Effect of Geopolymerization Reaction on the Flexural Strength of Kaolin-Based Systems.

Geopolymers exhibit broad application prospects, including construction and radiation shielding, which require excellent mechanical performances. However, investigations on the nature of geopolymerization reactions and their consequential impact on mechanical performance are still vague. In this study, the effect of the major factors of Si/Al ratio and curing time on the geopolymerization reaction and flexural strength were studied based on the microstructure evolution and chemical bonding formation analyzed using the SEM, FTIR, peak deconvolution, and XRD methods. The microstructure of geopolymers was transferred from initially layered smooth particles of kaolinite to a 3D network porous structure, corresponding to sodalite. A spectrum exclusive to the geopolymer structure occurred at 973 cm-1, corresponding to the sodium aluminum silicate hydrate (N-A-S-H) links, the integral area of which represents the degree of geopolymerization reaction. Furthermore, a controllable reaction degree was achieved by adjusting the Si/Al ratio and curing time, where the maximum reaction degree of 55% was achieved at a Si/Al ratio of 1.94 when cured for 7 d. The correlation between the flexural strength and reaction degree was found to follow a proportional relationship, achieving a flexural strength of 21.11 MPa with a degree of 45%. This study provides insight into the development of mechanical strength through controlling the reaction process.

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3-O2 Reactive Ion Etching: The Effect of NO Surface Reaction.

Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 and SiO2 in an NF3/O2 radio-frequency glow discharge. The etch rate linearly depended on the source and bias powers, whereas the etch selectivity was affected by the power and ratio of the gas mixture. We found that the selectivity can be controlled by lowering the power with a suitable gas ratio, which affects the surface reaction during the etching process. X-ray photoelectron spectroscopy of the Si3N4 and QMS measurements support the effect of surface reaction on the selectivity change by surface oxidation and nitrogen reduction with the increasing flow of O2. We suggest that the creation of SiOxNy bonds on the surface by NO oxidation is the key mechanism to change the etch selectivity of Si3N4 over SiO2.

Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers.

Double buffer layers composed of (AlxGa1-x)2O3/Ga2O3 structures were employed to grow a Sn-doped α-Ga2O3 epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga2O3 thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700-800 °C. The slight mixing of κ and ß phases further improved the crystallinity of the grown Sn-Ga2O3 thin film through local lateral overgrowth. The electron mobility of the Sn-Ga2O3 thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga2O3 semiconductor devices within a shorter processing time.

The Bonding State and Surface Roughness of Carbon-Doped TiZrN Coatings for Hydrogen Permeation Barriers.

We doped carbon into a TiZrN coating to reduce hydrogen permeability, and investigated the phase formation, bonding state, microstructure, and surface roughness of the carbon-doped TiZrN. The laser output for laser carburization was limited to a range of 20-50%. The grain size of the TiZrN coatings decreased from 26.49 nm before carburization to 18.31 nm after carburization. For XPS analysis, the sp2/sp3 ratio was 1.23 at 20% laser output, but it showed 2.64 at 40% laser output, which means that amorphous carbon was formed. As the grain size decreased with the formation of amorphous carbon, the surface microstructure of the carbon-doped TiZrN coatings transitioned to an intergranular structure, indicating the creation of amorphous carbon-embedded (Ti, Zr)(C, N) in the coating. The surface roughness (Ra) of the carbon-doped TiZrN coating was decreased to a maximum of 7.12 nm, and the hydrogen permeability correspondingly decreased by 78% at 573 K.

Solution Combustion Synthesis of Ni-Based Nanocatalyst Using Ethylenediaminetetraacetic Acid and Nickel-Carbon Nanotube Growth Behavior.

