Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF4/O2 Plasma for Semiconductor Multilevel Interconnects.

As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant k ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-capacitance delay. Plasma-polymerized tetrakis(trimethylsilyoxy)silane (ppTTMSS) films were created using capacitively coupled plasma-enhanced chemical vapor deposition with deposition plasma powers ranging from 20 to 60 W and then etched in CF4/O2 plasma using reactive ion etching. No significant changes were observed in the Fourier-transform infrared spectroscopy (FTIR) spectra of the ppTTMSS films after etching. The refractive index and dielectric constant were also maintained. As the deposition plasma power increased, the hardness and elastic modulus increased with increasing ppTTMSS film density. The X-ray photoelectron spectroscopy (XPS) spectra analysis showed that the oxygen concentration increased but the carbon concentration decreased after etching owing to the reaction between the plasma and film surface. With an increase in the deposition plasma power, the hardness and elastic modulus increased from 1.06 to 8.56 GPa and from 6.16 to 52.45 GPa. This result satisfies the hardness and elastic modulus exceeding 0.7 and 5.0 GPa, which are required for the chemical-mechanical polishing process in semiconductor multilevel interconnects. Furthermore, all leakage-current densities of the as-deposited and etched ppTTMSS films were measured below 10-6 A/cm2 at 1 MV/cm, which is generally acceptable for IMD materials.

Inner surface modification of polyurethane ureteral stents using plasma-enhanced chemical vapor deposition to improve the resistance to encrustation in a pig model.

PURPOSE: We developed a ureteral stent with a non-fouling inner surface using plasma micro-surface modification technology. This study aimed to evaluate the safety and efficacy of this stent in animal model. MATERIALS AND METHODS: Ureteral stents were placed in five Yorkshire pigs. A bare stent was inserted on one side and an inner surface-modified stent was inserted on the other side. Two weeks after stenting, laparotomy was performed to harvest the ureteral stents. The changes in the inner surface were grossly evaluated using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). In addition, if encrustation was observed, the components were analyzed using Fourier transform infrared spectroscopy. Urine cultures were used for safety assessment. RESULTS: In all models, urine cultures did not show any bacterial growth before and after stenting, and stent-related complications were not identified. Hard materials were palpable in four bare models. Palpable material was not identified in the modified stent. Calcium oxalate dihydrate/uric acid stones were identified in two bare stents. In the SEM images with EDS, biofilm formation was confirmed in the bare stents. Biofilm formation was significantly less on the inner surface of the modified stent, and the intact surface of the modified stent was larger than that of the bare stent. CONCLUSIONS: The application of a specialized, plasma-enhanced, chemical vapor deposition technology to the inner surface of ureteral stents was safe and showed resistance to biofilm formation and encrustation.

Enhancement of dielectric performance of encapsulation in barium titanate oxide using size-controlled reduced graphene oxide.

Ferroelectric barium titanate (BTO) powder particles were encapsulated by three different sizes of reduced graphene oxide (rGO) platelets. The size of the graphene oxide (GO) platelets is controlled by varying the horn type ultrasonic times, i.e. 0, 30, and 60 min, respectively, and they are reduced with hydrazine to obtain rGO-encapsulated BTO (rGO@BTO) film. The rGO@BTO film exhibits an increase in the dielectric characteristics due to the interfacial polarization. These improved characteristics include a dielectric constant of 194 (a large increment of 111%), along with the dielectric loss of 0.053 (a slight increment of 13%) at 1 kHz, compared to the pure BTO dielectric film. The improvement in the dielectric constant of the rGO@BTO is attributed to the encapsulation degree between the rGO platelets and BTO powder particles, which results in the interfacial polarization and micro-capacitor effect in a dielectric film, and also contributes to a low dielectric loss. Therefore, a suitable size of rGO platelets for encapsulation is essential for high-dielectric performance.

Inner surface modification of ureteral stent polyurethane tubes based by plasma-enhanced chemical vapor deposition to reduce encrustation and biofilm formation.

