Ultrafast dynamic compression technique to study the kinetics of phase transformations in bismuth.

Preheated Bi (296-532 K) was ramp compressed with 15-35 ns rise times to a peak stress of approximately 11 GPa to explore structural phase-transformation kinetics under dynamic loading conditions. At high strain rates, epsilon[over ]>5 x 10;{6} s;{-1}, deviation from equilibrium phase boundaries suggests that compression time scales are comparable to the new phase incubation period. The dependence of DeltaP/kT on epsilon[over ] is consistent with a thermally activated transformation.

Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam.

We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm2. Ablation thresholds of 0.06 and 0.1 J/cm2 and ablation depths of 14 and 20 nm were found for CaF2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials.