Coherent magnetic and electronic structure symmetry broken in frustrated bilayer Kagome ferromagnet Fe3Sn2.

In this letter, by measuring resistivity and magnetization with magnetic fieldHrotated inabplane and currentIalongcaxis, we studied the magnetic and electronic structure symmetry of frustrated topological bilayer Kagome ferromagnet Fe3Sn2. We observed that the curves of the resistivity and magnetization both showed broken two-fold symmetry from 5 K to 380 K. The further analysis indicates that there is a close causality between the spin arrangement and the electronic states in Fe3Sn2even above room temperature. These phenomena are closely related to the change in spin-orbit coupling (SOC) under the magnetic field. Our experimental results suggest that Fe3Sn2is an ideal platform to study the influence of spin arrangement on electronic state in topological materials and can also be used to design next generation magnetic devices by modulating SOC at external magnetic field.

Magnetoresistance reversals and anomalous Hall effect in Mn3SnC and effects of carbon deficiency.

The transport behavior of Mn3SnC and Mn3SnC0.8compounds was investigated. Positive magnetoresistance (MR) and an anomalous Hall effect (AHE) are observed for each compound near respective Curie temperature,TC. The positive MR is reversed during cooling fromTCbut is reentrant at low temperature. A 20% carbon deficiency of Mn3SnC0.8enlarges the positive MR atTCand shifts the temperatures for MR reversals. Ferromagnetic (FM) resonance measurements reveal that the MR reversals are related to the competition between FM and antiferromagnetic components of Mn atoms in each compound. A sign change of the Hall resistivity is observed during cooling of Mn3SnC but not for Mn3SnC0.8. A scaling analysis suggests that the AHE in each compound is mostly due to an intrinsic contribution and that the intrinsic contribution is decreased by the carbon deficiency in Mn3SnC0.8.

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons.

We have studied the charge to spin conversion in Bi1-x Sb x /CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter-deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi1-x Sb x . The SHC increases with increasing Bi1-x Sb x thickness before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present, play little role. Unexpectedly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of thermally excited Dirac-like electrons in the L valley of the narrow gap Bi1-x Sb x alloy.

Current-Induced Modulation of the Interfacial Dzyaloshinskii-Moriya Interaction.

The Dzyaloshinskii-Moriya (DM) interaction is an antisymmetric exchange interaction that is responsible for the emergence of chiral magnetism. The origin of the DM interaction, however, remains to be identified albeit the large number of studies reported on related effects. It has been recently suggested that the DM interaction is equivalent to an equilibrium spin current density originating from spin-orbit coupling, an effect referred to as the spin Doppler effect. The model predicts that the DM interaction can be controlled by spin current injected externally. Here we show that the DM exchange constant (D) in W/CoFeB-based heterostructures can be modulated with external current passed along the film plane. At higher current, D decreases with increasing current, which we infer is partly due to the adiabatic spin transfer torque. At lower current, D increases linearly with current regardless of the polarity of current flow. The rate of increase in D with the current density agrees with that predicted by the model based on the spin Doppler effect. These results imply that the DM interaction at the heavy-metal-ferromagnetic-metal interface partly originates from an equilibrium interface spin (polarized) current which can be modulated externally.

Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero-moment half-metal.

Due to its negligible spontaneous magnetization, high spin polarization and giant perpendicular magnetic anisotropy, Mn2RuxGa (MRG) is an ideal candidate as an oscillating layer in THz spin-transfer-torque nano-oscillators. Here, the effect of ultrathin Al and Ta diffusion barriers between MRG and MgO in perpendicular magnetic tunnel junctions is investigated and compared to devices with a bare MRG/MgO interface. Both the compensation temperature, Tcomp, of the electrode and the tunneling magnetoresistance (TMR) of the device are highly sensitive to the choice and thickness of the insertion layer used. High-resolution transmission electron microscopy, as well as analysis of the TMR, its bias dependence, and the resistance-area product allow us to compare the devices from a structural and electrical point of view. Al insertion leads to the formation of thicker effective barriers and gives the highest TMR, at the cost of a reduced Tcomp. Ta is the superior diffusion barrier which retains Tcomp, however, it also leads to a much lower TMR on account of the short spin diffusion length which reduces the tunneling spin polarization. The study shows that fine engineering of the Mn2RuxGa/barrier interface to improve the TMR amplitude is feasible.

The spin Nernst effect in tungsten.

The spin Hall effect allows the generation of spin current when charge current is passed along materials with large spin-orbit coupling. It has been recently predicted that heat current in a nonmagnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. We report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find changes in the longitudinal and transverse voltages with magnetic field when temperature gradient is applied across the film. The field dependence of the voltage resembles that of the spin Hall magnetoresistance. A comparison of the temperature gradient-induced voltage and the spin Hall magnetoresistance allows direct estimation of the spin Nernst angle. We find the spin Nernst angle of W to be similar in magnitude but opposite in sign to its spin Hall angle. Under an open-circuit condition, this sign difference results in the spin current generation larger than otherwise. These results highlight the distinct characteristics of the spin Nernst and spin Hall effects, providing pathways to explore materials with unique band structures that may generate large spin current with high efficiency.

High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications.

The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 µm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices' robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

Spin-orbit torque switching without an external field using interlayer exchange coupling.

Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer. The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.