Encrustation and/or biofilm formation in ureteral stents are major causes of obstruction and reduce the lifetime of a ureteral stent. In this study, the inner surfaces of polyurethane (PU) tubes (inner and outer diameters of 1.2 and 2.0 mm, respectively) were reformed with Ar, O2, and C2H2 gases using specialized plasma-enhanced chemical vapor deposition techniques for the first time. Then, the modified PU tubes were immersed in urine for 15 days, and the characteristics of the inner surfaces were analyzed. Depending on the modification procedure, the corresponding inner surface exhibited different chemical properties and different rates of encrustation and biofilm formation. For a hydrophilic surface treated with Ar and O2, encrustation and biofilm formation increased, while for the C2H2 coating, the development of encrustation and biofilm reduced by more than five times compared with the untreated bare PU tube. This study demonstrated that inner plasma surface modification of ureteral stents greatly enhances resistance to encrustation and biofilm formation.

Enhanced culturing of adipose derived mesenchymal stem cells on surface modified polystyrene Petri dishes fabricated by plasma enhanced chemical vapor deposition system.

Mesenchymal stem cells (MSCs) have received considerable attention as therapeutic cells for regenerative medicine and tissue engineering, because of their ability to replace damaged cells or regenerate surrounding cells. There are many technical difficulties in the mass production of high-quality stem cells because the stem cells must maintain an efficient proliferative cell state during in vitro culture. The results of this study show that plasma surface-modification enhanced significantly the culture of adipose-derived mesenchymal stem cells (ASCs) on the polystyrene (PS) Petri dishes. Ar, O2 , pyrrole, and 4,7,10-trioxa-1,13-tridecanediamine (TTDDA) were used as the gas and/or precursors for plasma modification. Specifically, surfaces of PS Petri dishes, coated with plasma polymerized pyrrole (ppPy) and plasma polymerized TTDDA (ppTTDDA) were found to contain amine and carboxyl functional groups, respectively. Ar and O2 plasma-treated PS Petri dishes have similar culture abilities (±1.2 times) to commercially available tissue culture polystyrene (TCPS) dishes, and PS Petri dishes coated with ppPy and ppTTDDA have significantly enhanced culture abilities (2.4 times) at 96 hr compared with TCPS dishes. Western blotting was performed using antibodies against stem cell marker proteins to confirm the stemness properties of stem cells, in the sense that the expressions of the antibody proteins such as CD44, CD73, and CD105 in plasma modified samples were similar to or higher than those in TCPS dishes.

Study on Effects of Carrier Gas Flow Rate on Properties of Low Dielectric Constant Film Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Octamethylcyclotetrasiloxane Precursor.

In semiconductor industry, low-dielectric-constant SiCOH films are widely used as inter-metal dielectric (IMD) material to reduce a resistance-capacitance delay, which could degrade performances of semiconductor chips. Plasma enhanced chemical vapor deposition (PECVD) system has been employed to fabricate the low-dielectric-constant SiCOH films. In this work, among various parameters (plasma power, deposition pressure, substrate temperature, precursor injection flow rate, etc.), helium carrier gas flow rate was used to modulate the properties of the low-dielectric-constant SiCOH films. Octamethylcyclotetrasiloxane (OMCTS) precursor and helium were injected into the process chamber of PECVD. And then SiCOH films were deposited varying helium carrier gas flow rate. As helium carrier gas flow rate increased from 1500 to 5000 sccm, refractive indices were increased from 1.389 to 1.428 with enhancement of mechanical strength, i.e., increased hardness and elastic modulus from 1.7 and 9.1 GPa to 3.3 and 19.8 GPa, respectively. However, the relative dielectric constant (k) value was slightly increased from 2.72 to 2.97. Through analysis of Fourier transform infrared (FTIR) spectroscopy, the effects of the helium carrier gas flow rate on chemical structure, were investigated. It was thought that the increase in helium carrier gas flow rate could affect the density with changes of chemical structure and composition. In conclusion, regulation of helium carrier gas flow rate can effectively modulate k values and mechanical strength, which is needed for IMD material in semiconductor fabrication possess.