We studied the influence of the ethylenediaminetetraacetic acid (EDTA) content used as combustion fuel when fabricating nickel oxide (NiO) nanocatalysts via solution combustion synthesis, as well as the growth behavior of carbon nanotubes (CNTs) using this catalyst. Nickel nitrate hexahydrate (Ni(NO3)2∙6H2O) was used as the metal precursor (an oxidizer), and the catalysts were synthesized by adjusting the molar ratio of fuel (EDTA) to oxidizer in the range of 1:0.25 to 2.0. The results of the crystal structure analysis showed that as the EDTA content increased beyond the chemical stoichiometric balance with Ni(NO3)2∙6H2O (F/O = 0.25), the proportion of Ni metal within the catalyst particles decreased, and only single-phase NiO was observed. Among the synthesized catalysts, the smallest crystallite size was observed with a 1:1 ratio of Ni ions to EDTA. However, an increase in the amount of EDTA resulted in excessive fuel supply, leading to an increase in crystallite size. Microstructure analysis revealed porous NiO agglomerates due to the use of EDTA, and differences in particle growth based on the fuel ratio were observed. We analyzed the growth behavior of CNTs grown using NiO nanocatalysts through catalytic chemical vapor deposition (CCVD). As the F/O ratio increased, it was observed that the catalyst particles grew excessively beyond hundreds of nanometers, preventing further CNT growth and leading to a rapid termination of CNT growth. Raman spectroscopy was used to analyze the structural characteristics of CNTs, and it was found that the ID/IG ratio indicated the highest CNT crystallinity near an F/O ratio of 1:1.

Phase Stability and Slag-Induced Destabilization in MnO2 and CeO2-Doped Calcia-Stabilized Zirconia.

MnO2 and CeO2 were doped to improve the corrosion resistance of CSZ (calcia-stabilized zirconia), and we studied the phase formation, mechanical properties, and corrosion resistance by molten mold flux. The volume fraction of the monoclinic phase gradually decreased as the amount of MnO2 doping increased. The splitting phenomenon of the t(101) peak was observed in 2Mn_CSZ, and in 4Mn_CSZ, it was completely split, forming a cubic phase. The relative density increased and the monoclinic phase decreased as the doping amount increased, leading to an increase in Vickers hardness and flexural strength. However, in 3Mn_CSZ and 4Mn_CSZ, where cubic phase formation occurred, the tetragonal phase decreased, leading to a reduction in these properties. MnO2-doped CSZ exhibited a larger fraction of the monoclinic phase compared to the original CSZ after the corrosion test, indicating worsened corrosion resistance. These results are attributed to the predominant presence of Mn3+ and Mn2+ forms, rather than the Mn4+ form, which has a smaller basicity difference with SiO2, and due to the low melting point. The monoclinic phase fraction decreased as the doping amount of CeO2 increased in CeO2-doped CSZ, but the rate of decrease was lower compared to MnO2-doped CSZ. The monoclinic phase decreased as the doping amount increased, but the Vickers hardness and flexural strength showed a decreasing trend due to the low relative density. The destabilization behavior of Ca in SEM-EDS images before and after corrosion was difficult to identify due to the presence of Ca in the slag, and the destabilization behavior of Ce due to slag after corrosion was not observed. In the XRD data of the specimen surface after the corrosion test, the fraction of the monoclinic phase increased compared to before the test but showed a lower monoclinic phase fraction compared to CSZ. It is believed that CeO2 has superior corrosion resistance compared to CaO because Ce predominantly exists in the form of Ce4+, which has a smaller difference in basicity within the zirconia lattice.

Oxygen Vacancy Ordering and Molten Salt Corrosion Behavior of ZnO-Doped CeYSZ for Solid Oxide Membranes.

Although 4Ce4YSZ has high corrosion resistance, it faces challenges concerning its sinterability and ionic conductivity. Therefore, we studied destabilization behavior caused by corrosion and oxygen vacancy ordering according to ZnO doping. Powders of (4Ce4YSZ)1-x(ZnO)x (x = 0.5, 1, 2, 4 mol%) were synthesized using the sol-gel method. With the addition of ZnO, the cubic phase increased, and secondary phases were not observed. The (111) peak showed a higher angle shift in ZnO-doped 4Ce4YSZ compared to 4Ce4YSZ, and TEM-SAED revealed a reduction in the spacing of the (011)t plane, suggesting lattice contraction due to the substitution of the smaller Zn2+ (60 Å) for Zr4+ (84 Å) in the lattice. The local atomic structure analysis was conducted using EXAFS to investigate the oxygen vacancy ordering behavior. Zr K-edge Fourier transform data revealed a decrease in the Zr-O1 peak intensity with an increasing amount of ZnO doping, indicating an increase in oxygen vacancies. The Zr-O1 peak position shifted to the right, leading to an increase in the Zr-O1 interatomic distance. In the Y K-edge Fourier transform data, the Y-O1 peak intensity did not decrease, and there was little variation in the Y-O1 interatomic distance. These results suggest that the oxygen vacancies formed due to ZnO doping are located in the neighboring oxygen shell of Zn, rather than in the neighboring oxygen shells of Y and Zr. Impedance measurements were conducted to measure the conductivity, and as the amount of ZnO doping increased, the total conductivity increased, while the activation energy decreased. The increase in oxygen vacancies by ZnO doping contributed to the enhancement of conductivity, and it is considered that these created oxygen vacancies did not interact with Zn2+ and did not form defect associations. Fluoride-based molten salts were introduced to the specimens to assess the corrosion behavior in a molten salt environment. Yttrium depletion layers (YDLs) were formed on the surfaces of all specimens due to the leaching of yttrium. However, Ce remained relatively stable at the interface according to EDS line scans, suggesting a reduction in the phase transformation (cubic, tetragonal to monoclinic) typically associated with yttrium leaching in YSZ.

