Calibrated transmission and reflection from a multi-qubit microwave package.

We report calibrated microwave transmission and reflection measurements of a qubit sample holder at millikelvin temperatures. The methodology we present extends our previous work on one-port cryogenic short-open-load (SOL) calibration to a two-port SOLT measurement by implementing an unknown thru (T) standard. We report the resulting calibrated transmission and reflection at millikelvin temperatures through a printed circuit board that is installed into the sample holder. Finally, we consider a cascade of components at the end of a qubit drive line that includes (1) a cryogenic attenuator, (2) a coaxial cable, and (3) a qubit sample holder. Using experimentally determined parameters for return losses for all three components, we calculate the negligible state-preparation error in the frequency band of 5-7 GHz due to control pulse distortions arising from reflection at the coaxial launches. Taken together, our results highlight the utility of calibrated cryogenic scattering parameter measurements for the validation of qubit packaging and the wiring in its immediate vicinity.

Cryogenic sensor enabling broad-band and traceable power measurements.

Recently, great progress has been made in the field of ultrasensitive microwave detectors, reaching even the threshold for utilization in circuit quantum electrodynamics. However, cryogenic sensors lack the compatibility with broad-band metrologically traceable power absorption measurements at ultralow powers, which restricts their range of applications. Here, we demonstrate such measurements using an ultralow-noise nanobolometer, which we extend by an additional direct-current (dc) heater input. The tracing of the absorbed power relies on comparing the response of the bolometer between radio frequency and dc-heating powers traced to the Josephson voltage and quantum Hall resistance. To illustrate this technique, we demonstrate two different methods of dc-substitution to calibrate the power that is delivered to the base temperature stage of a dilution refrigerator using our in situ power sensor. As an example, we demonstrate the ability to accurately measure the attenuation of a coaxial input line between the frequencies of 50 MHz and 7 GHz with an uncertainty down to 0.1 dB at a typical input power of -114 dBm.

Bolometer operating at the threshold for circuit quantum electrodynamics.

Radiation sensors based on the heating effect of absorbed radiation are typically simple to operate and flexible in terms of input frequency, so they are widely used in gas detection1, security2, terahertz imaging3, astrophysical observations4 and medical applications5. Several important applications are currently emerging from quantum technology and especially from electrical circuits that behave quantum mechanically, that is, circuit quantum electrodynamics6. This field has given rise to single-photon microwave detectors7-9 and a quantum computer that is superior to classical supercomputers for certain tasks10. Thermal sensors hold potential for enhancing such devices because they do not add quantum noise and they are smaller, simpler and consume about six orders of magnitude less power than the frequently used travelling-wave parametric amplifiers11. However, despite great progress in the speed12 and noise levels13 of thermal sensors, no bolometer has previously met the threshold for circuit quantum electrodynamics, which lies at a time constant of a few hundred nanoseconds and a simultaneous energy resolution of the order of 10h gigahertz (where h is the Planck constant). Here we experimentally demonstrate a bolometer that operates at this threshold, with a noise-equivalent power of 30 zeptowatts per square-root hertz, comparable to the lowest value reported so far13, at a thermal time constant two orders of magnitude shorter, at 500 nanoseconds. Both of these values are measured directly on the same device, giving an accurate estimation of 30h gigahertz for the calorimetric energy resolution. These improvements stem from the use of a graphene monolayer with extremely low specific heat14 as the active material. The minimum observed time constant of 200 nanoseconds is well below the dephasing times of roughly 100 microseconds reported for superconducting qubits15 and matches the timescales of currently used readout schemes16,17, thus enabling circuit quantum electrodynamics applications for bolometers.

Flux-tunable heat sink for quantum electric circuits.

Superconducting microwave circuits show great potential for practical quantum technological applications such as quantum information processing. However, fast and on-demand initialization of the quantum degrees of freedom in these devices remains a challenge. Here, we experimentally implement a tunable heat sink that is potentially suitable for the initialization of superconducting qubits. Our device consists of two coupled resonators. The first resonator has a high quality factor and a fixed frequency whereas the second resonator is designed to have a low quality factor and a tunable resonance frequency. We engineer the low quality factor using an on-chip resistor and the frequency tunability using a superconducting quantum interference device. When the two resonators are in resonance, the photons in the high-quality resonator can be efficiently dissipated. We show that the corresponding loaded quality factor can be tuned from above 105 down to a few thousand at 10 GHz in good quantitative agreement with our theoretical model.

Detection of Zeptojoule Microwave Pulses Using Electrothermal Feedback in Proximity-Induced Josephson Junctions.

We experimentally investigate and utilize electrothermal feedback in a microwave nanobolometer based on a normal-metal (Au_{x}Pd_{1-x}) nanowire with proximity-induced superconductivity. The feedback couples the temperature and the electrical degrees of freedom in the nanowire, which both absorbs the incoming microwave radiation, and transduces the temperature change into a radio-frequency electrical signal. We tune the feedback in situ and access both positive and negative feedback regimes with rich nonlinear dynamics. In particular, strong positive feedback leads to the emergence of two metastable electron temperature states in the millikelvin range. We use these states for efficient threshold detection of coherent 8.4 GHz microwave pulses containing approximately 200 photons on average, corresponding to 1.1×10^{-21} J≈7.0 meV of energy.

