallized adopting essentially the YCrB4-type structure. However, microstructural observations revealed that under high undercooling conditions the UFeB4 phase exhibits a random distribution of defects parallel to, which are consistently associated with intense higher-order Laue zone rings in EBSD patterns. Indexation of the EBSD patterns showed that the defective structure is compatible with an intergrowth of YCrB4- and ThMoB4-type layers according to the (010)(YCrB4)//(110)(ThMoB4) and [001]YCrB4//[001](ThMoB4) orientation relation previously reported for an analogous compound. Magnetic studies indicated that the annealed UFeB4 compound has a paramagnetic behavior in the 2-300 K temperature range.

SELECTION OF CITATIONS
SEARCH DETAIL