Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y2O3 Gate Dielectric.

High-k Y2O3 thin films were investigated as the gate dielectric for amorphous indium zinc tin oxide (IZTO) thin-film transistors (TFTs). Y2O3 gate dielectric was deposited by radio frequency magnetron sputtering (RF-MS) under various working pressures and annealing conditions. Amorphous IZTO TFTs with SiO2 as the gate dielectric showed a high field-effect mobility (µFE) of 19.6 cm²/Vs, threshold voltage (Vth) of 0.75 V, on/off current ratio (Ion/Ioff) of 2.0×106, and subthreshold swing (SS) value of 1.01 V/dec. The IZTO TFT sample device fabricated with the Y2O3 gate dielectric showed an improved subthreshold swing value compared to that of the IZTO TFT device with SiO2 gate dielectric. The IZTO TFT device using the Y2O3 gate dielectric deposited at a working pressure of 5 mtorr and annealed at 400 °C in 6 sccm O2 for 1 hour showed a high µFE of 51.8 cm²/Vs, Vth of -0.26 V, Ion/Ioff of 6.0×10³, and SS value of 0.19 V/dec. With the application of a Y2O3 gate dielectric, the Vth shift improved under a positive bias stress (PBS) but was relatively unaffected by negative bias stress (NBS). These shifts were attributed to charge traps within the gate dielectric and/or interfaces between the channel and gate dielectric layer.

Effect of Al2O3 Dot Patterning on CZTSSe Solar Cell Characteristics.

In this study, a 5-nm thick Al2O3 layer was patterned onto the Mo electrode in the form of a dot to produce a local rear contact, which looked at the effects of this contact structure on Cu2ZnSn(S1-xSex)4 (CZTSSe) growth and solar cell devices. Mo was partially exposed through open holes having a square dot shape, and the closed-ratios of Al2O3 passivated areas were 56%, 75%, and 84%. The process of synthesizing CZTSSe is the same as that of the previous process showing 12.62% efficiency. When the 5-nm-Al2O3 dot patterning was applied to the Mo surface, we observed that the MoSSe formation was well suppressed under the area coated of 5-nm-Al2O3 film. The self-alignment phenomenon was observed in the back-contact area. CZTSSe was easily formed in the Mo-exposed area, while voids were formed near the Al2O3-coated area. The efficiency of the CZTSSe solar cell decreased when the Al2O3 passivated area increased. The exposure area and pitch of Mo, the collecting path of the hole, and the supplying path of Na seemed to be related to efficiency. Thus, it was suggested that the optimization of the Mo-exposed pattern and the additional Na supply are necessary to develop the optimum self-aligned CZTSSe light absorber.

Growth and NO2-Sensing Properties of Biaxial p-SnO/n-ZnO Heterostructured Nanowires.

Biaxial p-SnO/n-ZnO heterostructured nanowires (average length of 10 µm) were grown onto a glass substrate by thermal evaporation in vacuum. These nanowires had spherical ball tips, and the size of the SnO part increased gradually from the top to the bottom of the nanowire, but the corresponding size of ZnO varied slightly. The Sn-Zn alloy formed in the tips resulted in determined as the catalyst of the growth of the ZnO nanowires. The growth process of the p-SnO/n-ZnO biaxial nanowires is discussed based on vapor-liquid-solid (VLS) based on the subsequent growth process: the VLS catalytic growth of the ZnO nanowire and subsequent epitaxial SnO growth on the sidewall of the pregrown ZnO nanowire. An epitaxial relationship, (001)SnO//(110)ZnO and [110]SnO//[002]ZnO, was observed in the biaxial p-SnO/n-ZnO heterostructured nanowires. The gas-sensing properties of the as-synthesized p-SnO/n-ZnO nanowires were investigated. The results show that the device exhibit a good performance to the ppb-level NO2 at room temperature (25 °C) without light illumination. The detection limit of the p-SnO/n-ZnO sensor to NO2 is 50 ppb. Moreover, the NO2-sensing properties of the p-SnO/n-ZnO device were investigated under various relative humidity. Finally, the NO2-sensing mechanism of the p-SnO/n-ZnO nanowires was proposed and discussed.