Three-Dimensional Surface Treatment of MoS2 Using BCl3 Plasma-Derived Radicals.

The realization of next-generation gate-all-around field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (TMDC) semiconductors necessitates the exploration of a three-dimensional (3D) and damage-free surface treatment method to achieve uniform atomic layer-deposition (ALD) of a high-k dielectric film on the inert surface of a TMDC channel. This study developed a BCl3 plasma-derived radical treatment for MoS2 to functionalize MoS2 surfaces for the subsequent ALD of an ultrathin Al2O3 film. Microstructural verification demonstrated a complete coverage of an approximately 2 nm-thick Al2O3 film on a planar MoS2 surface, and the applicability of the technique to 3D structures was confirmed using a suspended MoS2 channel floating from the substrate. Density functional theory calculations supported by optical emission spectroscopy and X-ray photoelectron spectroscopy measurements revealed that BCl radicals, predominantly generated by the BCl3 plasma, adsorbed on MoS2 and facilitated the uniform nucleation of ultrathin ALD-Al2O3 films. Raman and photoluminescence measurements of monolayer MoS2 and electrical measurements of a bottom-gated FET confirmed negligible damage caused by the BCl3 plasma-derived radical treatment. Finally, the successful operation of a top-gated FET with an ultrathin ALD-Al2O3 (∼5 nm) gate dielectric film was demonstrated, indicating the effectiveness of the pretreatment.

Oxygen Vacancy and Valence Band Structure of Ba0.5Sr0.5Fe1-xCuxO3-δ (x = 0-0.15) with Enhanced ORR Activity for IT-SOFCs.

The oxygen reduction reaction (ORR) activity of a Cu-doped Ba0.5Sr0.5FeO3-δ (Ba0.5Sr0.5Fe1-xCuxO3-δ, BSFCux, x = 0, 0.05, 0.10, 0.15) perovskite cathode was investigated in terms of oxygen vacancy formation and valence band structure. The BSFCux (x = 0, 0.05, 0.10, 0.15) crystallized in a cubic perovskite structure (Pm3¯m). By thermogravimetric analysis and surface chemical analysis, it was confirmed that the concentration of oxygen vacancies in the lattice increased with Cu doping. The average oxidation state of B-site ions decreased from 3.583 (x = 0) to 3.210 (x = 0.15), and the valence band maximum shifted from -0.133 eV (x = 0) to -0.222 eV (x = 0.15). The electrical conductivity of BSFCux increased with temperature because of the thermally activated small polaron hopping mechanism showing a maximum value of 64.12 S cm-1 (x = 0.15) at 500 °C. The ASR value as an indicator of ORR activity decreased by 72.6% from 0.135 Ω cm2 (x = 0) to 0.037 Ω cm2 (x = 0.15) at 700 °C. The Cu doping increased oxygen vacancy concentration and electron concentration in the valence band to promote electron exchange with adsorbed oxygen, thereby improving ORR activity.

Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors.

