One-Dimensional Crystal-Structure Te-Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging.

Flexible shortwave infrared detectors play a crucial role in wearable devices, bioimaging, automatic control, etc. Commercial shortwave infrared detectors face challenges in achieving flexibility due to the high fabrication temperature and rigid material properties. Herein, we develop a high-performance flexible Te0.7Se0.3 photodetector, resulting from the unique 1D crystal structure and small elastic modulus of Te-Se alloying. The flexible photodetector exhibits a broad-spectrum response ranging from 365 to 1650 nm, a fast response time of 6 µs, a broad linear dynamic range of 76 dB, and a specific detectivity of 4.8 × 1010 Jones at room temperature. The responsivity of the flexible detector remains at 93% of its initial value after bending with a small curvature of 3 mm. Based on the optimized flexible detector, we demonstrate its application in shortwave infrared imaging. These results showcase the great potential of Te0.7Se0.3 photodetectors for flexible electronics.

(Bi,Sb)2 Se3 Alloy Thin Film for Short-Wavelength Infrared Photodetector and TFT Monolithic-Integrated Matrix Imaging.

Short-wavelength infrared photodetectors play a significant role in various fields such as autonomous driving, military security, and biological medicine. However, state-of-the-art short-wavelength infrared photodetectors, such as InGaAs, require high-temperature fabrication and heterogenous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits (ROIC), resulting in a high cost and low imaging resolution. Herein, for the first time, a low-cost, high-performance, high-stable, and thin-film transistor (TFT) ROIC monolithic-integrated (Bi,Sb)2 Se3 alloy thin-film short-wavelength infrared photodetector is reported. The (Bi,Sb)2 Se3 alloy thin-film short-wavelength infrared photodetectors demonstrate a high external quantum efficiency (EQE) of 21.1% (light intensity of 0.76 µW cm-2 ) and a fast response time (3.24 µs). The highest EQE is about two magnitudes than that of the extrinsic photoconduction of Sb2 Se3 (0.051%). In addition, the unpackaged devices demonstrate high electric and thermal stability (almost no attenuation at 120 °C for 312 h), showing potential for in-vehicle applications that may experient such a high temperature. Finally, both the (Bi,Sb)2 Se3 alloy thin film and n-type CdSe buffer layer are directly deposited on the TFT ROIC (with a 64 × 64-pixel array) with a low-temperature process and the material identification and imaging applications are presented. This work is a significant breakthrough in ROIC monolithic-integrated short-wavelength infrared imaging chips.

Mobile energy storage technologies for boosting carbon neutrality.

Carbon neutrality calls for renewable energies, and the efficient use of renewable energies requires energy storage mediums that enable the storage of excess energy and reuse after spatiotemporal reallocation. Compared with traditional energy storage technologies, mobile energy storage technologies have the merits of low cost and high energy conversion efficiency, can be flexibly located, and cover a large range from miniature to large systems and from high energy density to high power density, although most of them still face challenges or technical bottlenecks. In this review, we provide an overview of the opportunities and challenges of these emerging energy storage technologies (including rechargeable batteries, fuel cells, and electrochemical and dielectric capacitors). Innovative materials, strategies, and technologies are highlighted. Finally, the future directions are envisioned. We hope this review will advance the development of mobile energy storage technologies and boost carbon neutrality.

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics.

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.

Molecular Ferroelectric Crystals with Superior Pyroelectricity, Plasticity, and Recyclability.

The pyroelectric effect is used in a wide range of applications such as infrared (IR) detection and thermal energy harvesting, which require the pyroelectric materials to simultaneously have a high pyroelectric coefficient and a low dielectric constant for high figures of merit. However, in conventional proper ferroelectrics, the positive correlation between the pyroelectric coefficient and the dielectric constant imposes an insurmountable challenge in upgrading the figures of merit. Here, we explored superior pyroelectricity in [(CH3)4N][FeCl4] (TMA-FC) and [(CH3)4N][FeCl3Br] (TMA-FCB) molecular ferroelectric plastic crystals, which could decouple this positive correlation due to the nature of improper polarization behavior. Therefore, TMA-FC and TMA-FCB derive a high pyroelectric coefficient and a low dielectric constant simultaneously, yielding record-high figures of merit around room temperature. Furthermore, the favorable plasticity enables ferroelectric crystals to attach surfaces with different shapes for device design and integration. More interestingly, the molecular ferroelectrics could be softened and reshaped at elevated temperatures without decay in pyroelectricity, making them recyclable for cost savings and e-waste reduction. Combined with the facile fabrication process, the findings of this work would open avenues for employing molecular ferroelectric plastic crystals in the manufacture of high-performance pyroelectric devices.

