InP high power monolithically integrated widely tunable laser and SOA array for hybrid integration.

We present a monolithic InP-based photonic integrated circuit (PIC) consisting of a widely tunable laser master oscillator feeding an array of integrated semiconductor optical amplifiers that are interferometrically combined on-chip in a single-mode waveguide. We demonstrate a stable and efficient on-chip coherent beam combination and obtain up to 240 mW average power from the monolithic PIC, with 30-50 kHz Schawlow-Townes linewidths and >180 mW average power across the extended C-band. We also explored hybrid integration of the InP-based laser and amplifier array PIC with a high quality factor silicon nitride microring resonator. We observe lasing based on gain from the interferometrically combined amplifier array in an external cavity formed via feedback from the silicon nitride microresonator chip; this configuration results in narrowing of the Schawlow-Townes linewidth to ∼3 kHz with 37.9 mW average power at the SiN output facet. This work demonstrates a new approach toward high power, narrow linewidth sources that can be integrated with on-chip single-mode waveguide platforms for potential applications in nonlinear integrated photonics.

Direct chip-scale optical frequency divider via regenerative harmonic injection locking.

A novel optical frequency division technique, called regenerative harmonic injection locking, is used to transfer the timing stability of an optical frequency comb with a repetition rate in the millimeter wave range (∼300GHz) to a chip-scale mode-locked laser with a ∼10GHz repetition rate. By doing so, the 300 GHz optical frequency comb is optically divided by a factor of 30× to 10 GHz. The stability of the mode-locked laser after regenerative harmonic injection locking is ∼10-12 at 1 s with a 1/τ trend. To facilitate optical frequency division, a coupled opto-electronic oscillator is implemented to assist the injection locking process. This technique is exceptionally power efficient, as it uses less than 100µW of optical power to achieve stable locking.

Integrated line-by-line optical pulse shaper for high-fidelity and rapidly reconfigurable RF-filtering.

We present a 32 channel indium phosphide integrated pulse shaper with 25 GHz channel spacing, where each channel is equipped with a semiconductor optical amplifier allowing for programmable line-by-line gain control with submicrosecond reconfigurability. We critically test the integrated pulse shaper by using it in comb-based RF-photonic filtering experiments where the precise gain control is leveraged to synthesize high-fidelity RF filters which we reconfigure on a microsecond time scale. Our on-chip pulse shaping demonstration is unmatched in its combination of speed, fidelity, and flexibility, and will likely open new avenues in the field of advanced broadband signal generation and processing.