Quantitative study on the photoemission of AlGaN nanoarrays based on the three-dimensional transportation within a four-step process.

Photocathodes play a crucial role in photoelectronic imaging and vacuum electronic devices. The quantum efficiency of photocathodes, which determines their performance, can be enhanced through materials engineering. However, the quantum efficiency of conventional planar photocathodes remains consistently low, at around 25%. In this paper, we propose what we believe is a novel structure of AlGaN nanowire array to address this issue. We investigate the photoemission characteristics of the nanowire array using the "four-step" process, which takes into account optical absorption, electron transportation, electron emission, and electron collection. We compare the quantum efficiency of nanowire arrays with different structure sizes and Al components. After studying the effect of incident light at various angles on the nanowire array photocathode, we identify the optimal dimensional parameters: a height of 400∼500 nm and a wire width of 200∼300 nm. Furthermore, we improved the collection efficiency of the photocathode by introducing a built-in/external electric field, and obtained a 104.4% enhancement of the collection current with the built-in electric field, meanwhile the photocurrent was increased by 87% compared to the case without the external electric field. These findings demonstrate the potential of optimizing photocathode performance through the development of a novel model and adjustment of parameters, offering a promising approach for photocathode applications.

Highly Monochromatic Ultraviolet LED Based on the SnO2 Microwire Heterojunction Beyond Dipole-Forbidden Band-Gap Transition.

SnO2 has been extensively applied in the fields of optoelectronic devices because of its large band gap, high exciton binding energy, and outstanding optical/electrical properties. However, its applications in ultraviolet light-emitting diodes (LEDs) are still hindered by the dipole-forbidden rule. Herein, the dipole-forbidden rule can be conquered by synthesizing Sb-incorporated SnO2 microwires (SnO2:Sb MWs), which are examined by ultraviolet photoluminescence emitting at 363.2 nm and a line width of 11.3 nm. Subsequently, a highly monochromatic ultraviolet light-emitting diode (LED) based on a SnO2:Sb MW heterojunction was constructed with a p-GaN film serving as the hole supplier. In the LED, the presence of a MgO intermediate layer can modulate carrier transport and recombination path, thus achieving band-edge optical transition in the SnO2:Sb MW. As the LED is modified using Ag nanowires, electrical properties, especially for the hole injection efficiency, were dramatically boosted, contributing significantly to the device high brightness. The LED emits at 365.9 nm and a line width of 12.4 nm. Therefore, we have realized a high-brightness and narrow-band ultraviolet LED with the shortest peak wavelength never seen in previously reported SnO2 LEDs. This work will promote the potential applications of low-dimensional SnO2 optoelectronic devices and provide an effective exemplification to overcome the dipole-forbidden rule in metal-oxide materials with "forbidden" energy gaps.

Direct coating of gold nanolayers to enhance the oxidation resistance of copper nanowire flexible transparent conductive films.

Copper nanowire-based transparent conductive films have garnered extensive attention owing to their cost-effectiveness and comparable electrical properties. However, the inherent instability of copper nanowires (Cu NWs) has curtailed their extensive utility and applicability. Herein, we present durable Cu@Au NW/PET films exhibiting elevated photoelectric attributes and remarkable flexibility. After preparing Cu NWs, the purification operation allows the purity of the Cu NWs to reach about 98%. Subsequently, Cu@Au NWs/PET flexible transparent conductive films (FTCFs) were prepared through vacuum filtration of Cu NWs and direct treatment with chloroauric acid. The resulting Cu@Au NW-based FTCFs exhibit impressive attributes including a low sheet resistance of 30 ohms per square and a high optical transmittance of 90%, resulting in an exceptional figure of merit (FOM) of 99. Remarkably, the Cu@Au NWs/PET film showed remarkable flexibility, retaining its properties after 10 000 cycles of continuous bending. Stability assessments further affirm the sheet resistance of the Cu@Au NW FTCFs remains nearly unchanged over 75 days at ambient temperature. The strategic integration of a gold nanolayer, serving as a protective coating on the Cu NWs, yields substantial enhancements in both electrical conductivity and overall stability within the Cu NW FTCF architecture. Furthermore, the obtained Cu@Au NW films exhibit rapid heating capabilities, reaching a temperature of 67 °C within 30 seconds at 3.5 V and subsequently returning to room temperature at the same rate. In summary, the introduction of a Au protective layer can effectively enhance the oxidation resistance of Cu NWs, which has great application potential in FTCFs in the field of film heaters.

