Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology.

Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.