Charge state dependent energy deposition by ion impact.

We report on a measurement of craters in thin dielectric films formed by Xe(Q+) (26 ≤ Q ≤ 44) projectiles. Tunnel junction devices with ion-irradiated barriers were used to amplify the effect of charge-dependent cratering through the exponential dependence of tunneling conductance on barrier thickness. Electrical conductance of a crater σ(c)(Q) increased by 4 orders of magnitude (7.9 × 10(-4) µS to 6.1 µS) as Q increased, corresponding to crater depths ranging from 2 to 11 Å. By employing a heated spike model, we determine that the energy required to produce the craters spans from 8 to 25 keV over the investigated charge states. Considering energy from preequilibrium nuclear and electronic stopping as well as neutralization, we find that at least (27 ± 2)% of available projectile neutralization energy is deposited into the thin film during impact.

Energy dissipation of highly charged ions on Al oxide films.

Slow highly charged ions (HCIs) carry a large amount of potential energy that can be dissipated within femtoseconds upon interaction with a surface. HCI-insulator collisions result in high sputter yields and surface nanofeature creation due to strong coupling between the solid's electronic system and lattice. For HCIs interacting with Al oxide, combined experiments and theory indicate that defect mediated desorption can explain reasonably well preferential O atom removal and an observed threshold for sputtering due to potential energy. These studies have relied on measuring mass loss on the target substrate or probing craters left after desorption. Our approach is to extract highly charged ions onto the Al oxide barriers of metal-insulator-metal tunnel junctions and measure the increased conductance in a finished device after the irradiated interface is buried under the top metal layer. Such transport measurements constrain dynamic surface processes and provide large sets of statistics concerning the way individual HCI projectiles dissipate their potential energy. Results for Xe(q +) for q = 32, 40, 44 extracted onto Al oxide films are discussed in terms of postirradiation electrical device characteristics. Future work will elucidate the relationship between potential energy dissipation and tunneling phenomena through HCI modified oxides.

Towards hot electron mediated charge exchange in hyperthermal energy ion-surface interactions.

We have made Na (+) and He (+) ions incident on the surface of solid state tunnel junctions and measured the energy loss due to atomic displacement and electronic excitations. Each tunnel junction consists of an ultrathin film metal-oxide-semiconductor device which can be biased to create a band of hot electrons useful for driving chemical reactions at surfaces. Using the binary collision approximation and a nonadiabatic model that takes into account the time-varying nature of the ion-surface interaction, the energy loss of the ions is reproduced. The energy loss for Na (+) ions incident on the devices shows that the primary energy loss mechanism is the atomic displacement of Au atoms in the thin film of the metal-oxide-semiconductor device. We propose that neutral particle detection of the scattered flux from a biased device could be a route to hot electron mediated charge exchange.

A hyperthermal energy ion beamline for probing hot electron chemistry at surfaces.

An ultrahigh vacuum ion beamline and chamber have been assembled to produce hyperthermal (<400 eV) energy ions for studying hot electron chemistry at surfaces. The specific design requirements for this modified instrument were chosen to enable the exposure of a metal-oxide-semiconductor (MOS) device to monoenergtic, well-collimated beams of alkali ions while monitoring both the scattered beam flux and the device characteristics. Our goal is to explore the role that hot electrons injected toward the MOS device surface play in the neutralization of scattered ions. To illustrate the functionality of our system, we present energy-resolved spectra for Na+, K+, and Cs+ ions scattered from the surface of a Ag(001) single crystal for a range of incident energies. In addition, we show MOS device current-voltage characteristics measured in situ in a new rapid-turnaround load lock and sample translation stage.

Vacancy island creation and coalescence using automated scanning tunneling microscopy.

We demonstrate that scanning tunneling microscope tip-surface crash events can be utilized as an efficient means for the creation of predefined island configurations for diffusion studies. Using this method, islands of varying size can be created and placed in close proximity, increasing the probability of initiating and observing coalescence events. Data obtained from crash initiated events on a Ag(111) surface are presented. Relaxation time exponents extracted from these data confirm that our method gives results consistent with previous, sputter-obtained island coalescence studies. We also describe an instrument-control routine developed for these measurements that utilizes commercial imaging and off-the-shelf automation software to automate the tracking of islands or other features by the microscope.

Trying out the competency profile for entry-level nutrition/dietetics practice.

The Ontario Regional Dietetic Internship Committee sponsored a workshop on "The Competency Based Profile", for Internship Directors and other dietitians involved with interns. The objectives of the workshop were: 1. to define the effects of implementation of some aspects of the competency profile into existing internship programs, 2. to exchange ideas regarding implementation, and 3. to give Internship Directors a further insight into the pros and cons of competency based education. Nine internship programs implemented some aspects of the profile. From one to seven dietetic interns and one to eleven dietitians were involved per program. Their findings were that the profile took on the average more time to complete than the regular CDA Dietetic Interns' Evaluation Forms. The profile could not be used as the sole evaluation tool. It was however an effective diagnostic tool. The rating scale is not well worded nor is its numerical system an effective way to evaluate dietetic interns. The competency profile is not suitable for all types of internship programs. Specialized internships have to expand on the profile to meet their own needs.