Polyvinyl alcohol/polyacrylamide double-network hydrogel-based semi-dry electrodes for robust electroencephalography recording at hairy scalp for noninvasive brain-computer interfaces.

Objective.Reliable and user-friendly electrodes can continuously and real-time capture the electroencephalography (EEG) signals, which is essential for real-life brain-computer interfaces (BCIs). This study develops a flexible, durable, and low-contact-impedance polyvinyl alcohol/polyacrylamide double-network hydrogel (PVA/PAM DNH)-based semi-dry electrode for robust EEG recording at hairy scalp.Approach.The PVA/PAM DNHs are developed using a cyclic freeze-thaw strategy and used as a saline reservoir for semi-dry electrodes. The PVA/PAM DNHs steadily deliver trace amounts of saline onto the scalp, enabling low and stable electrode-scalp impedance. The hydrogel also conforms well to the wet scalp, stabilizing the electrode-scalp interface. The feasibility of the real-life BCIs is validated by conducting four classic BCI paradigms on 16 participants.Main results.The results show that the PVA/PAM DNHs with 7.5 wt% PVA achieve a satisfactory trade-off between the saline load-unloading capacity and the compressive strength. The proposed semi-dry electrode exhibits a low contact impedance (18 ± 8.9 kΩ at 10 Hz), a small offset potential (0.46 mV), and negligible potential drift (1.5 ± 0.4µV min-1). The temporal cross-correlation between the semi-dry and wet electrodes is 0.91, and the spectral coherence is higher than 0.90 at frequencies below 45 Hz. Furthermore, no significant differences are present in BCI classification accuracy between these two typical electrodes.Significance.Based on the durability, rapid setup, wear-comfort, and robust signals of the developed hydrogel, PVA/PAM DNH-based semi-dry electrodes are a promising alternative to wet electrodes in real-life BCIs.

Substantially Enhanced Electrocaloric Effect in Ba(Zr0.2Ti0.8)O3 Lead-Free Ferroelectric Ceramics via Lattice Stress Engineering.

As an alternative to conventional vapor-compression refrigeration, cooling devices based on electrocaloric (EC) materials are environmentally friendly and highly efficient, which are promising in realizing solid-state cooling. Lead-free ferroelectric ceramics with competitive EC performance are urgently desirable for EC cooling devices. In the past few decades, constructing phase coexistence and high polarizability have been two crucial factors in optimizing the EC performance. Different from the external stress generated through heavy equipment and inner interface stress caused by complex interface structures, the internal lattice stress induced by ion substitution engineering is a relatively simple and efficient means to tune the phase structure and polarizability. In this work, we introduce low-radius Li+ into BaZr0.2Ti0.8O3 (BZT) to form a particular A-site substituted cell structure, leading to a change of the internal lattice stress. With the increase of lattice stress, the fraction of the rhombohedral phase in the rhombohedral-cubic (R-C) coexisting system and ferroelectricity are all pronouncedly enhanced for the Li2CO3-doped sample, resulting in the significant enhancement of saturated polarization (Ps) as well as EC performance [e.g., adiabatic temperature change (ΔT) and isothermal entropy change (ΔS)]. Under the same conditions (i.e., 333 K and 70 kV cm-1), the ΔT of 5.7 mol % Li2CO3-doped BZT is 1.37 K, which is larger than that of the pure BZT ceramics (0.61 K). Consequently, in cooperation with the great improvement of electric field breakdown strength (Eb) from 70 to 150 kV cm-1, 5.7 mol % Li2CO3-doped BZT achieved a large ΔT of 2.26 K at a temperature of 333 K, which is a competitive performance in the field of electrocaloric effect (ECE). This work provides a simple but effective approach to designing high-performance electrocaloric materials for next-generation refrigeration.

Tex Se1-x Photodiode Shortwave Infrared Detection and Imaging.

Short-wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short-wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low-cost, high-performance, and high-stability Tex Se1- x short-wave infrared photodiode detector is reported. The Tex Se1- x thin film is fabricated through CMOS-compatible low-temperature evaporation and post-annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad-spectrum response of 300-1600 nm, a room-temperature specific detectivity of 1.0 × 1010 Jones, a -3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te-based photodiode devices and a dark current density 7 orders of magnitude smaller than Te-based photoconductive and field-effect transistor devices. With a simple Si3 N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Tex Se1- x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS-compatible infrared imaging chips.