Plasma Polymerized SiCOH Films from Octamethylcyclotetrasiloxane by Dual Radio Frequency Inductively Coupled Plasma Chemical Vapor Deposition System.

We have fabricated porous plasma polymerized SiCOH (ppSiCOH) films with low-dielectric constants (low-k, less than 2.9), by applying dual radio frequency plasma in inductively coupled plasma chemical vapor deposition (ICP-CVD) system. We varied the power of the low radio frequency (LF) of 370 kHz from 0 to 65 W, while fixing the power of the radio frequency (RF) of 13.56 MHz. Although the ppSiCOH thin film without LF had the lowest k value, its mechanical strength is not high to stand the subsequent semiconductor processing. As the power of the LF was increased, the densities of ppSiCOH films became high, accordingly high in the hardness and elastic modulus, with quite satisfactory low-k value of 2.87. Especially, the ppSiCOH film, deposited at 35 W, exhibited the highest mechanical strength (hardness: 1.7 GPa, and elastic modulus: 9.7 GPa), which was explained by Fourier transform infrared spectroscopy. Since the low-k material is widely used as an inter-layer dielectric insulator, good mechanical properties are required to withstand chemical mechanical polishing damage. Therefore, we suggest that plasma polymerized process based on the dual frequency can be a good candidate for the deposition of low-k ppSiCOH films with enhanced mechanical strength.

Surface modification of polystyrene Petri dishes by plasma polymerized 4,7,10-trioxa-1,13-tridecanediamine for enhanced culturing and migration of bovine aortic endothelial cells.

Plasma surface modification is an effective method for changing material properties to control cell behavior on a surface. This study investigates the efficiency of a plasma polymerized 4,7,10-trioxa-1,13-tridecanediamine (ppTTDDA) film coated on a polystyrene (PS) Petri dish, which is a biocompatible surface with carbon- and oxygen-based chemical species. The adhesion, proliferation, and migration properties of bovine aortic endothelial cells (BAECs) were profoundly enhanced in the ppTTDDA-coated PS Petri dishes without extracellular matrix (ECM) proteins, when compared with the uncoated PS Petri dishes. These observations indicate that ppTTDDA-coated PS Petri dishes can directly interact with cells, regardless of cell adhesion molecules. The increased cell affinity was attributed to the high concentration of carboxyl group on the surface of the ppTTDDA film. Such a carboxyl surface showed an excellent ability to promote culturing of BAECs. Plasma surface modification techniques are effective in improving biocompatibility and provide a surface environment for cell culture.

Effects of He/H2 Plasma Treatment on Properties of SiCOH Films Deposited with the 1,1,1,3,5,7,7,7- Octamethyl-3,5-Bis(Trimethylsiloxy) Tetrasiloxane Precursor.

Low-dielectric-constant SiCOH films fabricated using plasma enhanced chemical vapor deposition (PECVD) are widely used as inter-metallic dielectric (IMD) layers in interconnects of semiconductor chips. In this work, SiCOH films were deposited with 1,1,1,3,5,7,7,7-octamethyl-3,5-bis(trimethylsiloxy)tetrasiloxane (OMBTSTS), and plasma treatment was performed by an inductively coupled plasma (ICP) system with mixture of He and H2. The values of relative dielectric constant (k) of the as-deposited SiCOH films ranged from 2.64 to 4.19. The He/H2 plasma treatment led to a reduction of the k values of the SiCOH films from 2.64-4.19 to 2.07-3.94. To investigate the impacts of the He/H2 plasma treatment on the SiCOH films, the chemical compositions and structures of the as-deposited and treated the SiCOH films were compared by Fourier transform infrared spectroscopy. The experimental results indicate that the k value of the SiCOH films was decreased, there was a proportional increase in pore-related Si-O-Si structure, which is commonly called the cage structure with lager angle than 144°, after He/H2 plasma treatment. The He/H2 plasma treatment was considered to have reduced the k value by forming pores that could be represented by the cage structure. On the other hand, the leakage current density of the SiCOH films was slightly degraded by He/H2 plasma treatment, however, this was tolerable for IMD application. Concludingly the He/H2 plasma treated SiCOH film has the lowest relative dielectric constant (k~2.08) when the most highly hydrocarbon removal and cage structure formation increased.

