Quantum Transport in InSb Quantum Well Devices: Progress and Perspective.

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron effective mass, high electron mobility, large effective $g$-factor, and strong spin-orbit interactions. These unique properties make InSb interesting for both industrial applications and quantum information processing. In this paper, we provide a review of recent progress in quantum transport research on InSb quantum well devices. With advancements in the growth of high-quality heterostructures and micro/nano fabrication, quantum transport experiments have been conducted on low-dimensional systems based on InSb quantum wells. Furthermore, ambipolar operations have been achieved in undoped InSb quantum wells, allowing for a systematic study of the band structure and quantum properties of p-type narrow-band semiconductors. Additionally, we introduce the latest research on InAsSb quantum wells as a continuation of exploring physics in semiconductors with even narrower bandgaps.

An ultrastrongly coupled single terahertz meta-atom.

Free-space coupling to subwavelength individual optical elements is a central theme in quantum optics, as it allows the control over individual quantum systems. Here we show that, by combining an asymmetric immersion lens setup and a complementary resonating metasurface we are able to perform terahertz time-domain spectroscopy of an individual, strongly subwavelength meta-atom. We unravel the linewidth dependence as a function of the meta-atom number indicating quenching of the superradiant coupling. On these grounds, we investigate ultrastrongly coupled Landau polaritons at the single resonator level, measuring a normalized coupling ratio [Formula: see text]. Similar measurements on a lower density two dimensional electron gas yield a coupling ratio [Formula: see text] with a cooperativity C = 94. Our findings pave the way towards the control of ultrastrong light-matter interaction at the single electron/ resonator level. The proposed technique is way more general and can be useful to characterize the complex conductivity of micron-sized samples in the terahertz domain.