Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.

Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 °C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li(+)]/([In(3+)] + [Li(+)]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 °C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline In2O3 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li(+) and annealed at 250 °C for 1 h exhibited the highest electron mobility of 60 cm(2) V(-1) s(-1) and an on/off current ratio above 10(8) when utilized in a thin film transistor.

Effects of La Incorporation in Hf Based Dielectric on Leakage Conduction and Carrier Scattering Mechanisms.

Metal-oxide-semiconductor field effect transistors (MOSFETs) with various doses of La-incorporated in Hafnium-based dielectrics were characterized to evaluate the effect of La on dielectric and device properties. It is found that the Poole-Frenkel emission model could explain our experimental leakage current conduction mechanism reasonably and barrier heights of localized Poole-Frenkel trap sites increase gradually with increasing La incorporation. Cryogenic measurement (from 100 K to 300 K) of MOSFETs reveals that, as the content of La incorporation in the dielectric increases, the more increase of maximum effective mobility has been found at low temperature. It is mainly attributed to the more reduction of phonon scattering due to higher content of La atoms at the interface of dielectric and channel. Though it is relatively small, the existence of La in dielectric reduces coulomb scattering rate as well.

Computer-generated holograms of a real three-dimensional object based on stereoscopic video images.

A novel method of using stereoscopic video images to synthesize the computer-generated hologram (CGH) patterns of a real 3D object is proposed. Stereoscopic video images of a real 3D object are captured by a 3D camera system. Disparity maps between the captured stereo image pairs are estimated and from these estimated maps the depth data for each pixel of the object can be extracted on a frame basis. By using these depth data and original color images, hologram patterns of a real object can be computationally generated. In experiments, stereoscopic video images of a real 3D object, a wooden rhinoceros doll, are captured by using the Wasol 3D adapter system and its depth data are extracted from them. Then, CGH patterns of 1280 pixels x 1024 pixels are generated with these depth-annotated images of the wooden rhinoceros doll, and the CGH patterns are experimentally displayed via a holographic display system.