Sleep Disturbance in Patients With Lumbar Spinal Stenosis: Association With Disability and Quality of Life.

STUDY DESIGN: This was a cross-sectional cohort study. OBJECTIVE: The objective of this study was to identify the prevalence of sleep disturbance in patients with symptomatic lumbar spinal stenosis (LSS) and to establish the relationship between sleep disturbance and both functional disability and health-related quality of life in patients with symptomatic LSS. SUMMARY OF BACKGROUND DATA: Despite the possible association between LSS and poor sleep quality, there has been no study regarding the relationship between LSS and sleep disturbance. MATERIALS AND METHODS: A total of 148 patients with LSS were divided into the poor sleeper and nonpoor sleeper groups according to Global Pittsburgh Sleep Quality Index (PSQI) score. Demographic data, Visual Analog Scale (VAS) score for back and leg pain, Oswestry Disability Index (ODI), and EuroQol 5-dimension questionnaire (EQ-5D) were compared between both groups. Multiple regression analysis was performed with ODI or ODI without sleep component as the dependent variable and age, sex, PSQI, VAS for back pain, VAS for leg pain as independent variables. RESULTS: Of the 148 patients who participated in this study, 54 (36.5%) and 94 (63.5%) patients were classified into nonpoor sleeper and poor sleeper groups. Although there were no differences in demographic data or VAS for back or leg pain between the nonpoor sleeper and poor sleeper groups, poor sleepers demonstrated significantly higher ODI scores, and lower EQ-5D than nonpoor sleepers (P=0.003 and 0.004, respectively). There were significant correlations between the global PSQI score and both the ODI score and EQ-5D. Although the surgical treatment group showed significantly higher VAS for back pain, VAS for leg pain, ODI scores, and lower EQ-5D than the conservative treatment group, the ratio of poor to nonpoor sleepers was not different between both groups (P=0.733). In the surgical treatment group, the percent of poor sleeper decreased from 65.1% to 47.6% 6 months after surgery (P<0.001). CONCLUSIONS: The present study demonstrated that 'poor sleep quality' is a prevalent condition (63.5%) in patients with symptomatic LSS. Poor sleep quality has an adverse effect on functional disability and health-related quality of life in symptomatic LSS patients.

Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.

Amorphous oxide semiconductors (AOS) have been studied extensively for the past decade as a possible alternative to polysilicon thin film transistors (TFTs). One such example is amorphous InZnSnO (IZTO), which was used in this study as an active channel layer for TFTs. A 30 nm-thick IZTO film was deposited using RF magnetron sputtering with various oxygen partial pressures, followed by annealing treatment in air at 350 °C. The resulting films showed good optical properties with high transparency of >85% in the visible spectrum, which is important for realizing transparent devices. The amorphous IZTO TFT device showed good performance with a field-effect mobility (µFE) of 29.1 cm²/Vs, threshold voltage (VT) of 0.70 V, on/off current ratio (Ion/Ioff) of ~108, and subthreshold swing (SS) value of 0.12 V/dec. Oxygen incorporation during deposition of the channel layer affected the overall electrical properties of the TFTs, which is associated with the change of interface trap density.

Biportal endoscopic versus microscopic lumbar decompressive laminectomy in patients with spinal stenosis: a randomized controlled trial.