Improved Carrier Lifetimes of CdSe Thin Film via Te Doping for Photovoltaic Application.

Cadmium selenide (CdSe) solar cells have proven to be a remarkable potential top cell for a silicon-based tandem application. However, the defects and short carrier lifetimes of CdSe thin films greatly limit the solar cell performance. In this work, a Te-doped strategy is proposed to passivate the Se vacancy defects and increase the carrier lifetime of the CdSe thin film. The theoretical calculation helps to reveal the mechanism of nonradiative recombination of the CdSe thin film in depth. After Te-doping, the calculated capture coefficient of CdSe can be reduced from 4.61 × 10-8 cm3 s-1 to 2.32 × 10-9 cm3 s-1. Meanwhile, the carrier lifetime of CdSe thin film is increased nearly 3-fold from 0.53 to 1.43 ns. Finally, the efficiency of the Cd(Se,Te) solar cell is improved to 4.11%, about a relative 36.5% improvement compared to the pure CdSe solar cell. Both theoretical calculations and experiments prove that Te can effectively passivate bulk defects and improve the carrier lifetime of CdSe thin films, deserving further exploration to improve solar cell performance.

Frizzled-7-targeting antibody (SHH002-hu1) potently suppresses non-small-cell lung cancer via Wnt/ß-catenin signaling.

Non-small-cell lung cancer (NSCLC) is one of the deadliest cancers worldwide, and metastasis is considered one of the leading causes of treatment failure in NSCLC. Wnt/ß-catenin signaling is crucially involved in epithelial-mesenchymal transition (EMT), a crucial factor in promoting metastasis, and also contributes to resistance developed by NSCLC to targeted agents. Frizzled-7 (Fzd7), a critical receptor of Wnt/ß-catenin signaling, is aberrantly expressed in NSCLC and has been confirmed to be positively correlated with poor clinical outcomes. SHH002-hu1, a humanized antibody targeting Fzd7, was previously successfully generated by our group. Here, we studied the anti-tumor effects of SHH002-hu1 against NSCLC and revealed the underlying mechanism. First, immunofluorescence (IF) and near-infrared (NIR) imaging assays showed that SHH002-hu1 specifically binds Fzd7+ NSCLC cells and targets NSCLC tissues. Wound healing and transwell invasion assays indicated that SHH002-hu1 significantly inhibits the migration and invasion of NSCLC cells. Subsequently, TOP-FLASH/FOP-FLASH luciferase reporter, IF, and western blot assays validated that SHH002-hu1 effectively suppresses the activation of Wnt/ß-catenin signaling, and further attenuates the EMT of NSCLC cells. Finally, the subcutaneous xenotransplanted tumor model of A549/H1975, as well as the popliteal lymph node (LN) metastasis model, was established, and SHH002-hu1 was demonstrated to inhibit the growth of NSCLC xenografts and suppress LN metastasis of NSCLC. Above all, SHH002-hu1 with selectivity toward Fzd7+ NSCLC and the potential of inhibiting invasion and metastasis of NSCLC via disrupting Wnt/ß-catenin signaling, is indicated as a good candidate for the targeted therapy of NSCLC.

Engineering Atomic-to-Nano Scale Structural Homogeneity towards High Corrosion Resistance of Amorphous Magnesium-Based Alloys.

Magnesium-based amorphous alloys have aroused broad interest in being applied in marine use due to their merits of lightweight and high strength. Yet, the poor corrosion resistance to chloride-containing seawater has hindered their practical applications. Herein, we propose a new strategy to improve the chloride corrosion resistance of amorphous Mg65Cu15Ag10Gd10 alloys by engineering atomic-to-nano scale structural homogeneity, which is implemented by heating the material to the critical temperature of the liquid-liquid transition. By using various electrochemical, microscopic, and spectroscopic characterization methods, we reveal that the liquid-liquid transition can rearrange the local structural units in the amorphous structure, slightly decreasing the alloy structure's homogeneity, accelerate the formation of protective passivation film, and, therefore, increase the corrosion resistance. Our study has demonstrated the strong coupling between an amorphous structure and corrosion behavior, which is available for optimizing corrosion-resistant alloys.

An Efficient Voltammetric Sensor Based on Graphene Oxide-Decorated Binary Transition Metal Oxides Bi2O3/MnO2 for Trace Determination of Lead Ions.

