ABSTRACT
A low temperature (<100 °C), flexible solar cell based on an organic-inorganic hybrid CH3NH3PbI3 perovskite-fullerene planar heterojunction (PHJ) is successfully demonstrated. In this manuscript, we study the effects of energy level offset between a solar absorber (organic-inorganic hybrid CH3NH3PbI3 perovskite) and the selective contact materials on the photovoltaic behaviors of the planar organometallic perovskite-fullerene heterojunction solar cells. We find that the difference between the highest occupied molecular orbital (HOMO) level of CH3NH3PbI3 perovskite and the Fermi level of indium-tin-oxide (ITO) dominates the voltage output of the device. ITO films on glass or on the polyethylene terephthalate (PET) flexible substrate with different work functions are investigated to illustrate this phenomenon. The higher work function of the PET/ITO substrate decreases the energy loss of hole transfer from the HOMO of perovskite to ITO and minimizes the energy redundancy of the photovoltage output. The devices using the high work function ITO substrate as contact material show significant open-circuit voltage enhancement (920 mV), with the power conversion efficiency of 4.54%, and these types of extra-thin planar bilayer heterojunction solar cells have the potential advantages of low-cost and lightweight.
ABSTRACT
Aluminum zinc oxide (AZO) has been embedded onto indium tin oxide (ITO) anode to enhance the light extraction from an organic light-emitting diode (OLED). The embedded AZO provides deflection and scattering interfaces on the newly generated AZO/organics and AZO/ITO interfaces rather than the conventional ITO/organic interface. The current efficiency of AZO embedded OLEDs was enhanced by up to 64%, attributed to the improved light extraction by additionally created reflection and scattering of emitted light on the AZO/ITO interfaces which was roughed in AZO embedding process. The current efficiency was found to increase with the increasing AZO embedded area ratio, but limited by the accompanying increases in haze and electrical resistance of the AZO embedded ITO film.
ABSTRACT
This paper demonstrates that carbon nanotubes (CNTs) can be synthesized on a cobalt coated silicon substrate using electron cyclotron chemical vapour deposition and without intentionally heating the substrate. With the mixed gases of C(3)H(8)/N(2), CNTs with a multi-walled structure and a diameter up to 70 nm have been observed. Results show that the diameter of the CNTs increases with the thickness of the cobalt catalyst film and the amount of nitrogen incorporated in the CNT films considerably influences the structures of the CNTs. Vertically aligned CNTs can be fabricated with a microwave power as low as 300 W and the flow rate ratio of C(3)H(8)/N(2) = 20/20 sccm. The CNTs exhibit a turn-on field of 0.2 V µm(-1) determined at the emission current density of 10 µA cm(-2).