BACKGROUND CONTEXT: Biportal endoscopic decompressive laminectomy is a widely performed procedure and shows acceptable clinical outcomes. However, the evidence regarding the advantages of biportal endoscopic surgery is weak, a randomized controlled trial is therefore warranted. PURPOSE: To compare the clinical efficacies of biportal endoscopic and microscopic decompressive laminectomy in patients with lumbar spinal stenosis. STUDY DESIGN: Randomized controlled trial. PATIENT SAMPLE: Sixty-four participants suffering from low back and leg pain with single-level lumbar spinal stenosis who required decompressive laminectomy. OUTCOME MEASURES: Outcomes were assessed with the use of patient-reported outcome measures, visual analog scale (VAS) score for low back and lower extremity radiating pain, Oswestry disability index (ODI), European Quality of Life-5 Dimensions (EQ-5D) score, and painDETECT for neuropathic pain. Surgery-related outcomes including operation time, length of hospital stay, postoperative drainage, and serum creatine phosphokinase were evaluated. Perioperative (<30 days) and late (1-12 months) complications were also noted. METHODS: All participants were randomly assigned in a 1:1 ratio to undergo biportal endoscopic or microscopic decompressive laminectomy. The primary outcome was the ODI score at 12 months after surgery based on a modified intention-to-treat strategy. The secondary outcomes included VAS score for low back and lower extremity radiating pain, ODI scores, EQ-5D score, and painDETECT score. There were no sources of funding and no conflicts of interest associated with this study. RESULTS: There was no significant difference between groups in the mean ODI score at 12 months after surgery (30 in the microscopy vs. 29 in the biportal endoscopy group, p=.635). There were also no significant differences in low back and lower extremity pain VAS scores, ODI, EQ-5D scores, and painDETECT scores at the 3-, 6-, or 12-month follow-up. Operation time, length of hospital stay, serum creatine phosphokinase, and perioperative complications, such as durotomies and symptomatic hematoma, showed no significant differences between the groups; however, one participant underwent additional revision surgery 9 months after the index surgery in the microscopy group. CONCLUSIONS: Despite the study design limitation of relatively short duration of follow-up, this trial suggests that biportal endoscopic decompressive laminectomy is an alternative to and offers similar clinical outcomes as microscopic open surgery in patients with symptomatic lumbar spinal stenosis.

Self-Alignment of Bottom CZTSSe by Patterning of an Al2O3 Intermediate Layer.

When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al2O3-patterned Mo substrate. The CZTSSe in the lower part self-aligns on the Mo-exposed area, while the voids self-align on the Al2O3-coated area. The origin of the self-alignment is expected to be the difference in bonding characteristics between liquid Sn and the metal or oxide surface, e.g., Al2O3. Good wettability generally forms between nonreactive liquid metals and metal surfaces due to the strong metallic bonding. By contrast, poor wettability generally forms between nonreactive liquid metals and oxide surfaces due to the weak van der Waals bonding between the liquid metal and the oxide layer. When the patterning was added, the device efficiency tended to decrease from 8.6% to 10.5%.

Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells.

We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.

Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.

Ternary oxide thin films in the In2O3-ZnO-SnO2 system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In-Zn-Sn-O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an n++ Si substrate. Films from a sintered ceramic target with a nominal chemical composition of In:Zn:Sn = 40:50:10 at.% were prepared with thicknesses ranging from 15 nm to 150 nm, which was followed by annealing at 350 °C for 30 minutes in air. Subsequently, a bilayer Cu/Ti metal contact was deposited as the source/drain electrodes on the top surface through a shadow mask using an e-beam evaporator. The thickness of the active channel layer greatly influenced the characteristics of the oxide thin film transistors. The best transistor characteristics were observed from the test device with a channel thickness of 30 nm and a high on/off current ratio of approximately 108, high field effect mobility of 25 cm²/Vs, low threshold voltage of -0.1 V, and very small subthreshold swing of 0.14 V/dec.

Validation and cross-cultural adaptation of the Korean version of the Core Outcome Measures Index in patients with degenerative lumbar disease.

PURPOSE: To translate and cross-culturally adapt the Core Outcome Measures Index (COMI) into the Korean language and to test the psychometric properties of the Korean COMI in patients with degenerative lumbar spine diseases. METHODS: A cross-cultural adaptation of the COMI into Korean was carried out using established guidelines. A total of 117 patients with lumbar spinal diseases were recruited from the spinal center of a tertiary care teaching institution and completed a baseline questionnaire including the newly translated COMI, the visual analog scale for back pain and for leg pain, the Oswestry Disability Index (ODI), and the EuroQOL-5 dimensions (EQ-5D). Within 2 weeks after the first assessment, 83 (71%) completed a second COMI questionnaire and a transition question (no change, slight change, moderate change, a lot of change) by phone to assess reproducibility. RESULTS: COMI summary scores displayed 1.7% floor effects and no ceiling effect. For construct validity, each COMI item and COMI summary score well correlated with its corresponding reference questionnaire. Therefore, the predefined hypotheses for the construct validities of each COMI item (ρ > 0.4 with the corresponding questionnaire) and the COMI summary score (ρ > 0.6 with both ODI and EQ-5D) were confirmed. Intraclass correlation coefficients of each COMI item and summary score ranged from 0.93 to 0.98. Therefore, the hypothesis for reliability (ICC > 0.8) was confirmed. CONCLUSIONS: The present study highlights that the Korean version of the COMI is a reliable and valid outcome tool for use in Korean-speaking patients with degenerative lumbar spinal disease. These slides can be retrieved under Electronic Supplementary Material.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

The significance of frailty in the relationship between socioeconomic status and health-related quality of life in the Korean community-dwelling elderly population: mediation analysis with bootstrapping.