Characterization of Bilayer Organic Solar Cells with Carbon Nanotubes Using Impedance Analysis.

Four organic solar cell (OSC) devices with the bilayer heterojunction architecture were investigated, where carbon nanotubes (CNTs) were doped within the acceptor layer. The power conversion efficiency (PCE) of the CNT-incorporated device with a concentration of 0.004 wt% is approximately 20% point higher than that of the reference one. As the concentration of CNTs became higher, the PCE of the devices deteriorated; this could be caused by the percolative connection of CNTs within the layer. The voltage dependence on the effective lifetime of the charge carriers, determined by Cole-Cole curves of the impedance analysis, was different for the reference and CNT-incorporating devices-the lifetime of the CNT-incorporated ones was shorter, possibly owing to the high local electric field near the CNTs. Controlling the concentration of CNTs below the critical concentration of percolation is a key factor in achieving high photovoltaic performance.

Low-k SiCOH Films Deposited with a Single Precursor 1,1,1,3,5,7,7,7 Octamethyl-3,5-Bis(trimethylsiloxy) Tetrasiloxane by Plasma Enhanced Chemical Vapor Deposition.

Low-dielectric-constant SiCOH films were deposited by plasma-enhanced chemical vapor deposition using 1,1,1,3,5,7,7,7-octamethyl-3,5-bis(trimethylsiloxy)tetrasiloxane (OMBTSTS) as a single precursor, and the characteristics were investigated. The relative dielectric constant (k) of the SiCOH films declined gradually from 3.57 to 1.90 with decreasing plasma power. The film with the lowest k, deposited at the lowest power of 10 W, showed the lowest leakage current density, with adequate mechanical strength (hardness: 0.98 GPa and elastic modulus: 8.56 GPa) for application in multilevel semiconductor interconnects. The chemistry of the OMBTSTS films was characterized by Fourier transform infrared spectroscopy to study the relation between the chemical and dielectric properties. The dielectric properties, such as the k value and leakage current density, could be explained by a quantitative relation between the Si-O stretching bond and hydrocarbon-related bonds, such as CH3 and Si-CH3 bonds, with lower polarizability in the SiCOH film. The refractive index, which is directly linked to the density of the film, was also investigated by ellipsometry. We consider OMBTSTS a promising candidate as a single precursor for fabricating low-k SiCOH films in the plasma-enhanced chemical vapor deposition system.

Relation of Dielectric Constants and Chemical Structures of Low Dielectric Constant SiCOH Films Deposited by Using Octamethylcyclotetrasiloxane and Tetraethylorthosilicate Precursors.

In case of the conventional SiCOH films, a post-deposition process was used to make pores by vaporization of porogen (e.g., hydrocarbon) for decreasing the dielectric constant. However, the authors intended the deposition of the SiCOH films, which does not need the post-deposition process to form the pores by using the dual precursors having different structures. The octamethylcy-clotetrasiloxane (OMCTS) and tetraethylorthosilicate (TEOS) have different structures which were of the ring shape and the linear shape, respectively. The OMCTS and TEOS were used to fabricate the plasma polymerized low dielectric constant SiCOH film by using the plasma enhanced chemical vapor deposition system in this work. A ratio of OMCTS and TEOS was adjusted by controlling flow rates of precursor carrier gases into the process chamber. The SiCOH films, which were deposited with dual precursors, showed the very low dielectric constants (relative dielectric constant k 2.06 and 2.09) at plasma power of 10 W. All the fabricated SiCOH films showed the proper leakage current densities below 10-6 A/cm-2 at 1 MV/cm as the intermetallic dielectric material. The SiCOH films were investigated to study the relations between dielectric constants and chemical structures by using Fourier transform infrared spectroscopy. The formation of pores inside the SiCOH films was studied through the relation between Si-O-Si peaks, including network, suboxide and cage peaks, and the dielectric constant.

