Thermo-elastic gigahertz-frequency oscillator through surface acoustic wave-silicon photonics.

Opto-electronic oscillators are sources of microwave-frequency tones that may reach very low noise levels. Much effort is being dedicated to the realization of oscillators based on photonic integrated devices. In this work, we propose and demonstrate a thermo-elastic opto-electronic oscillator at 2.213 GHz frequency based on a standard silicon-photonic integrated circuit. A microwave-frequency electrical signal modulates an optical pump wave carrier. The modulated waveform launches surface acoustic waves in a silicon-on-insulator substrate, through absorption in a metallic grating and thermo-elastic actuation. The waveform is reconverted to the optical domain through photoelastic modulation of an optical probe wave carrier in a standard racetrack resonator waveguide. Both the thermo-elastic actuation and the photoelastic modulation are radio-frequency selective. The output probe wave is detected, and the receiver voltage is amplified and fed back to modulate the optical pump input. Sufficient gain drives the loop into oscillations. The oscillator does not involve piezoelectricity and can be realized on any substrate. Long acoustic delays may be implemented in compact devices. The frequency of operation is scalable to tens of GHz. The principle may be useful in integrated microwave-photonic signal processing and in the elastic analysis of surfaces and thin layers.

Analysis of thin layers using surface acoustic wave-photonic devices in silicon-on-insulator.

The analysis of thin layers deposited on various substrates is widely employed in thickness monitoring, materials research and development and quality control. Measurements are often performed based on changes to acoustic resonance frequencies of quartz micro-balance devices. The technique is extremely sensitive, but it is restricted to hundreds of MHz frequencies and requires electrical connectivity. In this work we propose and demonstrate the analysis of elastic properties of thin layers deposited on surface acoustic wave-photonic devices in standard silicon-on-insulator. The devices operate at 2.4 GHz frequency, and their interfaces are fiber-optic. The radio-frequency transfer functions of the devices are modified by sub-percent level changes to the group velocity of surface acoustic waves following deposition of layers. Layers of aluminum oxide and germanium sulfide of thickness between 10-80 nm are characterized. The analysis provides estimates for Young's modulus of the layers.

Surface acoustic wave photonic devices in silicon on insulator.

Opto-mechanical interactions in planar photonic integrated circuits draw great interest in basic research and applications. However, opto-mechanics is practically absent in the most technologically significant photonics platform: silicon on insulator. Previous demonstrations required the under-etching and suspension of silicon structures. Here we present surface acoustic wave-photonic devices in silicon on insulator, up to 8 GHz frequency. Surface waves are launched through absorption of modulated pump light in metallic gratings and thermo-elastic expansion. The surface waves are detected through photo-elastic modulation of an optical probe in standard race-track resonators. Devices do not involve piezo-electric actuation, suspension of waveguides or hybrid material integration. Wavelength conversion of incident microwave signals and acoustic true time delays up to 40 ns are demonstrated on-chip. Lastly, discrete-time microwave-photonic filters with up to six taps and 20 MHz-wide passbands are realized using acoustic delays. The concept is suitable for integrated microwave-photonics signal processing.