Design of low-threshold photonic-crystal surface-emitting lasers with confined gain regions by using selective area intermixing.

Photonic-crystal surface-emitting lasers have many promising properties over traditional semiconductor lasers and are regarded as the next-generation laser sources. However, the minimum achievable lasing threshold of PCSELs is still several times larger than that of VCSELs, and limiting its applications especially if the required power is small. Here, we propose a new design that reduces the gain region in the lateral plane by using selective quantum-well intermixing to reduce the threshold current of PCSELs. By performing theoretical calculations, we confirmed that the threshold current can be lowered by a factor of two to three while keeping the PCSEL's advantage of small divergence angle.

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.

In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the "thermal cross-talk" effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers.

We propose a highly polarized vertical-cavity surface-emitting laser (VCSEL) consisting of staggered InGaN multiple quantum wells (MQWs), with the resonance cavity and polarization enabled by a bottom nanoporous (NP) n-GaN distributed Bragg reflectors (DBRs), and top TiO2 high-index contrast gratings (HCGs). Optoelectronic simulations of the 612 nm VCSEL were systematically and numerically investigated. First, we investigated the influences of the NP DBR and HCG geometries on the optical reflectivity. Our results indicate that when there are more than 17 pairs of NP GaN DBRs with 60% air voids, the reflectance can be higher than 99.7%. Furthermore, the zeroth-order reflectivity decreases rapidly when the HCG's period exceeds 518 nm. The optimal ratios of width-to-period (52.86 ± 1.5%) and height-to-period (35.35 ± 0.14%) were identified. The staggered MQW design also resulted in a relatively small blue shift of 5.44 nm in the emission wavelength under a high driving current. Lastly, we investigated the cavity mode wavelength and optical threshold gain of the VCSEL with a finite size of HCG. A large threshold gain difference of approximately 67.4-74% between the 0th and 1st order transverse modes can be obtained. The simulation results in this work provide a guideline for designing red VCSELs with high brightness and efficiency.

Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers.

Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (VCSELs) in 2008, the maximum output power (Pmax) and threshold current density (Jth) has been improved significantly after a decade of technology advancements. This article reviewed the key challenges for the realization of VCSELs with III-nitride materials, such as inherent polarization effects, difficulties in distributed Bragg's reflectors (DBR) fabrication for a resonant cavity, and the anti-guiding effect due to the deposited dielectrics current aperture. The significant tensile strain between AlN and GaN hampered the intuitive cavity design with two epitaxial DBRs from arsenide-based VCSELs. Therefore, many alternative cavity structures and processing technologies were developed; for example, lattice-matched AlInN/GaN DBR, nano-porous DBR, or double dielectric DBRs via various overgrowth or film transfer processing strategies. The anti-guiding effect was overcome by integrating a fully planar or slightly convex DBR as one of the reflectors. Special designs to limit the emission polarization in a circular aperture were also summarized. Growing VCSELs on low-symmetry non-polar and semipolar planes discriminates the optical gain along different crystal orientations. A deliberately designed high-contrast grating could differentiate the reflectivity between the transverse-electric field and transverse-magnetic field, which restricts the lasing mode to be the one with the higher reflectivity. In the future, the III-nitride based VCSEL shall keep advancing in total power, applicable spectral region, and ultra-low threshold pumping density with the novel device structure design and processing technologies.

Improvement of output efficiency of p-face up photonic-crystal surface-emitting lasers.

We optimized the p-side emission device configuration of photonic-crystal surface-emitting laser (PCSEL) to facilitate the easier chip process and wafer level testing as well as the feasibility of lasing at shorter wavelength. Typically, in order to obtain uniformly distributed current for larger emission area of PCSELs, laser output is designed through the n-side window due to the low hole mobility and thin p-side cladding layer. However, the substrate as well as the epi-layers have to be isolated before the test of each single die on the wafer, which compromised the advantage of wafer-level test of surface emitters. On the other hand, for lasers with emission photon energy higher than the bandgap energy of GaAs substrate, the power will be entirely attenuated. In this study, the optimized p-side emission by applying the transparent conduction layer on top of the p side contact layer to enhance the current distribution and breaking the symmetry of conventional circle pattern in a unit cell to boost the output efficiency is investigated. Through this approach, a high efficiency p-side up PCSEL platform with lower fabrication cost is developed, which is also applicable for short wavelength PCSELs.

