Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices.

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LaAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements show that the Rashba coupling constant increases linearly with the interfacial electric field. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.

Limit of the electrostatic doping in two-dimensional electron gases of LaXO3(X = Al, Ti)/SrTiO3.

In LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, the bending of the SrTiO3 conduction band at the interface forms a quantum well that contains a superconducting two-dimensional electron gas (2-DEG). Its carrier density and electronic properties, such as superconductivity and Rashba spin-orbit coupling can be controlled by electrostatic gating. In this article we show that the Fermi energy lies intrinsically near the top of the quantum well. Beyond a filling threshold, electrons added by electrostatic gating escape from the well, hence limiting the possibility to reach a highly-doped regime. This leads to an irreversible doping regime where all the electronic properties of the 2-DEG, such as its resistivity and its superconducting transition temperature, saturate. The escape mechanism can be described by the simple analytical model we propose.

Multiple quantum criticality in a two-dimensional superconductor.

The diverse phenomena associated with the two-dimensional electron gas (2DEG) that occurs at oxide interfaces include, among others, exceptional carrier mobilities, magnetism and superconductivity. Although these have mostly been the focus of interest for potential future applications, they also offer an opportunity for studying more fundamental quantum many-body effects. Here, we examine the magnetic-field-driven quantum phase transition that occurs in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through a finite-size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting puddles coupled by a 2DEG and, depending on its conductance, the observed critical behaviour is single (corresponding to the long-range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). A phase diagram illustrating the dependence of the critical field on the 2DEG conductance is constructed, and shown to agree with theoretical proposals. Moreover, by retrieving the coherence-length critical exponent ν, we show that the quantum critical behaviour can be clean or dirty according to the Harris criterion, depending on whether the phase-coherence length is smaller or larger than the size of the puddles.

Two-dimensional superconducting phase in LaTiO3/SrTiO3 heterostructures induced by high-mobility carrier doping.

In this Letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers: a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electron spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by the field effect.