Recent progress of gold nanostructures and their applications.

For noble metals, such as gold (Au) and silver (Ag), it is well-known that surface plasmons of their nanocrystals have significant spatial confinement and propagation loss due to the strong damping effect and the scattering between the plasmons and phonons. Noble metal nanostructures are usually referred to as "plasmonic nanostructures" in many studies. Based on the resonance effect of surface plasmons, the electromagnetic field can be localized on the subwavelength scale, which induces a booming new field of nanophotonics. Among the various nanostructures, Au nanostructures have received extensive attention both in fundamental research and technological fields due to their unique localized surface plasmon characteristics. These characteristics include strong optical extinction, near-field enhancement, and far-field scattering. By changing either the morphological parameters or the surrounding medium of nanostructures, the localized surface plasmon resonance (SPR) of Au nanostructures can be tuned in a large spectral region from visible to near infrared (Vis-NIR) wavelength. Corresponding to the experimental research, there are several numerical techniques that enable modeling the optical characteristics of Au nanostructures in different shapes and assemblies. The most popular technique is the finite-difference time-domain (FDTD) method for modeling various nanostructures and nanoscale optical devices. The accuracy of the computational models has been proven by reliable experimental data. In this review, we focused on Au nanostructures of different morphologies, such as nanorods, nanocubes, nanobipyramids and nanostars. Then combined with FDTD simulations, we described the effect of morphological parameters and the surrounding medium on the SPR properties of Au nanostructures. More and more achievements indicate that the surface plasmon effect is promising in many technical fields. In the last part, we summarize some typical applications of plasmonic Au nanostructures, such as high sensitivity sensors, photothermal conversion with hot electron effects and photoelectric devices, as well as plasmonic nanolasers.

Plasmonic and catalytic Au NBP@AgPd nanoframes for highly efficient photocatalytic reactions.

Heterogeneous metal nanostructures with excellent plasmonic performance and catalytic activity are urgently needed to realize efficient light-driven catalysis. Herein, we demonstrate the preparation of hollow Au nanobipyramid (NBP)@AgPd nanostructures by employing Au NBP@Ag nanorods as templates. The products could transform from Au NBP@AgPd nanoframes to nanocages, along with the redshift and broadening of the plasmon wavelength. Particularly, the plasmon intensity of these nanostructures remained considerable among the shape evolution process. Based on the selective absorption of CTAB, the Ag atoms on the side surfaces of the Au NBP@Ag nanorods were employed as the sacrificial templates to reduce Pd atoms through galvanic replacement. The reduced Pd and Ag atoms produced through the reduction reaction were preferably co-deposited on the corners and edges at the early stage and later deposited directly on the defect sites of the side facets, as more Ag atoms were released. The discontinued distribution of the Pd atoms gives an opportunity to etch away the Ag atoms in the cores, leading to the formation of hollow Au NBP@AgPd nanostructures after the etching process. It is worth noting that the deposition of the ultrathin AgPd nanoframe had little influence on the plasmonic properties of Au NBPs, as verified by electrodynamic simulations. The Au NBP@AgPd nanoframe showed great photocatalytic activity toward Suzuki coupling reactions under laser irradiation. Taken together, these results suggest that the hot electrons successfully transfer from Au NBP to the AgPd nanoframes to participate in the photocatalytic reactions. This study affords a promising route for the synthesis of anisotropic bimetallic nanostructures with excellent plasmonic performances.

Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction.

Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence and laser devices is still a challenge due to the absence of a reliable p-type ZnO. Herein, the sample of p-type ZnO microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, the p-type conductivity was examined using a single-MW field-effect transistor. Upon optical pumping, a ZnO:Sb MW showing a regular hexagonal cross-section and smooth sidewall facets can feature as an optical microcavity, which is evidenced by the achievement of whispering-gallery-mode lasing. By combining an n-type ZnO layer, a single ZnO:Sb MW homojunction light-emitting diode (LED), which exhibited a typical ultraviolet emission at a wavelength of 379.0 nm and a line-width of approximately 23.5 nm, was constructed. We further illustrated that strong exciton-photon coupling can occur in the as-constructed p-ZnO:Sb MW/n-ZnO homojunction LED by researching spatially resolved electroluminescence spectra, contributing to the exciton-polariton effect. Particularly, varying the cross-sectional dimensions of ZnO:Sb wires can further modulate the exciton-photon coupling strengths. We anticipate that the results can provide an effective exemplification to realize reliable p-type ZnO and tremendously promote the development of low-dimensional ZnO homojunction optoelectronic devices.