As the electron mobility of two-dimensional (2D) materials is dependent on an insulating substrate, the nonuniform surface charge and morphology of silicon dioxide (SiO2) layers degrade the electron mobility of 2D materials. Here, we demonstrate that an atomically thin single-crystal insulating layer of silicon oxynitride (SiON) can be grown epitaxially on a SiC wafer at a wafer scale and find that the electron mobility of graphene field-effect transistors on the SiON layer is 1.5 times higher than that of graphene field-effect transistors on typical SiO2 films. Microscale and nanoscale void defects caused by heterostructure growth were eliminated for the wafer-scale growth of the single-crystal SiON layer. The single-crystal SiON layer can be grown on a SiC wafer with a single thermal process. This simple fabrication process, compatible with commercial semiconductor fabrication processes, makes the layer an excellent replacement for the SiO2/Si wafer.

Cf/SiC Ceramic Matrix Composites with Extraordinary Thermomechanical Properties up to 2000 °C.

The thermomechanical properties of carbon fiber reinforced silicon carbide ceramic matrix composites (Cf/SiC CMCs) were studied up to 2000 °C using high-temperature in situ flexural testing in argon. The CMC specimens were fabricated using an ultrahigh concentration (66 vol%) aqueous slurry containing nano-sized silicon carbide powder. The SiC powder compacts were obtained by drying the slurry and were densified using the precursor impregnation and pyrolysis (PIP) method with field assisted sintering technology/spark plasma sintering (FAST/SPS). The high relative density of the SiC green body (77.6%) enabled densification within 2.5 days using four PIP cycles. In contrast, conventional PIP processes take over 7 days. The in situ flexural strength of the Cf/SiC CMC was 434 MPa at 1750 °C, which was 84% higher than the room temperature value. The value further increased to 542 MPa at 2000 °C. Possible mechanisms to explain the excellent strength of the CMC at elevated temperatures are discussed.

Bonding State and Thermal Expansion Coefficient of Mn-Doped Ba0.5Sr0.5FeO3-δ Perovskite Oxides for IT-SOFCs.

The oxygen vacancy formation behavior and electrochemical and thermal properties of Ba0.5Sr0.5Fe1-xMnxO3-δ (BSFMnx, x = 0-0.15) cathode materials were investigated. For thermogravimetric analysis, the weight decreased from 1.98% (x = 0) to 1.81% (x = 0.15) in the 400-950 °C range, which was due to oxygen loss from the lattice. The average oxidation state of the B-site increased, the Oads/Olat ratio decreased, and the binding energy of the Olat peak increased with Mn doping. These results indicate that Mn doping increases the strength of the metal-oxygen bond and decreases the amount of oxygen vacancies in the lattice. The electrical conductivity of BSFMnx increased with the temperature due to the thermally activated small-polaron hopping mechanism showing a maximum value of 10.4 S cm-1 (x = 0.15) at 450 °C. The area-specific resistance of BSFMn0.15 was 0.14 Ω cm2 at 700 °C and the thermal expansion coefficient (TEC) gradually decreased to 12.7 × 10-6 K-1, which is similar to that of Ce0.8Sm0.2O2 (SDC) (12.2 × 10-6 K-1). Mn doping increased the metal-oxygen bonding energy, which reduced the oxygen reduction reaction activity but improved the electrical conductivity and thermal stability with SDC.

Destabilization and Ion Conductivity of Yttria-Stabilized Zirconia for Solid Oxide Electrolyte by Thermal Aging.

The degradation behavior of yttria-stabilized zirconia by thermal aging was investigated in terms of phase transformation, local atomic structure, and electrical conductivity. The average grain size of 8YSZ was increased from 20.83 µm to 25.81 µm with increasing aging temperature. All 8YSZ samples degraded at different temperatures had a predominantly cubic structure. The (400) peak of 8YSZ deteriorated at 1300 and 1400 °C shifted to a high angle, and the peak of tetragonal was not indexed. For 8YSZ degraded at 1500 °C, the (400) peak shifted to a lower angle, and the peak of tetragonal was identified. Analysis of the local microstructure of aged 8YSZ using extended X-ray absorption fine structure showed that the intensity of the Zr-O peak gradually increased and that the intensity of the peak of cationic Zr decreased as the aging temperature increased. The changes in the peaks indicate that the oxygen vacancies were reduced and Y3+ ions escaped from the lattice, leading to the destabilization of 8YSZ. The activation energies of 8YSZ at 1300 °C and 1400 °C were derived to be 0.86 and 0.87 eV, respectively, and the activation energy of 8YSZ at 1500 °C increased significantly to 0.92 eV. With the thermal deterioration of 8YSZ, the cation (Y3+) escaped from the lattice and the number of oxygen vacancies decreased, resulting in the formation of a tetragonal structure and high activation energy at 1500 °C.

