ABSTRACT
2D semi-metallic hafnium ditelluride material is used in several applications such as solar steam generation, gas sensing, and catalysis owing to its strong near-infrared absorbance, high sensitivity, and distinctive electronic structure. The zero-bandgap characteristics, along with the thermal and dynamic stability of 2D-HfTe2, make it a desirable choice for developing long-wavelength-range photonics devices. Herein, the HfTe2 -nanosheets are prepared using the liquid-phase exfoliation method, and their superior nonlinear optical properties are demonstrated by the obtained modulation depth of 11.9% (800 nm) and 6.35% (1560 nm), respectively. In addition, the observed transition from saturable to reverse saturable absorption indicates adaptability of the prepared material in nonlinear optics. By utilizing a side polished fiber-based HfTe2 -saturable absorber (SA) inside an Er-doped fiber laser cavity, a mode-locked laser with 724 fs pulse width and 56.63 dB signal-to-noise ratio (SNR) is realized for the first time. The generated laser with this SA has the second lowest mode-locking pump threshold (18.35 mW), among the other 2D material based-SAs, thus paving the way for future laser development with improved efficiency and reduced thermal impact. Finally, employing this HfTe2 -SA, a highly stable single-frequency fiber laser (SNR ≈ 74.56 dB; linewidth ≈ 1.268 kHz) is generated for the first time, indicating its promising ultranarrow photonic application.
ABSTRACT
The nonlinear optical (NLO) properties of two-dimensional (2D) materials are fascinating for fundamental physics and optoelectronic device development. However, relatively few investigations have been conducted to establish the combined NLO activities of a 2D material. Herein, a study of numerous NLO properties of 2D gallium sulfide (GaS), including second-harmonic generation (SHG), two-photon excited fluorescence (TPEF), and NLO absorption are presented. The layer-dependent SHG response of 2D GaS identifies the noncentrosymmetric nature of the odd layers, and the second-order susceptibility (χ2) value of 47.98 pm/V (three-layers of GaS) indicates the superior efficiency of the SHG signal. In addition, structural deformation induces the symmetry breaking and facilitates the SHG in the bulk samples, whereas a possible efficient symmetry breaking in the liquid-phase exfoliated samples results in an enhancement of the SHG signal, providing prospective fields of investigation for researchers. The generation of TPEF from 800 to 860 nm depicts the two-photon absorption characteristics of 2D GaS material. Moreover, the saturable absorption characteristics of 2D GaS are realized from the largest nonlinear absorption coefficient (ß) of -9.3 × 103, -91.0 × 103, and -6.05 × 103 cm/GW and giant modulation depths (Ts) of 24.4%, 35.3%, and 29.1% at three different wavelengths of 800, 1066, and 1560 nm, respectively. Hence, such NLO activities indicate that 2D GaS material can facilitate in the technical advancements of future nonlinear optoelectronic devices.