ABSTRACT
The present study demonstrates that precursor passivation is an effective approach for improving the crystallization process and controlling the detrimental defect density in high-efficiency Cu2ZnSn(S,Se)4 (CZTSSe) thin films. It is achieved by applying the atomic layer deposition (ALD) of the tin oxide (ALD-SnO2) capping layer onto the precursor (Cu-Zn-Sn) thin films. The ALD-SnO2 capping layer was observed to facilitate the homogeneous growth of crystalline grains and mitigate defects prior to sulfo-selenization in CZTSSe thin films. Particularly, the CuZn and SnZn defects and deep defects associated with Sn were effectively mitigated due to the reduction of Sn2+ and the increase in Sn4+ levels in the kesterite CZTSSe film after introducing ALD-SnO2 on the precursor films. Subsequently, devices integrating the ALD-SnO2 layer exhibited significantly reduced recombination and efficient charge transport at the heterojunction interface and within the bulk CZTSSe absorber bulk properties. Finally, the CZTSSe device showed improved power conversion efficiency (PCE) from 8.46% to 10.1%. The incorporation of ALD-SnO2 revealed reduced defect sites, grain boundaries, and surface roughness, improving the performance. This study offers a systematic examination of the correlation between the incorporation of the ALD-SnO2 layer and the improved PCE of CZTSSe thin film solar cells (TFSCs), in addition to innovative approaches for improving absorber quality and defect control to advance the performance of kesterite CZTSSe devices.
ABSTRACT
Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.
ABSTRACT
SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.
ABSTRACT
In this study, we present a process to deposit cadmium sulfide (CdS) thin film on glass substrate using in-house made CdS sputter target deposited by RF (radio frequency) magnetron sputtering. The bandgap of CdS film was about 2.4 eV estimated using tauc plot. Structural analysis was done using XRD and highest peak is at (101) and two other small peaks at (100) and (110) confirm CdS phase. Raman analysis was done for further confirmation of phases present in CdS film where peaks at 299.97 cm-1 and 599.8 cm-1 showed phase pure CdS film. The sputtering method used for CdS thin film preparation is an industrially viable technique and can be used for in line mass production.
ABSTRACT
CZTS is a compound semiconductor made from elements which are plainly available and nonpoisonous having favorable optoelectronic properties for thin film solar cell (TFSC) applications. In this study, Cu-poor CZTS thin film was fabricated on soda lime glass (SLG)/Mo-deposited substrate using cosputtering followed by post sulfurization in H2S atmosphere. Local electrical transport study was carried out by using conductive atomic force microscopy (C-AFM) for small bias voltage (100 mV). Here we observed that most of the dark current (Idark) flow through grain boundaries (GBs) than grain interiors. The positive high current about 3.4 nA and sharp C-AFM signal at the GBs, dips to the zero (0) value at the grain interior. Local surface potential (Vsurface) study was carried out using kelvin probe force microscopy (KPFM), which showed that the positive Vsurface potential about 175 mV in the vicinity of GBs in a Cu-poor CZTS sample. On the basis of these results we inferred a potential landscape (VL) around the GBs. All result shows that due to variation in elemental composition which creates Cu-deficit or CuZn anti site defects at GBs, leads reduced effective band gap (Eeff) than the bulk towards grain inner to GBs.[-2pt].