PURPOSE: Firstly, to investigate the prevalence of frailty and impact on health-related quality of life (HRQOL) in a Korean community-dwelling elderly population using the Fried frailty criteria; secondly, to investigate the associations among frailty, socioeconomic status (SES), and HRQOL of the Korean community-based population; and thirdly, to analyze the relationship between education, income, and frailty. METHODS: Nine hundred and sixty-four apparently heathy subjects from the Korean community-based population were enrolled in this prospective cross-sectional study. Using self-reported questionnaires, demographic data, SES, and HRQOL were evaluated. Frailty status was determined according to the Fried frailty criteria. After adjustment of covariates including age, sex, and BMI, multivariate linear regression analyses were conducted to assess each component of the proposed mediation models, and mediation was also verified by the bootstrapping technique. RESULTS: Among the 964 participants, 530 (55.0%), 399 (41.4%), and 35 (3.6%) participants were classified into the robust, pre-frailty, and frailty group, respectively. The frail group demonstrated significantly lower HRQOL. Participants with lower income or education level had significantly higher chances of being frail. Frailty acted as a mediator in this association between low SES (education and income) and low HRQOL. Furthermore, income contributed most to the explanation of educational differences in frailty, suggesting full mediation. CONCLUSION: Frailty has a significant negative influence on HRQOL in the community-based elderly population, and acts as a mediator between SES and HRQOL. As a mediator, income can explain educational difference related with the frailty.

Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials.

We introduce a simple process for the fabrication of SiO2 films embedded with ß-Sn-rich nano/microspheres. Sn spheres with maximum and minimum sizes of 10 µm (near the SiO2 surface) and 5 nm (at the Si/SiO2 interface) were grown within a 0.7-5.7 µm-thick SiO2 layer by evaporating SnO powders onto an Si (100) substrate for 1-600 min at 600-900 °C and 0.001-5.0 Torr. A possible growth mechanism of these materials is discussed. The current-voltage characteristics of the as-fabricated samples were investigated to identify potential applications. During these tests, small flashes of light and the presence of damaged areas were observed at the oxide surfaces of the samples using an optical camera and a field emission scanning electron microscope, respectively. The electrical breakdown and shutdown of the devices observed in the current-voltage curves were attributed to the destruction of the SiO2 surface. In addition, the current-time responses show that the size of the damaged regions can be controlled by the voltage and duration of the applied stress, and are independent of the size and shape of the electrodes. The present materials thus possess great potential for applications in self-destructing devices.

Fabrication of High Efficiency Dye-Sensitized Solar Cells Based on TiO2 Nanoparticles Embedded in Ti Substrate.

We have embedded a TiO2 nanoparticle (NP) photoelectrode in a Ti substrate to improve the cell efficiency of conventional TiO2 NP based dye-sensitized solar cells (DSSCs) using Ti substrate. Compared to the conventional standing-type (TiO2 NPs on Ti substrate) DSSCs, the embedded-type (TiO2 NPs embedded in Ti substrate) DSSCs have shown an approximately 35% improvement in power conversion efficiency due to the improvement of J(sc). The embedded-type DSSCs have more charge transport paths than do standing-type DSSCs due to the increase of contact area between the TiO2 NP sidewall and the Ti substrate. This increased contact area decreases the electrical resistance and increases the charge collection efficiency, which leads to the improvement of J(sc). The embedded-type NP-DSSCs are very effective DSSC structures for enhancing the power conversion efficiency of Ti substrate based DSSCs.

Effect of TiCl4 Post-Treatment on the Embedded-Type TiO2 Nanotubes Dye-Sensitized Solar Cells.