Herein we present a facile synthesis of the graphene oxide-decorated binary transition metal oxides of Bi2O3 and MnO2 nanocomposites (Bi2O3/MnO2/GO) and their applications in the voltammetric detection of lead ions (Pb2+) in water samples. The surface morphologies, crystal structures, electroactive surface area, and charge transferred resistance of the Bi2O3/MnO2/GO nanocomposites were investigated through the scanning electron microscopy (SEM), power X-ray diffraction (XRD), cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS) techniques, respectively. The Bi2O3/MnO2/GO nanocomposites were further decorated onto the surface of a glassy carbon electrode (GCE), and Pb2+ was quantitatively analyzed by using square-wave anodic stripping voltammetry (SWASV). We explored the effect of the analytical parameters, including deposition potential, deposition time, and solution pH, on the stripping peak current of Pb2+. The Bi2O3/MnO2/GO nanocomposites enlarged the electroactive surface area and reduced the charge transferred resistance by significant amounts. Moreover, the synergistic enhancement effect of MnO2, Bi2O3 and GO endowed Bi2O3/MnO2/GO/GCE with extraordinary electrocatalytic activity toward Pb2+ stripping. Under optimal conditions, the Bi2O3/MnO2/GO/GCE showed a broad linear detection range (0.01-10 µM) toward Pb2+ detection, with a low limit of detection (LOD, 2.0 nM). The proposed Bi2O3/MnO2/GO/GCE electrode achieved an accurate detection of Pb2+ in water with good recoveries (95.5-105%).

Cation-Exchange Enables In Situ Preparation of PbSe Quantum Dot Ink for High Performance Solar Cells.

Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for optoelectronic applications. To date, PbSe CQDs capped by halide ligands exhibit improved stability and solar cells using these CQDs as active layers have reported a remarkable power conversion efficiency (PCE) up to 10%. However, PbSe CQDs are more prone to oxidation, requiring delicate control over their processability and compromising their applications. Herein, an efficient strategy that addresses this issue by an in situ cation-exchange process is reported. This is achieved by a two-phase ligand exchange process where PbI2 serves as both a passivating ligand and cation-source inducing transformation of CdSe to PbSe. The defect density and carrier lifetime of PbSe CQD films are improved to 1.05 × 1016  cm-3 and 12.2 ns, whereas the traditional PbSe CQD films possess 1.9 × 1016  cm-3 defect density and 10.2 ns carrier lifetime. These improvements are translated into an enhancement of photovoltaic performance of PbSe solar cells, with a PCE of up to 11.6%, ≈10% higher than the previous record. Notably, the approach enables greatly improved stability and a two-month stability is successfully demonstrated. This strategy is expected to promote the fast development of PbSe CQD applications in low-cost and high-performance optoelectronic devices.

Stable Indium Tin Oxide with High Mobility.

Indium tin oxide (ITO) is widely used in a variety of optoelectronic devices, occupying a huge market share of $1.7 billion. However, traditional preparation methods such as magnetron sputtering limit the further development of ITO in terms of high preparation temperature (>350 °C) and low mobility (∼30 cm2 V-1 s-1). Herein, we develop an adjustable process to obtain high-mobility ITO with both appropriate conductivity and infrared transparency at room temperature by a reactive plasma deposition (RPD) system, which has many significant advantages including low-ion damage, low deposition temperature, large-area deposition, and high throughput. By optimizing the oxygen flow during the RPD process, ITO films with a high mobility of 62.1 cm2 V-1 s-1 and a high average transparency of 89.7% at 800-2500 nm are achieved. Furthermore, the deposited ITO films present a smooth surface with a small roughness of 0.3 nm. The stability of ITO films to heat, humidity, radiation, and alkali environments is also investigated with carrier mobility average changes of 19.3, 4.4, and 4.7%, showcasing strong environmental adaptability. We believe that stable ITO films with high mobility prepared by a low-damage deposition method will be widely used in full spectral optoelectronic applications, such as tandem solar cells, infrared photodetectors, light-emitting diodes, etc.

Rapid thermal annealing process for Se thin-film solar cells.

Recently, selenium (Se) has regained interest as a possible wide-bandgap photovoltaic material for silicon-based tandem applications. However, the easy sublimation of Se below the melting point (220 °C) brings challenges for high-quality Se thin films. Herein, we design a rapid thermal annealing (RTA) method to balance the contradiction between the sublimation and crystallization of Se thin films. Through optimizing the annealing temperature, a high-quality Se thin film is obtained with a large grain size (∼1 µm) and preferred [003] orientation during the RTA process. Then, an optimized efficiency of 3.22% is achieved in a ZnO/Se heterojunction solar cell. This study provides a new guide to obtain high-quality Se thin film by RTA and the method can be extended to other materials with high saturated vapor pressure.