Exciton-polariton light-emitting diode based on a single ZnO superlattice microwire heterojunction with performance enhanced by Rh nanostructures.

One-dimensional (1D) wirelike superlattice micro/nanostructures have received considerable attention for potential applications due to their versatility and capability for modulating optical and electrical characteristics. In this study, 1D superlattice microwires (MWs), which are made of undoped ZnO and Ga-doped ZnO with periodic and alternating crystalline layers (ZnO/ZnO:Ga), were synthesized individually. Under optical excitation, a series of resonance peaks in the photoluminescence spectrum can be ascribed to polariton emission, which originates from the coupling interaction of the 1D photonic crystal and confined excitons along the wire direction. Using a p-type GaN layer as the hole transport layer, a kind of waveguide light source based on an individual ZnO/ZnO:Ga superlattice MW was proposed and constructed. By analysing the spatially resolved electroluminescence spectra, the observed multipeak was ascribed to exciton-polariton emission with a vacuum Rabi splitting of about 275 meV. Cladding with Rh nanostructures gives rise to appropriate ultraviolet plasmons, and the Rabi splitting energy of our device was enhanced up to 413 meV. The exciton-polariton properties were further examined using angle-resolved electroluminescence measurements. Therefore, individual superlattice MWs can act as optical microresonators to achieve photon-exciton coupling with a large Rabi splitting energy. The experimental results indicate that an individual ZnO/ZnO:Ga superlattice MW can be generally used in developing exciton-polariton luminescence/lasing light sources, particularly for constructing low-threshold/thresholdless lasers toward pragmatic applications.

Revealing the alloying and dealloying behaviours in AuAg nanorods by thermal stimulus.

Binary metallic nanocrystals are attractive as they offer an extra degree of freedom for structure and phase modulation to generate synergistic effects and extraordinary properties. However, whether the binary structures and phases at the nanoscale still follow the rules established on the bulk counterparts remains unclear. In this work, AuAg nanorods were used as a sample to probe into this issue. An in situ heating method by combining aberration-corrected transmission electron microscopes with a chip-based heating holder was employed to perform the heating experiments. It was found that the AuAg nanorods, which initially possessed heterostructures, can be designed and engineered to be gradient phase alloys with thermal pulses over 350 °C. Atomic diffusion inside the rod structures did not alter the shape of the rods but provided a route to fine-tune their properties. At higher temperatures, the discrepant sublimation behaviours between Au and Ag lead to dealloying of the nanorods. Durative sublimation of the Ag element can continuously tailor the lengths of the nanorods while concentrating the Au composition simultaneously. Especially, nearly pure Au nanocrystals can be obtained with the depletion of Ag by sublimation. These findings give insights into the nanoscale structure and phase behaviours in binary alloys and provide an alternative way to fine-tune their structure, phase, and properties.

Template-directed growth of Ag nanostructures: soft templates versus hard templates.

Hard template-directed growth methods present a compelling route for the synthesis of Ag nanostructures with precise size control. Meanwhile, soft template methods are effective and flexible for the synthesis of Ag nanostructures with various morphologies. However, the role of the soft template is ambiguous and obviously neglected in hard template-directed growth processes due to the strong confinement effect of the hard template, limiting the diversity of Ag nanostructures that can be obtained. Herein, we design Au nanoframes with deformable head structures as a hard template while using cetyltrimethylammonium chloride as a soft template, to direct the growth of Ag atoms on Au nanobipyramid seeds. When using the Au nanoframes with a closed head, the longitudinal growth of the Ag atoms is clearly limited by the hard template, leading to the formation of thick Ag nanorods with a five-fold twinned structure. The soft template starts to influence the growth process when the head structure of the Au nanoframes becomes hollow. In particular, the confinement effect of the hard template can be completely broken by selectively strengthening the role of the soft template, promoting the production of slender Ag nanorods similar to the results obtained in the absence of the hard template. Our results indicate that the morphology of the Ag nanostructures depends on the competition between the qualitatively confined energies of the hard and soft templates during the template-directed growth process. Moreover, this confined growth mechanism is also verified by the successful construction of various Ag nanostructures. The understanding of the collaborative competition mechanism between the soft and hard templates presents a great opportunity to construct novel Ag nanostructures through a template-directed method.

