A highly sensitive silicon nanowire array sensor for joint detection of tumor markers CEA and AFP.

Liver cancer is one of the malignant tumors with the highest fatality rate and increasing incidence, which has no effective treatment plan. Early diagnosis and early treatment of liver cancer play a vital role in prolonging the survival period of patients and improving the cure rate. Carcinoembryonic antigen (CEA) and alpha-fetoprotein (AFP) are two crucial tumor markers for liver cancer diagnosis. In this work, we firstly proposed a wafer-level, highly controlled silicon nanowire (SiNW) field-effect transistor (FET) joint detection sensor for highly sensitive and selective detection of CEA and AFP. The SiNWs-FET joint detection sensor possesses 4 sensing regions. Each sensing region consists of 120 SiNWs arranged in a 15 × 8 array. The SiNW sensor was developed by using a wafer-level and highly controllable top-down manufacturing technology to achieve the repeatability and controllability of device preparation. To identify and detect CEA/AFP, we modified the corresponding CEA antibodies/AFP antibodies to the sensing region surface after a series of surface modification processes, including O2 plasma treatment, soaking in 3-aminopropyltriethoxysilane (APTES) solution, and soaking in glutaraldehyde (GA) solution. The experimental results showed that the SiNW array sensor has superior sensitivity with a real-time ultralow detection limit of 0.1 fg ml-1 (AFP in 0.1× PBS) and 1 fg ml-1 (CEA in 0.1× PBS). Also, the logarithms of the concentration of CEA (from 1 fg ml-1 to 10 pg ml-1) and AFP (from 0.1 fg ml-1 to 100 pg ml-1) achieved conspicuously linear relationships with normalized current changes. The R2 of AFP in 0.1× PBS and R2 of CEA in 0.1× PBS were 0.99885 and 0.99677, respectively. Furthermore, the sensor could distinguish CEA/AFP from interferents at high concentrations. Importantly, even in serum samples, our sensor could successfully detect CEA/AFP. This demonstrates the promising clinical development of our sensor.

Correction: A highly sensitive silicon nanowire array sensor for joint detection of tumor markers CEA and AFP.

Correction for 'A highly sensitive silicon nanowire array sensor for joint detection of tumor markers CEA and AFP' by Ke Lu et al., Biomater. Sci., 2022, https://doi.org/10.1039/D2BM00555G.

A supersensitive silicon nanowire array biosensor for quantitating tumor marker ctDNA.

Cancer has become one of the major diseases threatening human health and life. Circulating tumor DNA (ctDNA) testing, as a practical liquid biopsy technique, is a promising method for cancer diagnosis, targeted therapy and prognosis. Here, for the first time, a field effect transistor (FET) biosensor based on uniformly sized high-response silicon nanowire (SiNW) array was studied for real-time, label-free, super-sensitive detection of PIK3CA E542K ctDNA. High-response 120-SiNWs array was fabricated on a (111) silicon-on-insulator (SOI) by the complementary metal oxide semiconductor (CMOS)-compatible microfabrication technology. To detecting ctDNA, we modified the DNA probe on the SiNWs array through silanization. The experimental results demonstrated that the as-fabricated biosensor had significant superiority in ctDNA detection, which achieved ultralow detection limit of 10 aM and had a good linearity under the ctDNA concentration range from 0.1 fM to 100 pM. This biosensor can recognize complementary target ctDNA from one/two/full-base mismatched DNA with high selectivity. Furthermore, the fabricated SiNW-array FET biosensor successfully detected target ctDNA in human serum samples, indicating a good potential in clinical applications in the future.

Correlation of magnetic and magnetoresistive properties of nanoporous Co/Pd thin multilayers fabricated on anodized TiO2 templates.

In this study, we consider a technological approach to obtain a high perpendicular magnetic anisotropy of the Co/Pd multilayers deposited on nanoporous TiO2 templates of different types of surface morphology. It is found that the use of templates with homogeneous and smoothed surface relief, formed on silicon wafers, ensures conservation of perpendicular anisotropy of the deposited films inherent in the continuous multilayers. Also, their magnetic hardening with doubling of the coercive field is observed. However, inhomogeneous magnetic ordering is revealed in the porous films due to the occurrence of magnetically soft regions near the pore edges and/or inside the pores. Modeling of the field dependences of magnetization and electrical resistance indicates that coherent rotation is the dominant mechanism of magnetization reversal in the porous system instead of the domain-wall motion typical of the continuous multilayers, while their magnetoresistance is determined by electron-magnon scattering, similarly to the continuous counterpart. The preservation of spin waves in the porous films indicates a high uniformity of the magnetic ordering in the fabricated porous systems due to a sufficiently regular pores array introduced into the films, despite the existence of soft-magnetic regions. The results are promising for the design and fabrication of future spintronic devices.

Complex magnetic ordering in nanoporous [Co/Pd]5-IrMn multilayers with perpendicular magnetic anisotropy and its impact on magnetization reversal and magnetoresistance.

We have systematically investigated the magnetization reversal characteristics and magnetoresistance of continuous and nanoporous [Co/Pd]5-IrMn multilayered thin films with perpendicular magnetic anisotropy at different temperatures (4-300 K). For their nanostructuring, porosity was induced by means of deposition onto templates of anodized titania with small (∼30 nm in diameter) homogeneously distributed pores. The magnetization reversal and magnetoresistance of the porous films were found to be closely related to the splitting of the ferromagnetic material into regions with different magnetic properties, in correlation with the complex morphology of the porous system. Independent magnetization reversal is detected for these regions, and is accompanied by its strong impact on the magnetic order in the capping IrMn layer. Electron-magnon scattering is found to be a dominant mechanism of magnetoresistance, determining its almost linear field dependence in a high magnetic field and contributing to its magnetoresistance behavior, similar to magnetization reversal, in a low magnetic field. Partial rotation of IrMn magnetic moments, consistent with the magnetization reversal of the ferromagnet, is proposed as an explanation for the two-state resistance behavior observed in switching between high-resistive and low-resistive values at the magnetization reversal of the porous system studied.