Coupled Electronic and Anharmonic Structural Dynamics for Carrier Self-Trapping in Photovoltaic Antimony Chalcogenides.

V-VI antimony chalcogenide semiconductors have shown exciting potentials for thin film photovoltaic applications. However, their solar cell efficiencies are strongly hampered by anomalously large voltage loss (>0.6 V), whose origin remains controversial so far. Herein, by combining ultrafast pump-probe spectroscopy and density functional theory (DFT) calculation, the coupled electronic and structural dynamics leading to excited state self-trapping in antimony chalcogenides with atomic level characterizations is reported. The electronic dynamics in Sb2 Se3 indicates a ≈20 ps barrierless intrinsic self-trapping, with electron localization and accompanied lattice distortion given by DFT calculations. Furthermore, impulsive vibrational coherences unveil key SbSe vibrational modes and their real-time interplay that drive initial excited state relaxation and energy dissipation toward stabilized small polaron through electron-phonon and subsequent phonon-phonon coupling. This study's findings provide conclusive evidence of carrier self-trapping arising from intrinsic lattice anharmonicity and polaronic effect in antimony chalcogenides and a new understanding on the coupled electronic and structural dynamics for redefining excited state properties in soft semiconductor materials.

Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction.

Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.

Fabrication and characterization of ZnO/Se1-xTex solar cells.

Selenium (Se) element is a promising light-harvesting material for solar cells because of the large absorption coefficient and prominent photoconductivity. However, the efficiency of Se solar cells has been stagnated for a long time owing to the suboptimal bandgap (> 1.8 eV) and the lack of a proper electron transport layer. In this work, we tune the bandgap of the absorber to the optimal value of Shockley-Queisser limit (1.36 eV) by alloying 30% Te with 70% Se. Simultaneously, ZnO electron transport layer is selected because of the proper band alignment, and the mild reaction at ZnO/Se0.7Te0.3 interface guarantees a good-quality heterojunction. Finally, a superior efficiency of 1.85% is achieved on ZnO/Se0.7Te0.3 solar cells.

Critical Review of Synthesis, Toxicology and Detection of Acyclovir.

Acyclovir (ACV) is an effective and selective antiviral drug, and the study of its toxicology and the use of appropriate detection techniques to control its toxicity at safe levels are extremely important for medicine efforts and human health. This review discusses the mechanism driving ACV's ability to inhibit viral coding, starting from its development and pharmacology. A comprehensive summary of the existing preparation methods and synthetic materials, such as 5-aminoimidazole-4-carboxamide, guanine and its derivatives, and other purine derivatives, is presented to elucidate the preparation of ACV in detail. In addition, it presents valuable analytical procedures for the toxicological studies of ACV, which are essential for human use and dosing. Analytical methods, including spectrophotometry, high performance liquid chromatography (HPLC), liquid chromatography/tandem mass spectrometry (LC-MS/MS), electrochemical sensors, molecularly imprinted polymers (MIPs), and flow injection-chemiluminescence (FI-CL) are also highlighted. A brief description of the characteristics of each of these methods is also presented. Finally, insight is provided for the development of ACV to drive further innovation of ACV in pharmaceutical applications. This review provides a comprehensive summary of the past life and future challenges of ACV.

HTL-Free Sb2(S, Se)3 Solar Cells with an Optimal Detailed Balance Band Gap.

Antimony chalcogenides are widely studied as a light-absorbing material due to their merits of low toxicity, efficient cost, and excellent photovoltaic properties. However, the band gaps of antimony selenide (approximately 1.1 eV) and antimony sulfide (approximately 1.7 eV) both deviate from the optimal detailed balance band gap (∼1.3 eV) for terrestrial single-junction solar cells. Notably, the band gap of Sb2(S, Se)3 can be tunable in the range from 1.1 to 1.7 eV, which can cover the detailed balance band gap. In this work, the vapor transport deposition method with two independent evaporation sources is used to deposit Sb2(S, Se)3 thin films. By carefully optimizing the evaporation temperature and the start evaporation time of the Sb2Se3 and Sb2S3 sources, a suitable band gap of 1.33 eV is obtained. Finally, on the basis of the optimal Sb2(S, Se)3 films, Sb2(S, Se)3 solar cells without a hole transport layer achieved an efficiency of 7.03%.