Porous Molybdenum Compound Design for Strong Microwave Absorption.

Exploring highly efficient microwave absorption (MA) materials with a facile preparation method is of great significance for tackling electromagnetic pollution and remains a challenge. Herein, ternary MoO2/Mo2C/Mo2N composites with porous structures are fabricated by a simple precursor pyrolysis process. The unique structure and multiple components, which could generate sufficient heterogeneous interfaces, are conducive to improve impedance matching, trigger polarization loss, and strengthen conduction loss. Profiting from the synergistic effect of multiple dissipation mechanisms, the composites exhibit exceedingly good MA performance. The minimum reflection loss value reaches -38.0 dB at 10.4 GHz when the thickness is 2.0 mm, and the maximum effective absorbing bandwidth is 4.11 GHz ranged from 12.41 to 16.52 GHz when the thickness is 1.5 mm. These strategies pave opportunities for rational design of Mo-related composites for high-efficiency electromagnetic-wave absorption performance.

Enhancing UV photodetection performance of an individual ZnO microwire p-n homojunction via interfacial engineering.

As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from a lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization of a homojunction ultraviolet photodetector, which involves a p-type Sb-doped ZnO microwire (ZnO:Sb MW) and n-type ZnO layer. The p-type conductivity of the as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor. Due to its good rectifying ability and excellent photovoltaic effect, the constructed p-ZnO:Sb MW/n-ZnO homojunction is able to work as an ultraviolet photodetector in self-biased and reversely biased manners. By appropriately engineering the band alignment of the p-ZnO:Sb/n-ZnO homojunction via a MgO interface modification layer, the optimized photodetector exhibits performance-enhanced ultraviolet detection capabilities, such as the light on/off ratio reaching up to 1.6 × 108, responsivity of over 267 mA W-1 and specific detectivity of approximately 1.2 × 1014 Jones upon 365 nm light illumination at 0 V. The detector also produces faster response with rise/recovery times of 102 µs/3.6 ms. This study not only employed a novel method to synthesize genuine p-type ZnO with excellent stability and reproducibility, but also opened up substantial opportunities for developing high-performance ZnO homojunction optoelectronic devices.

Comparative Study on Preparation Methods for Transparent Conductive Films Based on Silver Nanowires.

Silver nanowires, which have high optoelectronic properties, have the potential to supersede indium tin oxide in the field of electrocatalysis, stretchable electronic, and solar cells. Herein, four mainstream experimental methods, including Mayer-rod coating, spin coating, spray coating, and vacuum filtration methods, are employed to fabricate transparent conductive films based on the same silver nanowires to clarify the significance of preparation methods on the performance of the films. The surface morphology, conductive property, uniformity, and flexible stability of these four Ag NW-based films, are analyzed and compared to explore the advantages of these methods. The transparent conductive films produced by the vacuum filtration method have the most outstanding performance in terms of surface roughness and uniformity, benefitting from the stronger welding of NW-NW junctions after the press procedure. However, limited by the size of the membrane and the vacuum degree of the equipment, the small-size Ag films used in precious devices are appropriate to obtain through this method. Similarly, the spin coating method is suited to prepare Ag NWs films with small sizes, which shows excellent stability after the bending test. In comparison, much larger-size films could be obtained through Mayer-rod coating and spray coating methods. The pull-down speed and force among the Mayer-rod coating process, as well as the spray distance and traveling speed among the spray coating process, are essential to the uniformity of Ag NW films. After being treated with NaBH4 and polymethyl methacrylate (PMMA), the obtained Ag NW/PMMA films show great potential in the field of film defogging due to the Joule heating effect. Taken together, based on the advantages of each preparation method, the Ag NW-based films with desired size and performances are easier to prepare, meeting the requirements of different application fields.