Stacked Gold Nanodisks for Bimodal Photoacoustic and Optical Coherence Imaging.

Herein, we report on biological imaging nanoprobes: physically synthesized gold nanodisks that have inherent optical advantages-a wide range of resonant wavelengths, tunable ratio of light absorption-to-scattering, and responsiveness to random incident light-due to their two-dimensional circular nanostructure. Based on our proposed physical synthesis where gold is vacuum deposited onto a prepatterned polymer template and released from the substrate in the form of a nanodisk, monodisperse two-dimensional gold nanodisks were prepared with independent control of their diameter and thickness. The optical benefits of the Au nanodisk were successfully demonstrated by the measurement of light absorbance of the nanodisks and the application of stacked nanodisks, where a smaller sized Au nanodisk was laid atop a larger nanodisk, as bimodal contrast agents for photoacoustic microscopy and optical coherence tomography.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Effects of Bending Radii on the Characteristics of Flexible Organic Solar Cells Investigated by Impedance Analysis.

Flexible organic solar cells (OSCs) were fabricated on an indium-tin-oxide (ITO)/poly(ethylene terephthalate) (PET) substrate and were subjected to bending tests with various bending radii. We observed that the photovoltaic properties of the OSCs precipitously deteriorated at a bending radius ≤ 0.75 cm. In order to investigate the effects of the bending test, the changes in the surface morphology and the sheet resistance of the ITO-coated PET samples were investigated, and the photovoltaic properties of bent and unbent OSCs were evaluated. Thereafter, equivalent circuits for the OSCs were assumed and the change in their parameters, such as resistance and capacitance, was observed.

Effects of Plasma Polymer Films and Their Deposition Powers on the Barrier Characteristics of the Multilayer Encapsulation for Organic Devices.

Organic electronic devices (OEDs) are quite suitable for use in flexible devices due to their ruggedness and flexibility. A number of researchers have studied the use of OEDs on flexible substrates in transparent, flexible devices in the near future. However, water and oxygen can permeate through the flexible substrates and can reduce the longevity of OEDs made from organic materials, which are weak to moisture and oxygen. In order to prevent the degradation of the OEDs, researchers have applied an encapsulation layer to the flexible substrates. In this study, Al2O3/plasma polymer film/Al2O3 multi-layers were deposited on polyethylene-naphthalate substrates through a combination of atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD). The plasma polymer film, which is located between the Al2O3 films, is deposited via PECVD with the use of a tetrakis(trimethylsilyloxy)silane precursor. The power of the plasma deposition varied from 10 to 50 W. The hydrophobicity of the plasma polymer film surfaces was investigated by measuring the water contact angle. The chemical structures of the plasma polymer films were measured via ex-situ Fourier transform infrared analysis. The permeation curves of the various films were analyzed by performing a calcium (Ca)-test.

Angiogenic tube formation of bovine aortic endothelial cells grown on patterns formed by H2/He plasma treatment of the plasma polymerized hexamethyldisiloxane film.

Angiogenesis, the process to generate new vessels, is necessary for normal development in children as well as the wound healing and the tumor growth in adults. Therefore, it is physiologically and/or pathophysiologically significant to monitor angiogenesis. However, classical in vitro methods to evaluate angiogenesis take a long time and are expensive. Here, the authors developed a novel method to analyze the angiogenesis in a simple and economical way, using patterned films. In this study, the authors fabricated a plasma polymerized hexamethyldisiloxane (PPHMDSO) thin film deposited by capacitively coupled plasma chemical vapor deposition system with various plasma powers. The patterned PPHMDSO film was plasma treated by 10:90 H2/He mixture gas through a metal shadow mask. The films were characterized by water contact angle, atomic force microscopy, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy analyses. Our results show that the PPHMDSO film suppresses the cell adhesion, whereas surface modified PPHMDSO film enhances the cell adhesion and proliferation. From cell culture experiments, the authors found that the patterned film with 300 µm line interval was most efficient to evaluate the tube formation, a sapient angiogenic indicator. This patterned film will provide an effective and promising method for evaluating angiogenesis.