Perovskite random lasers: a tunable coherent light source for emerging applications.

Metal halide perovskites have attracted increasing attention due to their superior optical and electrical characteristics, flexible tunability, and easy fabrication processes. Apart from their unprecedented successes in photovoltaic devices, lasing action is the latest exploitation of the optoelectronic performance of perovskites. Among the substantial body of research on the configuration design and light emission quality of perovskite lasers, the random laser is a very interesting stimulated emission phenomenon with unique optical characteristics. In this review article, we first comprehensively overview the development of perovskite-based optoelectronic devices and then focus our discussion on random lasing performance. After an introduction to the historical development of versatile random lasers and perovskite random lasers, we summarize several synthesis methods and discuss their material configurations and stability in synthesized perovskite materials. Following this, a theoretical approach is provided to explain the random lasing mechanism in metal halide perovskites. Finally, we propose future applications of perovskite random lasers, presenting conclusions as well as future challenges, such as quality stability and toxicity reduction, of perovskite materials with regard to practical applications in this promising field.

Vertically integrated diffractive gratings on photonic crystal surface emitting lasers.

We designed and fabricated a photonic crystal surface emitting laser (PCSEL) with vertically integrated diffractive optical elements on their top to study the mechanism of static beam steering on a single chip. The deflected output beam by the self-formed periodic ITO cladding layer of the PCSEL can be further steered by changing the grating period and azimuthal angle of the diffractive gratings relative to the photonic crystal. Through the analysis of photonic band structure and lasing characteristics, the periodic ITO structure is coupled to the photonic crystal band, whereas the integrated grating serves the diffractive function only. The findings pave the way for the design of PCSELs enabling single or multiple output beam with varying direction capability. This type of laser is regarded as an ideal light source for various applications, such as light detection and ranging and three-dimensional sensing systems.

Current Modulation of Plasmonic Nanolasers by Breaking Reciprocity on Hybrid Graphene-Insulator-Metal Platforms.

A hybrid graphene-insulator-metal (GIM) platform is proposed with a supported surface plasmon polariton (SPP) wave that can be manipulated by breaking Lorentz reciprocity. The ZnO SPP nanowire lasers on the GIM platforms are demonstrated up to room temperature to be actively modulated by applying external current to graphene, which transforms the cavity mode from the standing to propagation wave pattern. With applying 100 mA external current, the laser threshold increases by ≈100% and a 1.2 nm Doppler shift is observed due to the nonreciprocal propagation characteristic. The nanolaser performance also depends on the orientation of the nanowire with respect to the current flow direction. The GIM platform can be a promising platform for integrated plasmonic system functioning laser generation, modulation, and detection.

Full-Spectrum Analysis of Perovskite-Based Surface Plasmon Nanolasers.

We systematically studied the characteristics of hybrid perovskite-based surface plasmon nanolasers. If one changes the anion composition of perovskites, the emission wavelength can be easily tuned. We conducted in full-spectrum modeling that featured hybrid perovskite nanowires placed on different SiO2-coated metallic (Au, Ag, and Al) plates. The proposed nanocavities that supported plasmonic gap modes exhibited distinguished properties of nanolasers, such as low-transparency threshold-gain and low lasing threshold. The corresponding experimental results for the MAPbBr3 nanolaser on Ag revealed the low-threshold operation. These superior features were attributed to enhanced light-matter interaction with strong coupling. Therefore, the proposed scheme, integrated with hybrid perovskite as gain material, provides an excellent platform for nanoscale plasmon lasing in the visible to near-infrared spectra.

Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector.

We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

Plasmonic Nanolasers Enhanced by Hybrid Graphene-Insulator-Metal Structures.