Electrically driven whispering-gallery-mode microlasers in an n-MgO@ZnO:Ga microwire/p-GaN heterojunction.

In emerging miniaturized applications, semiconductor micro/nanostructures laser devices have drawn great public attentions of late years. The device performances of micro/nanostructured microlasers are highly restricted to the different reflective conditions at various side surfaces of microresonators and junction interface quality. In this study, an electrically driven whispering-gallery-mode (WGM) microlaser composed of a Ga-doped ZnO microwire covered by a MgO layer (MgO@ZnO:Ga MW) and a p-type GaN substrate is illustrated experimentally. Incorporating a MgO layer on the side surfaces of ZnO:Ga MWs can be used to reduce light leakage along the sharp edges and the ZnO:Ga/GaN interface. This buffer layer incorporation also enables engineering the energy band alignment of n-ZnO:Ga/p-GaN heterojunction and manipulating the current transport properties. The as-constructed n-MgO@ZnO:Ga MW/p-GaN heterojunction device can emit at an ultraviolet wavelength of 375.5 nm and a linewidth of about 25.5 nm, achieving the excitonic-related recombination in the ZnO:Ga MW. The broadband spectrum collapsed into a series of sharp peaks upon continuous-wave (CW) operation of electrical pumping, especially for operating current above 15.2 mA. The dominant emission line was centered at 378.5 nm, and the line width narrowed to approximately 0.95 nm. These sharp peaks emerged from the spontaneous emission spectrum and had an average spacing of approximately 5.5 nm, following the WGM cavity modes. The results highlight the significance of interfacial engineering for optimizing the performance of low-dimensional heterostructured devices and shed light on developing future miniaturized microlasers.

Optimized plasmonic performances and derivate applications of Au nanobipyramids.

Gold nanobipyramids (AuBPs) with narrow size distribution and high monodispersity have driven intensive attention because they display more advantageous plasmonic properties than gold nanorods (AuNRs). Applications of AuBPs based on tunable plasmonic properties and enhanced electromagnetic fields are being widely investigated in recent years. In this article, we focused on the preparation of well-defined AuBPs using the seed-mediated method, the plasmonic properties, and the exploration of AuBP-supported derivatives. The synergetic contributions of penta-twinned and appropriate growth environment could produce high-purity AuBPs. Systematic comparisons of plasmonic properties between AuBPs and AuNRs are illustrated. In addition, the well-defined AuBPs can be used as a template to synthesize multi-metallic nanostructures. The development of the epitaxial growth based on the AuBPs and corresponding applications are introduced. This study will provide a guide for the fabrication of composite nanostructures and advance their plasmonic applications.

Gold nanobipyramids doped with Au/Pd alloyed nanoclusters for high efficiency ethanol electrooxidation.

Plasmonic metal nanostructures are of great interest due to their excellent physicochemical properties and promising applications in a wide range of technical fields. Among metal nanostructures, bimetallic nanostructures with desired morphologies, such as core-shell, uniform alloy and surface decoration, are of great interest due to their improved properties and superior synergetic effects. In this paper, Au/Pd nanoclusters were deposited on the surface of gold nanobipyramids (AuBPs) into a core-shell nanostructure (AuBP@Au x Pd1-x ) through a reductive co-precipitation method. The AuBP@Au x Pd1-x nanostructure integrates effectively the advantages of plasmonic AuBPs and catalytic Pd ultrafine nanoclusters, as well as the stable Au/Pd alloy shell. The AuBP@Au x Pd1-x nanostructure exhibits superior electrocatalytic activity and durability for oxygen reduction in alkaline media owing to the synergistic effect between the AuBP core and Au/Pd shell. Furthermore, the shell thickness of AuBP@Au x Pd1-x nanostructures can be adjusted by varying the amount of precursor. Overall, the catalytic activity of bimetallic Au/Pd catalysts is likely to be governed by a complex interplay of contributions from the particle size and shape.

Electrically driven single microwire-based single-mode microlaser.

Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.

Dynamically regulated electroluminescence via strain engineering.