Lattice Distortion, Amorphization and Wear Resistance of Carbon-Doped SUS304 by Laser Ablation.

Lattice distortion and amorphization of carbon-doped SUS304 by variation of the laser output were investigated in terms of phase formation and the bonding state. The laser output was changed by 10% in the range of 60% to 100% after covering the SUS304 with carbon paste. A graphite peak and expanded austenite (S-phase) peak were observed in the carbon-doped SUS304, and Rietveld refinement was performed to identify the lattice distortion. The lattice constant of SUS304 was initially 3.612 Å, but expansion lattice distortion occurred in the carbon-doped SUS304 as a result of the S phase formation and carbon doping, and the lattice constant increased to 3.964 Å (100% laser output). X-ray photoelectron spectroscopy analysis for the bonding state of the carbon-doped SUS304 showed that the sp2/sp3 ratio decreased from 3.21 (70% laser output) to 2.52 (100% laser output). The residual stress in the lattice was accumulated due to carbon doping by high thermal energy, which resulted in the formation of amorphous carbon. The bonding environment was represented by the ID/IG ratio using Raman analysis, and it increased from 0.55 (70% laser output) to 1.68 (100% laser output). During microstructure analysis of the carbon-doped SUS304, disordered structures by amorphization were observed in the carbon-doped SUS304 by the greater than 90% laser output. The amorphous carbon filled the lattice grains or voids to lubricate the surface, which improved the friction coefficient and wear rate from 0.23 and 7.63 mm3(Nm)-110-6 to 0.09 and 1.43 mm3(Nm)-110-6, respectively.

High-Dispersed V2O5-CuOX Nanoparticles on h-BN in NH3-SCR and NH3-SCO Performance.

Typically, to meet emission regulations, the selective catalytic reduction of NOX with NH3 (NH3-SCR) technology cause NH3 emissions owing to high NH3/NOX ratios to meet emission regulations. In this study, V-Cu/BN-Ti was used to remove residual NOX and NH3. Catalysts were evaluated for selective catalytic oxidation of NH3 (NH3-SCO) in the NH3-SCR reaction at 200-300 °C. The addition of vanadium and copper increased the number of Brønsted and Lewis acid sites available for the reaction by increasing the ratio of V5+ and forming Cu+ species, respectively. Furthermore, h-BN was dispersed in the catalyst to improve the content of vanadium and copper species on the surface. NH3 and NOX conversion were 98% and 91% at 260 °C, respectively. Consequently, slipped NH3 (NH3-Slip) emitted only 2% of the injected ammonia. Under SO2 conditions, based on the NH3 oxidation reaction, catalytic deactivation was improved by addition of h-BN. This study suggests that h-BN is a potential catalyst that can help remove residual NOX and meet NH3 emission regulations when placed at the bottom of the SCR catalyst layer in coal-fired power plants.

Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition.

This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga2O3 layer grown using a conventional single-step growth, the double Ga2O3 layers grown using a two-step growth process exhibited excellent thickness uniformity, surface roughness, and crystal quality. In addition, the spatial gradient of carrier concentration in the upper layer of the double layers was significantly affected by the mist flow velocity at the surface, regardless of the dopant concentration distribution of the underlying layer. Furthermore, the electrical properties of the single Ga2O3 layer could be attributed to various scattering mechanisms, whereas the carrier mobility of the double Ga2O3 layers could be attributed to Coulomb scattering owing to the heavily doped condition. It strongly suggests the two-step-grown, lightly-Sn-doped Ga2O3 layer is feasible for high power electronic devices.

Bacteria.guru: Comparative Transcriptomics and Co-Expression Database for Bacterial Pathogens.