Fabrication and characterization of plasma-polymerized poly(ethylene glycol) film with superior biocompatibility.

A newly fabricated plasma-polymerized poly(ethylene glycol) (PP-PEG) film shows extremely low toxicity, low fouling, good durability, and chemical similarity to typical PEG polymers, enabling live cell patterning as well as various bioapplications using bioincompatible materials. The PP-PEG film can be overlaid on any materials via the capacitively coupled plasma chemical vapor deposition (CCP-CVD) method using nontoxic PEG200 as a precursor. The biocompatibility of the PP-PEG-coated surface is confirmed by whole blood flow experiments where no thrombi and less serum protein adsorption are observed when compared with bare glass, polyethylene (PE), and polyethylene terephthalate (PET) surfaces. Furthermore, unlike bare PE films, less fibrosis and inflammation are observed when the PP-PEG-coated PE film is implanted into subcutaneous pockets of mice groin areas. The cell-repellent property of PP-PEG is also verified via patterning of mammalian cells, such as fibroblasts and hippocampal neurons. These results show that our PP-PEG film, generated by the CCP-CVD method, is a biocompatible material that can be considered for broad applications in biomedical and functional materials fields.

Characterization of low-k dielectric SiCOH films deposited with decamethylcyclopentasiloxane and cyclohexane.

Ultra low-k dielectric SiCOH films were deposited with decamethylcyclopentasiloxane (DMCPSO, C10H30O5Si5) and cyclohexane (C6H12) precursors by plasma-enhanced chemical vapor deposition at the deposition temperature between 25 and 200 degrees C and their chemical composition and deposition kinetics were investigated in this work. Low dielectric constants of 1.9-2.4 were obtained due to intrinsic nanoscale pores originating from the relatively large ring structure of DMCPSO and to the relatively large fraction of carbon contents in cyclohexane. Three different deposition regions were identified in the temperature range. Deposition rates increased with temperature below 40 degrees C and decreased as temperature increased to 75 degrees C with apparent activation energies of 56 kJ/mol x K at < 40 degrees C, -26 kJ/mol x K at 40-100 degrees C, respectively. In the temperature region of 40-100 degrees C hydrocarbon deposition and decomposition process compete each other and decomposition becomes dominant, which results in apparent negative activation energy. Deposition rates remain relatively unaffected with further increases of temperature above 100 degrees C. FTIR analysis and deposition kinetic analysis showed that hydrocarbon deposition is the major factor determining chemical composition and deposition rate. The hydrocarbon deposition dominates especially at lower temperatures below 40 degrees C and Si-O fraction increases above 40 degrees C. We believe that dielectric constants of low-k films can be controlled by manipulating the fraction of deposited hydrocarbon through temperature control.

Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells.

We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + 66-phenyl C61 butyric acid methyl ester, bis-(ethylcyclopentadienyl)hafnium(IV) dichloride, and aluminum were deposited as a hole transport layer, an active layer, a cathode interfacial layer, and a cathode, respectively. The hafnium metallocene compound cathode interfacial layer improved the performance of OSCs compared to that of OSCs without the interfacial layer. The current density-voltage characteristics of OSCs with an interfacial layer thickness of 0.7 nm and of those without an interfacial layer showed power conversion efficiency [PCE] values of 2.96% and 2.34%, respectively, under an illumination condition of 100 mW/cm2 (AM 1.5). It is thought that a cathode interfacial layer of an appropriate thickness enhances the electron transfer between the active layer and the cathode, and thus increases the PCE of the OSCs.