Graphene is a two-dimensional (2D) structure that creates a linear relationship between energy and momentum that not only forms massless Dirac fermions with extremely high group velocity but also exhibits a broadband transmission from 300 to 2500 nm that can be applied to many optoelectronic applications, such as solar cells, light-emitting devices, touchscreens, ultrafast photodetectors, and lasers. Although the plasmonic resonance of graphene occurs in the terahertz band, graphene can be combined with a noble metal to provide a versatile platform for supporting surface plasmon waves. In this study, we propose a hybrid graphene-insulator-metal (GIM) structure that can modulate the surface plasmon polariton (SPP) dispersion characteristics and thus influence the performance of plasmonic nanolasers. Compared with values obtained when graphene is not used on an Al template, the propagation length of SPP waves can be increased 2-fold, and the threshold of nanolasers is reduced by 50% when graphene is incorporated on the template. The GIM structure can be further applied in the future to realize electrical control or electrical injection of plasmonic devices through graphene.

Flexible Organometal-Halide Perovskite Lasers for Speckle Reduction in Imaging Projection.

Disorder is emerging as a strategy for fabricating random laser sources with very promising materials, such as perovskites, for which standard laser cavities are not effective or too expensive. We need, however, different fabrication protocols and technologies for reducing the laser threshold and controlling its emission. Here, we demonstrate an effectively solvent-engineered method for high-quality perovskite thin films on a flexible polyimide substrate. The fractal perovskite thin films exhibit excellent optical properties at room temperature and easily achieve lasing action without any laser cavity above room temperature with a low pumping threshold. The lasing action is also observed in curved perovskite thin films on flexible substrates. The lasing threshold can be further reduced by increasing the local curvature, which modifies the scattering strengths of the bent thin film. We also show that the curved perovskite lasers are extremely robust with respect to repeated deformations. Because of the low spatial coherence, these curved random laser devices are efficient and durable speckle-free light sources for applications in spectroscopy, bioimaging, and illumination.

Ultracompact Pseudowedge Plasmonic Lasers and Laser Arrays.

Concentrating light at the deep subwavelength scale by utilizing plasmonic effects has been reported in various optoelectronic devices with intriguing phenomena and functionality. Plasmonic waveguides with a planar structure exhibit a two-dimensional degree of freedom for the surface plasmon; the degree of freedom can be further reduced by utilizing metallic nanostructures or nanoparticles for surface plasmon resonance. Reduction leads to different lightwave confinement capabilities, which can be utilized to construct plasmonic nanolaser cavities. However, most theoretical and experimental research efforts have focused on planar surface plasmon polariton (SPP) nanolasers. In this study, we combined nanometallic structures intersecting with ZnO nanowires and realized the first laser emission based on pseudowedge SPP waveguides. Relative to current plasmonic nanolasers, the pseudowedge plasmonic lasers reported in our study exhibit extremely small mode volumes, high group indices, high spontaneous emission factors, and high Purell factors beneficial for the strong interaction between light and matter. Furthermore, we demonstrated that compact plasmonic laser arrays can be constructed, which could benefit integrated plasmonic circuits.

Collective Lasing Behavior of Monolithic GaN-InGaN Core-Shell Nanorod Lattice under Room Temperature.

We demonstrated a monolithic GaN-InGaN core-shell nanorod lattice lasing under room temperature. The threshold pumping density was as low as 140 kW/cm2 with a quality factor as high as 1940. The narrow mode spacing between lasing peaks suggested a strong coupling between adjacent whisper gallery modes (WGM), which was confirmed with the far-field patterns. Excitation area dependent photoluminescence revealed that the long-wavelength lasing modes dominated the collective lasing behavior under a large excitation area. The excitation-area-dependent lasing behavior resulted from the prominent optical coupling among rods. According to the optical mode simulations and truncated-rod experiments, we confirmed that the fine-splitting of lasing peaks originated from the coupled supermodes existing in the periodic nanorod lattices. With wavelength-tunable active materials and a wafer-level scalable processing, patterning optically coupled GaN-InGaN core-shell nanorods is a highly practical approach for building various on-chip optical components including emitters and coupled resonator waveguides in visible and ultraviolet spectral range.