Dynamic regulation of the light-emission wavelength has important scientific significance for developing new electroluminescent devices and expanding the application scope to the fields of lighting, display, sensing, and human-machine interaction. In this work, an electroluminescent device with a dynamically tunable emission wavelength is achieved based on the piezoresistive effect. The tunable range can reach up to 12 nm as the external strain increases from 0% to 0.148%. Also, the luminescence mechanism of the device is systematically analyzed, and is shown to be mainly due to the transition of electrons in the ground state to the excitation state caused by thermal tunneling excitation with the participation of multi-phonons. The shift of the emission wavelength originates from the narrowing of the energy band structure under the tensile strain and the change of the crystal field around the defect centers. This work provides a new, to the best of our knowledge, strategy for the development of wavelength-tunable light-emitting devices.

Electronic and optical properties of two-dimensional GaN/ZnO heterojunction tuned by different stacking configurations.

Two-dimensional (2D) semiconductors show novel electronic and optoelectronic applications due to their excellent performance. The van der Waals (vdW) heterostructures are also a new method for the design of low dimensional optoelectronic devices. However, their fundamental electronic structure and optical properties are sensitive to stacking configurations. Herein, we perform systematic first-principle calculations for monolayer GaN and ZnO by six different stacking styles. The results suggest that the bonding type and stability vary with the stacking method. Chemical bonding and vdW interaction are respectively observed in different models. However, the carrier mobilities for different models are all enhanced after integration. Both type I and II band alignment can be generated from different stacking models. The optical properties suggest high absorptivity in the solar-blind region. This study is an early stage for the design and synthesis of photodetectors or solar cells based on 2D GaN/ZnO heterojunctions and also opens a far-ranging research interest in optoelectronic materials and devices with more advanced semiconductor materials.

Synthesis of Pd nanorod arrays on Au nanoframes for excellent ethanol electrooxidation.

Au-Pd hollow nanostructures have attracted a lot of attention because of their excellent ethanol electrooxidation performance. Herein, we report a facile preparation of Au nanoframe@Pd array electrocatalysts in the presence of cetylpyridinium chloride. The reduced Pd atoms were directed to mainly deposit on the surface of the Au nanoframes in the form of rods, leading to the formation of Au nanoframe@Pd arrays with a super-large specific surface area. The red shift and damping of the plasmon peak were ascribed to the deposition of the Pd arrays on the surface of the Au nanoframes and nanobipyramids, which was verified by electrodynamic simulations. Surfactants, temperature and reaction time determine the growth process and thereby the architecture of the obtained Au-Pd hollow nanostructures. Compared with the Au nanoframe@Pd nanostructures and Au nanobipyramid@Pd arrays, the Au nanoframe@Pd arrays exhibit an enhanced electrocatalytic performance towards ethanol electrooxidation due to an abundance of catalytic active sites. The Au NF@Pd arrays display 4.1 times higher specific activity and 13.7 times higher mass activity than the commercial Pd/C electrocatalyst. Moreover, the nanostructure shows improved stability towards the ethanol oxidation reaction. This study enriches the manufacturing technology to increase the active sites of noble metal nanocatalysts and promotes the development of direct ethanol fuel cells.

Self-powered ultraviolet photodetector based on an n-ZnO:Ga microwire/p-Si heterojunction with the performance enhanced by a pyro-phototronic effect.

In the present study, a heterojunction made of an individual ZnO microwire via Ga incorporation (ZnO:Ga MW) with a p-Si substrate was constructed to develop a self-powered ultraviolet photodetector. When operated under an illumination of 370 nm light with a power density of ∼ 0.5 mW/cm2, the device exhibited an excellent responsivity of 0.185 A/W, a large detectivity of 1.75×1012 Jones, and excellent stability and repeatability. The device also exhibited a high on/off photocurrent ratio up to 103, and a short rising and falling time of 499/412 µs. By integrating the pyro-phototronic effect, the maximum responsivity and detectivity increased significantly to 0.25 A/W and 2.30×1012 Jones, respectively. The response/recovery time was drastically reduced to 79/132 µs without an external power source. In addition, the effects of light wavelength, power density, and bias voltage on the photocurrent response mediated by the pyro-phototronic effect were systematically characterized and discussed. Our work not only provides an easy yet efficient procedure for constructing a self-powered ultraviolet photodetector but also broadens the application prospects for developing individual wire optoelectronic devices based on the photovoltaic-pyro-phototronic effect.