We have studied the effect of TiCl4 post-treatment on the embedded-type TiO2 nanotubes (NT)-dye-sensitized solar cells (DSSCs). The TiO2 nanoparticles layer formed on TiO2 NTs surface by TiCl4 post-treatment showed different morphologies depending on TiCl4 treatment temperature. These different morphologies influenced the cell efficiency of TiO2 NT-DSSCs. The TiO2 NT treated with TiCl4 at 50 °C exhibited a rougher surface than that treated at 70 °C. The rough surface of the TiO2 NT improved the charge exchange between the dye and electrolyte. The TiO2 NT treated with TiCl4 at 50 °C showed better fill factor and cell efficiency than that treated at 70 °C. The TiCl4 post-treatment of TiO2 NT was effective at conditions of low temperature and long times. The TiO2 NT-DSSCs with TiCl4 post-treatment at 50 °C for 1.5 h showed an efficiency of 6.52%.

Transmission electron microscopy study of 3.2 YSZ single crystals manufactured by the skull melting method.

Transmission electron microscopy (TEM) analyses were performed to examine the spontaneously ordered structure in single crystals of 3.2 mole% of Y2O3 added ZrO2 (3.2 YSZ) manufactured by the Skull melting method. The selected area electron diffraction patterns showed several super-structure reflections with symmetrical intensity at (100), (010), and (110) positions, indicating that Y0.5Zr0.5O(2-x) with L1(0)-like cation-ordered structure was formed in 3.2 YSZ. High-resolution TEM has been used to reveal the presence of the partially ordered structure, which was characterized by a doublet periodicity in the contrast of the {100} lattice planes.

Effects of temperature, target/substrate distance, and background pressure on growth of ZnO nanorods by pulsed laser deposition.

The growth of ZnO nanorods on the c-plane of Al2O3 substrates by PLD was been investigated by controlling processing conditions such as growth temperature, distance between target and substrate, and background oxygen pressure. ZnO nanorods were observed from the growth temperature of 600 degrees C for the oxygen pressure of 30 mTorr and the target/substrate distance of 70 mm. The diameters of the ZnO nanorods at the temperature of 700 degrees C and the oxygen pressure of 30 mTorr were approximately 200, 70, and 40 nm for the distance of 45, 70, and 100 mm, respectively. ZnO films without nanorods were observed at the distance of 70 mm and the temperature of 700 degrees C when the oxygen pressure decreased to 1 mTorr. The kinetic energy of the ablated particles by the laser decreases during collisions with background oxygen molecules, resulting in conditions that favor the growth of ZnO nanorods.

Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering.

We investigated the size-dependent electrical conductivities of indium zinc oxide stripes with different widths from 50 nm to 4 microm and with the same thickness of 50 nm deposited by RF magnetron sputtering. The size of the indium zinc oxide stripes was controlled by e-beam lithography. The distance of the two Ti/Au Ohmic electrodes along the indium zinc oxide stripes was kept constant at 25 microm. The electrical conductivity decreased as the size of the indium zinc oxide stripes decreased below a critical width (80 nm). The activation energy, derived from the electric conductivity versus temperature measurement, was dependent on the dimensions of indium zinc oxide stripes. These results can be understood as stemming from surface charge trapping from the absorption of oxygen and/or water vapor, which leads to an increase in the energy difference between the conduction energy band and the Fermi energy.

Low temperature growth and optical properties of ZnO nanowires using an aqueous solution method.

ZnO nanowires were grown on indium tin oxide (ITO) coated glass substrates at a low temperature of 90 degrees C using an aqueous solution method. The ZnO seeds were coated on the ITO thin films by using a spin coater. ZnO nanowires were formed in an aqueous solution containing zinc nitrate hexahydrate (Zn(NO3)2 x 6H2O) and hexamethylenetetramine (C6H12N4). The pH value and concentration of the solution play an important role in the growth and morphologies of ZnO nanowires. The size of ZnO naonowires increased as the concentration of the solution increased. It was formed with a top surface of hexagonal and tapered shape at low and high pH values respectively. Additionally, the single crystalline structure and optical property of the ZnO nanowires were investigated using high-resolution transmission electron microscopy and photoluminescence spectroscopy.

GaN, ZnO and InN nanowires and devices.

A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.