Unveiling the Origin of Fast Hydride Ion Diffusion at Grain Boundaries in Nanocrystalline TiN Membranes.

Nanocrystalline titanium nitride (TiN) has been determined to be a promising alternative to noble metal palladium (Pd) for fabricating base membranes for the energy-efficient production of pure hydrogen. However, the mechanism of transport of hydrogen through a TiN membrane remains unclear. In this study, we established an atomistic model of the transport of grain boundary hydride ions through such a membrane. High-resolution transmission electron microscopy and X-ray reflectivity confirmed that a nanocrystalline TiN1.0 membrane with a (100) preferred growth orientation retained about 4 Å-wide interfacial spaces along its grain boundaries. First-principles calculations based on the density functional theory showed that these grain boundaries allowed the diffusion of interfacial hydride ion defects with very small activation barriers (<12 kJ mol-1). This was substantiated by the experiment. In addition, the narrow boundary produced a sieving effect, resulting in a selective H permeation. Both the experimental and theoretical results confirmed that the granular microstructures with the 4 Å-wide interlayer enabled the transition metal nitride to exhibit pronounced hydrogen permeability.

Controlling Dielectric Film Defects to Increase the Breakdown Voltage of Conductive Polymer Solid Capacitors.

Aluminum solid polymer capacitors are promising devices for the increased demand for power electronics applications. Nonetheless, the low breakdown voltage of commercially available catalysts (∼100 V) limits their applications. In this study, a hydroxide-film-covered high-purity aluminum was anodized at 700 V in boric acid at 85 °C, and the effect of a second hot water immersion (posthydration treatment) after anodizing on the breakdown voltage was studied as a possible future treatment to enhance the withstand voltages of solid electrolytic capacitors. The dielectric breakdown voltage of the anodized aluminum with a PEDOT:PSS coating was ∼500 V, being ∼200 V less than the anodizing voltage; however, the dielectric breakdown voltage was increased above 700 V by introducing the posthydration treatment due to the formation of a nanovoid layer above the dielectric alumina film. Our research suggests that the highly dispersed nanovoids incorporated with PEDOT:PSS avoid the current concentration at some local regions, effectively increasing the dielectric breakdown voltage. The posthydration treatment increased the leakage current by introducing physical defects in the dielectric film. However, the leakage current was reduced by a voltage sweep below the breakdown voltage after the PEDOT:PSS coating or a second anodizing process before the coating, keeping the breakdown voltage above 600 V. A promising processing route to obtain aluminum solid capacitors with high withstand voltage (600 V) found in our research is, first, dipping in hot water; second, anodizing at 700 V; then a second hot water treatment; and a second anodizing at 400 V, which keeps the capacitance invariable with a breakdown voltage enhanced.