ABSTRACT
Herein, we systematically studied the effect of various excitation processes on the structural, optical, and magnetic properties of ZnO films implanted with 80 keV Ar+, 110 keV Mn+, and 190 keV Ag+ ions. Four different doses of 1 × 1013, 1 × 1014, 1 × 1015, and 2 × 1016 ions per cm2 were used for implantation. It was observed that the structural, optical, and magnetic properties of the implanted samples were dominantly affected at the highest dose of 2 × 1016 ions per cm2. For lower doses, insignificant changes in these properties were observed. A comparison of various processes involved in the implantation process shows that both the electronic excitation and nuclear excitation processes are responsible for the changes in the structural, optical, and magnetic properties of the implanted ZnO films.
ABSTRACT
Herein, sputtering duration and annealing temperature effects on the structure and local electronic structure of MgO thin films were studied using synchrotron radiation based X-ray diffraction and X-ray absorption spectroscopic investigations. These films were grown at substrate temperature of 350 °C by varying sputtering duration from 25 min to 324 min in radio frequency (RF) sputtering method followed by post-deposition annealing at 400, 600 and 700 °C for 3 h. These films were amorphous upto certain sputtering durations, typically upto 144 min and attains crystallization thereafter. This kind of behavior was observed at all annealing temperature. The textured coefficient of crystalline films envisaged that the orientation was affected by annealing temperature. Coordination of Mg2+ ions was more distorted in amorphous films compared to crystalline films. Moreover, onset of molecular oxygen are absorbed at low annealing temperature on these films.
ABSTRACT
Herein, the size dependent behavior of cobalt ferrite nanoparticles was investigated using synchrotron radiation based techniques. Scanning electron micrographs revealed the enhancement of particle/crystallite size with increase of annealing temperature. Moreover, the shape of these particles also changed with increase of crystallite size. Saturation magnetization increased with increase of crystallite size. The higher saturation magnetization for larger crystallite size nanoparticles was attributed to a cation distribution similar to that of bulk CoFe2O4. The optical band-gap of these nanoparticles decreased from 1.9 eV to 1.7 eV with increase of crystallite size. The enhancement of the optical band-gap for smaller crystallites was due to phenomena of optical confinement occurring in the nanoparticles. Fe L Co L-edge near edge extended X-ray absorption fine structure (NEXAFS) measurements showed that Fe and Co ions remain in the 3+ and 2+ state in these nanoparticles. The results obtained from Fe & Co K-edge X-ray absorption near edge structure (XANES)-imaging experiments further revealed that this oxidation state was possessed by even the crystallites. Extended X-ray absorption fine structure (EXAFS) measurements revealed distribution of Fe and Co ions among tetrahedral (A) and octahedral (B) sites of the spinel structure which corroborates the results obtained from Rietveld refinement of X-ray diffraction patterns (XRD). X-ray magnetic circular di-chroism (XMCD) measurements revealed negative exchange interaction among the ions situated in tetrahedral (A) and octahedral (B) sites. Theoretical and experimental calculated magnetic moments revealed the dominancy of size effects rather than the cation redistribution in the spinel lattice of CoFe2O4 nanoparticles.
ABSTRACT
Zinc ferrite thin films were deposited using a radio-frequency-sputtering method on glass substrates. As-deposited films were annealed at 200°C for 1, 3 and 5 h, respectively. X-ray diffraction studies revealed the amorphous nature of as-grown and annealed films. Thickness of as-deposited film is 96 nm as determined from Rutherford backscattering spectroscopy which remains almost invariant with annealing. Transmission electron microscopic investigations envisaged a low degree of crystalline order in as-deposited and annealed films. Thicknesses estimated from these measurements were almost 62 nm. Roughness values of these films were almost 1-2 nm as determined from atomic force microscopy. X-ray reflectivity measurements further support the results obtained from TEM and AFM. Near-edge X-ray absorption fine structure measurements envisaged 3+ and 2+ valence states of Fe and Zn ions in these films. UV-Vis spectra of these films were characterized by a sharp absorption in the UV region. All films exhibited almost the same value of optical band gap within experimental error, which is close to 2.86 eV.
ABSTRACT
Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.e., the low-temperature synthesis of wafer-scale, continuous, and orientation-controlled 2D metal dichalcogenides, still remains a significant challenge. Here, we report the low-temperature (≤350 °C) synthesis of uniform and continuous n-type SnS2 thin films via the combination of atomic layer deposition (ALD) of tin oxides and subsequent sulfurization. Well-crystallized and aligned SnS2 layers parallel to the substrate are demonstrated through the phase engineering of the ALD-grown tin oxide and the substrate surface. The additional H2S plasma treatment at 300 °C leads to the formation of stoichiometric SnS2. The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture. The present results could be a step toward the realization of 2D metal dichalcogenides in industry.