Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods.

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

Facet-controlled anatase TiO2 nanoparticles through various fluorine sources for superior photocatalytic activity.

Reactive surface-exposed anatase TiO2 (a-TiO2) is highly desirable for applications requiring superior photocatalytic activity. In order to obtain a favorable surface, morphology control of the a-TiO2 using capping agents has been widely investigated. Herein, we systematically study the effects of different F sources (HF, TiF4, and NH4F) as the capping agent on the morphology control and photocatalytic activities of a-TiO2 in a hydrothermal process. When either HF or TiF4 was added, large truncated bipyramids formed with the photocatalytically active {001} facet, whereas the NH4F was not effective for facet control, yielding nanospheres similar to the pure a-TiO2. The morphology changes were related to the decomposition behaviors of the F sources in the solvent material: HF and TiF4 decomposed and supplied F(-) ions before a-TiO2 nucleation, which changed the nucleation rate and growth direction, leading to the resultant a-TiO2 morphology. On the other hand, NH4F supplied F(-) ions after a-TiO2 nucleation and could not change the growth behavior. In terms of the photocatalytic effect, the HF- and TiF4-treated a-TiO2 effectively decomposed ∼90% and ∼80% of methylene blue, respectively, in 1 h, while ∼60% was decomposed for the NH4F-treated a-TiO2. Note that pure a-TiO2 photocatalytically decomposed only ∼10% of methylene blue over the same time. These results pave the way to precise control of the facet of TiO2 through using different capping agents.

Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes.

The incorporation of doping elements in ZnO nanostructures plays an important role in adjusting the optical and electrical properties in optoelectronic devices. In the present study, we fabricated 1-D ZnO nanorods (NRs) doped with different In contents (0% ~ 5%) on p-GaN films using a facile hydrothermal method, and investigated the effect of the In doping on the morphology and electronic structure of the NRs and the electrical and optical performances of the n-ZnO NRs/p-GaN heterojunction light emitting diodes (LEDs). As the In content increased, the size (diameter and length) of the NRs increased, and the electrical performance of the LEDs improved. From the electroluminescence (EL) spectra, it was found that the broad green-yellow-orange emission band significantly increased with increasing In content due to the increased defect states (oxygen vacancies) in the ZnO NRs, and consequently, the superposition of the emission bands centered at 415 nm and 570 nm led to the generation of white-light. These results suggest that In doping is an effective way to tailor the morphology and the optical, electronic, and electrical properties of ZnO NRs, as well as the EL emission property of heterojunction LEDs.

Surface-Tunable Bioluminescence Resonance Energy Transfer via Geometry-Controlled ZnO Nanorod Coordination.

The use of ZnO nanorods (NRs) as an effective coordinator and biosensing platform to create bioluminescence resonance energy transfer (BRET) is reported. Herein, a hydrothermal approach is applied to obtain morphologically controlled ZnO NRs, which are directly bound to luciferase (Luc) and carboxy-modified quantum dot (QD) acting as a donor-acceptor pair for BRET. BRET efficiency varies significantly with the geometry of ZnO NRs, which modulates the coordination between hexahistidine-tagged Luc (Luc-His6 ) and QD, owing to the combined effect of the total surface area consisting of (001) and (100) planes and their surface polarities. Unlike typical QD-BRET reactions with metal ions (e.g., zinc ions), a geometry-controlled ZnO NR platform can facilitate the design of surface-initiated BRET sensors without being supplemented by copious metal ions: the geometry-controlled ZnO NR platform can therefore pave the way for nanostructure-based biosensors with enhanced analytical performance.

Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.

We fabricated InSnZnO (ITZO) thin-film transistors (TFTs) with a high-permittivity (K) ZrO2 gate insulator using a solution process and explored the microstructure and electrical properties. ZrO2 and ITZO (In:Sn:Zn = 2:1:1) precursor solutions were deposited using consecutive spin-coating and drying steps on highly doped p-type Si substrate, followed by annealing at 700 degrees C in ambient air. The ITZO/ZrO2 TFT device showed n-channel depletion mode characteristics, and it possessed a high saturation mobility of approximately 9.8 cm2/V x s, a small subthreshold voltage swing of approximately 2.3 V/decade, and a negative V(TH) of approximately 1.5 V, but a relatively low on/off current ratio of approximately 10(-3). These results were thought to be due to the use of the high-kappa crystallized ZrO2 dielectric (kappa approximately 21.8) as the gate insulator, which could permit low-voltage operation of the solution-processed ITZO TFT devices for applications to high-throughput, low-cost, flexible and transparent electronics.

Microstructure and dielectric characteristics of high-k tetragonal ZrO2 films with various thicknesses processed by sol-gel method.

High-k ZrO2/Si films were fabricated by a sol-gel method and the effects of the thickness of ZrO2 on the phase formation, interface chemical structure, and dielectric performance were studied. The 0.1 M precursor sol was prepared by using Zr acetylacetonate, coated, dried on Si substrates, and finally annealed at 500 degrees C. The thickness of ZrO2 was varied in the range from 7 to 51 nm by repeating the coating and drying sequences. The deposited ZrO2 was amorphous for the sample with a thickness of -7 nm, but tetragonal (t-) phases appeared as the thickness increased. As the thickness increased, the flat-band voltage and hysteresis width in the capacitance-voltage curves increased. The sol-gel deposited ZrO2 dielectrics showed a high k value (-33) due to the formation of the t-phase, while retaining gate leakage current levels of less than -4.0 x 10(-5) A/cm2 at 1 MV/cm.

Enhancement in the critical current density of C-doped MgB2 wire using a polyacrylic acid dopant.

C-doped MgB2 wires were fabricated from a polyacrylic acid (PAA) using a conventional in-situ PIT technique. The effects of the PAA content on the lattice parameter, microstructure, critical temperature (Tc) and critical current density (Jc) were examined. With increasing PAA content, the amount of MgO in the sample increased but the crystallinity, a-axis lattice parameter, and Tc of MgB2 wires decreased, indicating that the C that decomposed from PAA during heat treatment had substituted for B. All doped samples exhibited a higher Jc than the undoped sample at high magnetic field, and the Jc(B) property improved with increasing PAA content: for the 7 wt% doped sample, the Jc was approximately 3-times higher than that of the pristine sample (1.28 kA/cm2 vs. 3.43 kA/cm2) at 5 K and 6.6 T. The improved Jc(B) of the doped sample was attributed to the decreased grain size, enlarged lattice distortion and increased C doping level.