Uncovering the Lowest Thickness Limit for Room-Temperature Ferromagnetism of Cr1.6Te2.

Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnetic and memory applications. Downscaling such systems to the ultrathin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide Cr1.6Te2 by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room-temperature magnetic order is maintained. The electronic and magnetic structures are explored experimentally and theoretically, and it is shown that the films exhibit strong in-plane magnetic anisotropy as a consequence of large spin-orbit effects. Our study elucidates both magnetic and electronic properties of Cr1.6Te2 and corroborates the importance of intercalation to tune the magnetic properties of nanoscale materials' architectures.

Controlling Spin-Orbit Coupling to Tailor Type-II Dirac Bands.

NiTe2, a type-II Dirac semimetal with a strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density functional theory calculations, we report that the strength of the spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac Fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.

Induced high-temperature ferromagnetism by structural phase transitions in strained antiferromagnetic γ-Fe50Mn50 epitaxial films.

Strain effects in epitaxial films can substantially enhance individual functional properties or induce properties which do not exist in corresponding bulk materials. The bcc α-Fe50Mn50 films are a ferromagnetic with a Curie temperature between 650 K and 750 K, which do not exist in nature can be manipulated through the tensile strain. In this study, γ-Fe50Mn50 epitaxial films grown on GaAs(001) using molecular beam epitaxy are found to structural transition from the face-centered-cubic (fcc, a = 0.327 nm) γ-phase to the body-centered-cubic (bcc, a = 0.889 nm) α-phase. For α-Fe50Mn50 epitaxial films, ferromagnetism is accompanied by structural phase transition due to the tensile strain induced by the differences of the thermal expansion between the film and the substrate. Moreover, by realizing in epitaxial films with fcc structure a tensile strain state, phase transitions were introduced Fe-Mn alloy system with bcc structure. These findings are of fundamental importance to understanding the mechanism of phase transition and properties of epitaxial CuAu-I type antiferromagnetic alloy thin films under strain.

High-performance shape-engineerable thermoelectric painting.

Output power of thermoelectric generators depends on device engineering minimizing heat loss as well as inherent material properties. However, the device engineering has been largely neglected due to the limited flat or angular shape of devices. Considering that the surface of most heat sources where these planar devices are attached is curved, a considerable amount of heat loss is inevitable. To address this issue, here, we present the shape-engineerable thermoelectric painting, geometrically compatible to surfaces of any shape. We prepared Bi2Te3-based inorganic paints using the molecular Sb2Te3 chalcogenidometalate as a sintering aid for thermoelectric particles, with ZT values of 0.67 for n-type and 1.21 for p-type painted materials that compete the bulk values. Devices directly brush-painted onto curved surfaces produced the high output power of 4.0 mW cm-2. This approach paves the way to designing materials and devices that can be easily transferred to other applications.

Photoluminescence characteristics of Cd1-xMnxTe single crystals grown by the vertical Bridgman method.

In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated by the semiempirical Varshni relation. From the temperature dependence of the full width at half maximum of the L1 emission line, the broadening factors Γ(T) were determined from the fit to the data. The activation energies of thermal quenching were obtained for the L1 peak from the temperature dependence of the bound exciton peaks and were found to decrease with increasing Mn concentration.