Exciton-polariton Josephson junctions at finite temperatures.

We consider finite temperature effects in a non-standard Bose-Hubbard model for an exciton- polariton Josephson junction (JJ) that is characterised by complicated potential energy landscapes (PEL) consisting of sets of barriers and wells. We show that the transition between thermal activation (classical) and tunneling (quantum) regimes exhibits universal features of the first and second order phase transition (PT) depending on the PEL for two polariton condensates that might be described as transition from the thermal to the quantum annealing regime. In the presence of dissipation the relative phase of two condensates exhibits non-equilibrium PT from the quantum regime characterized by efficient tunneling of polaritons to the regime of permanent Josephson or Rabi oscillations, where the tunneling is suppressed, respectively. This analysis paves the way for the application of coupled polariton condensates for the realisation of a quantum annealing algorithm in presently experimentally accessible semiconductor microcavities possessing high (105 and more) Q-factors.

Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors.

Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS2 on cone- and pyramid-patterned sapphire substrates were demonstrated, respectively.

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography.

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated.

Surface roughness effects on aluminium-based ultraviolet plasmonic nanolasers.

We systematically investigate the effects of surface roughness on the characteristics of ultraviolet zinc oxide plasmonic nanolasers fabricated on aluminium films with two different degrees of surface roughness. We demonstrate that the effective dielectric functions of aluminium interfaces with distinct roughness can be analysed from reflectivity measurements. By considering the scattering losses, including Rayleigh scattering, electron scattering, and grain boundary scattering, we adopt the modified Drude-Lorentz model to describe the scattering effect caused by surface roughness and obtain the effective dielectric functions of different Al samples. The sample with higher surface roughness induces more electron scattering and light scattering for SPP modes, leading to a higher threshold gain for the plasmonic nanolaser. By considering the pumping efficiency, our theoretical analysis shows that diminishing the detrimental optical losses caused by the roughness of the metallic interface could effectively lower (~33.1%) the pumping threshold of the plasmonic nanolasers, which is consistent with the experimental results.

Controllable lasing performance in solution-processed organic-inorganic hybrid perovskites.

Solution-processed organic-inorganic perovskites are fascinating due to their remarkable photo-conversion efficiency and great potential in the cost-effective, versatile and large-scale manufacturing of optoelectronic devices. In this paper, we demonstrate that the perovskite nanocrystal sizes can be simply controlled by manipulating the precursor solution concentrations in a two-step sequential deposition process, thus achieving the feasible tunability of excitonic properties and lasing performance in hybrid metal-halide perovskites. The lasing threshold is at around 230 µJ cm-2 in this solution-processed organic-inorganic lead-halide material, which is comparable to the colloidal quantum dot lasers. The efficient stimulated emission originates from the multiple random scattering provided by the micro-meter scale rugged morphology and polycrystalline grain boundaries. Thus the excitonic properties in perovskites exhibit high correlation with the formed morphology of the perovskite nanocrystals. Compared to the conventional lasers normally serving as a coherent light source, the perovskite random lasers are promising in making low-cost thin-film lasing devices for flexible and speckle-free imaging applications.

Localized surface plasmon for enhanced lasing performance in solution-processed perovskites.

A promising method to promote the lasing performance of solution-processed organic-inorganic lead-halide perovskites has been demonstrated. With the adding Ag and PMMA thin films, the threshold excitation power for low-temperature lasing action in perovskites can be greatly reduced by over two orders of magnitude than that acquired in bare perovskite layers, ascribing to the strong exciton-plasmon coupling between the Ag and perovskite films. Also, the PMMA layer can be exploited to prevent the perovskite degradation from the hydrolysis in ambient environment, achieving long-lasting light-emitting performance. The advantages exhibited by the hybrid perovskite configuration would be very promising in making practical laser devices.