ABSTRACT
Molybdenum (Mo) is the most commonly used material as back contact in thin-film solar cells. Adhesion of Mo film to soda-lime glass (SLG) substrate is crucial to the performance of solar cells. In this study, an optimized bilayer structure made of a thin layer of Mo on an ultra-thin chromium (Cr) adhesion layer is used as the back contact for a copper zinc tin sulfide (CZTS) thin-film solar cell on a SLG substrate. DC magnetron sputtering is used for deposition of Mo and Cr films. The conductivity of Mo/Cr bilayer films, their microstructure and surface morphology are studied at different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease the back contact thickness to 600 nm. That is two thirds to half of the thickness that is currently being used for bilayer and single layer back contact for thin-film solar cells. We demonstrate the excellent properties of Mo/Cr bilayer as back contact of a CZTS solar cell.
ABSTRACT
This work demonstrates the effect of oxygen vacancies in SnOx thin films on the performance of perovskite solar cells. Various SnOx films with different amounts of oxygen vacancies were deposited by sputtering at different substrate temperatures (25-300 °C). The transmittance of the films decreased from 82 to 66 % with increasing deposition temperature from 25 to 300 °C. Both X-ray photoelectron spectroscopy and electron-spin resonance spectroscopy confirmed that a higher density of oxygen vacancies was created within the SnOx film at a high substrate temperature, which caused narrowing of the SnOx bandgap from 4.1 (25 °C) to 3.74â eV (250 °C). Combined ultraviolet photoelectron spectroscopy and UV/Vis spectroscopy showed an excellent conduction band position alignment between the methylammonium lead iodide perovskite layer (3.90â eV) and the SnOx electron transport layer deposited at 250 °C (3.92â eV). As a result, a significant enhancement of the open-circuit voltage from 0.82 to 1.0â V was achieved, resulting in an increase of the power conversion efficiency of the perovskite solar cells from 11 to 14 %. This research demonstrated a facile approach for controlling the amount of oxygen vacancies in SnOx thin films to achieve a desirable energy alignment with the perovskite absorber layer for enhanced device performance.