While bacteria can be beneficial to our health, their deadly pathogenic potential has been an ever-present concern exacerbated by the emergence of drug-resistant strains. As such, there is a pressing urgency for an enhanced understanding of their gene function and regulation, which could mediate the development of novel antimicrobials. Transcriptomic analyses have been established as insightful and indispensable to the functional characterization of genes and identification of new biological pathways, but in the context of bacterial studies, they remain limited to species-specific datasets. To address this, we integrated the genomic and transcriptomic data of the 17 most notorious and researched bacterial pathogens, creating bacteria.guru, an interactive database that can identify, visualize, and compare gene expression profiles, coexpression networks, functionally enriched clusters, and gene families across species. Through illustrating antibiotic resistance mechanisms in P. aeruginosa, we demonstrate that bacteria.guru could potentially aid in discovering multi-faceted antibiotic targets and, overall, facilitate future bacterial research. AVAILABILITY: The database and coexpression networks are freely available from https://bacteria.guru/. Sample annotations can be found in the supplemental data.

Local Structure and Redox Properties of Amorphous CeO2-TiO2 Prepared Using the H2O2-Modified Sol-Gel Method.

Amorphous CeO2-TiO2 nanoparticles synthesized by the H2O2-modified sol-gel method were investigated in terms of the Ce-O-Ce and Ti-O-Ti linkage, local structure, and redox properties. The decrease in the crystallinity of CeO2-TiO2 by H2O2 addition was confirmed. The metal-oxygen linkage analysis showed the difference in size of the metal-oxygen network between crystalline CeO2-TiO2 and amorphous CeO2-TiO2 due to the O22- formed by H2O2. The local structure of CeO2-TiO2 was analyzed with an extended X-ray absorption fine structure (EXAFS), and the oscillation changes in the k space revealed the disordering of CeO2-TiO2. The decrease in Ce-O bond length and the Ce-O peak broadening was attributed to O22- interfering with the formation of the extended metal-oxygen network. The temperature-programmed reduction of the H2 profile of amorphous CeO2-TiO2 exhibited the disappearance of the bulk oxygen reduction peak and a low-temperature shift of the surface oxygen reduction peak. The H2 consumption increased compared to crystalline CeO2-TiO2, which indicated the improvement of redox properties by amorphization.

Health Surveillance of Penguins in the Barton Peninsula on King George Island, Antarctica.

Samples from 29 adult Gentoo (Pygoscelis papua), Chinstrap (Pygoscelis antarcticus), and Adélie Penguins (Pygoscelis adeliae) at the King Sejong Station on NarÌ¢ ebski Point, King George Island, Antarctica, were investigated to detect antibodies to avian influenza, Newcastle disease virus, infectious bursal disease virus, infectious bronchitis virus, Mycoplasma, and Salmonella. Antibodies were identified from one Gentoo Penguin and one Chinstrap Penguin against infectious bronchitis virus; from one Gentoo Penguin against Newcastle disease virus; from one Gentoo Penguin against Mycoplasma synoviae; and from two Chinstrap Penguins against Salmonella pullorum. Thirty-three dead penguin chicks were collected from the breeding colony for necropsy, histopathological examination, and polymerase chain reaction. Pulmonary hemorrhage and congestion were the main necropsy findings.

Hydrolysis Reaction and Amorphization of Ce-Ti Oxide Catalysts During Synthesis.

The change in the crystallinity of Ce-Ti oxide nanocatalysts with different water contents was investigated in terms of the local atomic structure and the surface atomic concentration. The crystallization of TiO2, which was induced by the hydrolysis of the Ti precursor, was observed in the catalyst synthesized via a liquid phase reaction employing a mixture of ethanol and distilled water as the solvent. The hydrolysis reaction of the Ti precursor was impeded in the solvent mixture of ethanol and anhydrous ethanol. CeO2 nanocrystallization occurred due to the suppression of the TiO2 crystal growth. Low crystallinity of the catalyst synthesized in a single anhydrous ethanol solvent was observed through the broadened X-ray diffraction (XRD) peak and the diffused ring pattern in transmission electron microscopic (TEM) images. In addition, the Ce-O and Ce-Ce bond lengths of the catalyst synthesized using the single solvent decreased beyond those of the catalysts synthesized in the mixed solvent, indicating the amorphization of the catalyst. It was also verified that the inhibition of the precursor crystallization during the synthesis led to the enhanced dispersion of the nanocatalyst, compared to the stoichiometry of the surface atomic concentration.